vs-mbr4045wtpbf, VS-MBR4045WT-N3 www.vishay.com vishay semiconductors revision: 30-aug-11 1 document number: 94295 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 schottky rectifier, 2 x 20 a features ? 150 c t j operation ? very low forward voltage drop ? high frequency operation ? high purity, high temperature epoxy encapsulation for enhanced mechanical strength and mois ture resistance ? guard ring for enhanc ed ruggedness and long term reliability ? compliant to rohs directive 2002/95/ec ? designed and qualified according to jedec-jesd47 ? halogen-free according to iec 61249-2-21 definition (-n3 only) description the vs-mbr4045wt... center tap schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. the propriet ary barrier technology allows for reliable operation up to 150 c junction temperature. typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. product summary package to-247ac i f(av) 2 x 20 a v r 45 v v f at i f 0.56 v i rm max. 85 ma at 125 c t j max. 150 c diode variation common cathode e as 20 mj base common cathode common cathode 2 2 13 anode 1 anode 2 to-247ac major ratings and characteristics symbol characteristics values units i f(av) rectangular waveform (per device) 40 a i frm t c = 125 c (per leg) 40 v rrm 45 v i fsm t p = 5 s sine 1020 a v f 20 apk, t j = 125 c 0.56 v t j range - 55 to 150 c voltage ratings parameter symbol vs-mbr4045wtpbf VS-MBR4045WT-N3 units maximum dc reverse voltage v r 45 45 v maximum working peak reverse voltage v rwm absolute maximum ratings parameter symbol test conditions values units maximum average forward current per leg i f(av) t c = 125 c, 50 % duty cycle, rectangula r waveform 20 a per device 40 peak repetitive forward current per leg i frm rated v r , square wave, 20 khz, t c = 125 c 40 maximum peak one cycle non-repetitive surge current per leg see fig. 7 i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 1020 10 ms sine or 6 ms rect. pulse 265 non-repetitive avalanche energy per leg e as t j = 25 c, i as = 3 a, l = 4.40 mh 20 mj repetitive avalanche current per leg i ar current decaying linear ly to zero in 1 s frequency limited by t j maximum v a = 1.5 x v r typical 3a
vs-mbr4045wtpbf, VS-MBR4045WT-N3 www.vishay.com vishay semiconductors revision: 30-aug-11 2 document number: 94295 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse width < 300 s, duty cycle < 2 % electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm (1) 20 a t j = 25 c 0.59 v 40 a 0.78 20 a t j = 125 c 0.56 40 a 0.72 maximum instantaneous reverse current i rm (1) t j = 25 c rated dc voltage 1.75 ma t j = 100 c 50 t j = 125 c 85 threshold voltage v f(to) t j = t j maximum 0.29 v forward slope resistance r t 10.3 m ? maximum junction capacitance c t v r = 5 v dc (test signal range 100 khz to 1 mhz) 25 c 900 pf typical series inductance l s measured from top of terminal to mounting plane 7.5 nh maximum voltage rate of change dv/dt rated v r 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction temperature range t j - 55 to 150 c maximum storage temperature range t stg - 55 to 175 maximum thermal resistance, junction to case per package r thjc dc operation 1.4 c/w typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.7 approximate weight 6g 0.21 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) device marking case style to-247ac (jedec) mbr4045wt
vs-mbr4045wtpbf, VS-MBR4045WT-N3 www.vishay.com vishay semiconductors revision: 30-aug-11 3 document number: 94295 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop characteristic s fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 100 10 1000 i f - instantaneous forward current (a) v fm - forward voltage drop (v) 0.4 0. 8 1.2 1.6 2.0 0 t j = 150 c t j = 125 c t j = 25 c 0.001 1 10 100 0.1 0.01 1000 i r - reverse current (ma) v r - reverse voltage (v) 10 20 40 50 30 0 t j = 150 c t j = 125 c t j = 100 c t j = 75 c t j = 50 c t j = 25 c 100 1000 c t - junction capacitance (pf) v r - reverse voltage (v) 10 20 30 50 40 0 t j = 25 c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 100 10 single p u lse (thermal resistance) d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20 p dm t 1 t 2 n otes: 1. d u ty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c
vs-mbr4045wtpbf, VS-MBR4045WT-N3 www.vishay.com vishay semiconductors revision: 30-aug-11 4 document number: 94295 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward powe r loss characteristics fig. 7 - maximum non-re petitive surge current fig. 8 - unclamped inductive test circuit note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r 8 0 100 120 140 160 allowable case temperature (c) i f(av) - average forward current (a) 10 5 15 20 30 25 0 dc see note (1) s qu are w a v e (d = 0.50) rated v r applied 0 15 10 5 20 average power loss (w) i f(av) - average forward current (a) 10 51520 30 25 0 dc rms limit d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 100 1000 i fsm - non-repetitive surge current (a) t p - square wave pulse duration (s) 100 1000 10 000 10 at any rated load condition and with rated v rrm applied following surge c u rrent monitor high-speed s w itch d.u.t. r g = 25 + free w heel diode v d = 25 v l irfp460 40hfl40s02
vs-mbr4045wtpbf, VS-MBR4045WT-N3 www.vishay.com vishay semiconductors revision: 30-aug-11 5 document number: 94295 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-mbr4045wtpbf 25 500 antistatic plastic tube VS-MBR4045WT-N3 25 500 antistatic plastic tube links to related documents dimensions www.vishay.com/doc?95223 part marking information to-247ac pbf www.vishay.com/doc?95226 to-247ac -n3 www.vishay.com/doc?95007 spice model www.vishay.com/doc?95297 - schottky mbr series - current rating (40 = 40 a) - voltage rating (45 = 45 v) - circuit configuration: center tap (dual) to-247 device code 6 2 4 3 5 mbr 40 45 wt pbf vs- 1 - vishay semiconductors product - pbf = lead (pb)-free and rohs compliant -n3 = halogen-free, rohs compliant, and totally lead (pb)-free environmental digit 2 3 4 5 6 1
outline dimensions www.vishay.com vishay semiconductors revision: 16-jun-11 1 document number: 95223 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera ncing per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 fk 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc 0.10 a c m m e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c ? k b d m m a (6) ? p (datum b) fp1 d1 (4) 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode
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