dmc2004vk document number: ds30925 rev. 6 - 2 1 of 8 www.diodes.com january 2013 ? diodes incorporated dmc2004vk complementary pair enhancement mode field effect transistor features ? low on-resistance ? low gate threshold voltage v gs(th) <1v ? low input capacitance ? fast switching speed ? low input/output leakage ? complementary pair mosfet ? ultra-small surface mount package ? lead-free finish; rohs compliant (notes 1 & 2) ? esd protected gate ? halogen and antimony free. ?green? device (note 3) ? ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-563 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020c ? terminal connections: see diagram ? terminals: finish ? matte ti n annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.006 grams (approximate) ordering information (note 4) part number case packaging dmc2004vk-7 sot-563 3000/tape & reel notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (roh s 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com for more in formation about diodes incorpor ated?s definitions of halogen- and antimony-free, "gree n" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm br omine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our webs ite at http://www.diodes.com/datasheets/ap02007.pdf. marking information date code key year 2007 2008 2009 2010 2011 2012 code u v w x y z month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d e3 sot-563 top view internal schematic top view bottom view esd protected s 2 d 2 q 1 q 2 d 1 s 1 g 2 g 1 cab = product type marking code ym = date code marking y = year ex: u = 2007 m = month ex: 9 = september ? green
dmc2004vk document number: ds30925 rev. 6 - 2 2 of 8 www.diodes.com january 2013 ? diodes incorporated dmc2004vk maximum ratings n-channel ? q 1 (@t a = +25c, unless otherwise specified.) characteristic symbol value unit drain source voltage v dss 20 v gate-source voltage v gss 8 v drain current (note 5) t a = +25c t a = +85c i d 670 480 ma maximum ratings p-channel ? q 2 (@t a = +25c, unless otherwise specified.) characteristic symbol value unit drain source voltage v dss -20 v gate-source voltage v gss 8 v drain current (note 5) t a = +25c t a = +85c i d -530 -380 ma thermal characteristics characteristic symbol value units total power dissipation (note 5) p d 0.45 w thermal resistance, junction to ambient (note 5) steady state r ja 281 c/w t<10s 210 c/w total power dissipation (note 6) p d 1 w thermal resistance, junction to ambient (note 6) steady state r ja 129 c/w t<10s 97 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical character istics n-channel ? q 1 (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss 20 ? ? v v gs = 0v, i d = 10a zero gate voltage drain current i dss ? ? 1.0 a v ds = 16v, v gs = 0v gate-source leakage i gss ? ? 1.0 a v gs = 4.5v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) 0.5 ? 1.0 v v ds = v gs , i d = 250a static drain-source on-resistance r ds (on) ? ? ? 0.4 0.5 0.7 0.55 0.70 0.90 v gs = 4.5v, i d = 540ma v gs = 2.5v, i d = 500ma v gs = 1.8v, i d = 350ma forward transfer admittance (note 8) |y fs | 200 ? ? ms v ds =10v, i d = 0.2a diode forward voltage v sd 0.5 ? 1.2 v v gs = 0v, i s = 115ma dynamic characteristics input capacitance c iss ? ? 150 pf v ds = 16v, v gs = 0v f = 1.0mhz output capacitance c oss ? ? 25 pf reverse transfer capacitance c rss ? ? 20 pf notes: 5. device mounted on fr-4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6. device mounted on fr-4 substrate pc board, 2oz copper, with 1inch square copper plate. 7. short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. not subject to product testing.
dmc2004vk document number: ds30925 rev. 6 - 2 3 of 8 www.diodes.com january 2013 ? diodes incorporated dmc2004vk electrical character istics p-channel ? q 2 (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss -20 ? ? v v gs = 0v, i d = -250a zero gate voltage drain current i dss ? ? -1.0 a v ds = -20v, v gs = 0v gate-source leakage i gss ? ? 1.0 a v gs = 4.5v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) -0.5 ? -1.0 v v ds = v gs , i d = -250a static drain-source on-resistance r ds (on) ? 0.7 1.1 1.7 0.9 1.4 2.0 v gs = -4.5v, i d = -430ma v gs = -2.5v, i d = -300ma v gs = -1.8v, i d = -150ma forward transfer admittance |y fs | 200 ? ? ms v ds =10v, i d = 0.2a diode forward voltage v sd -0.5 ? -1.2 v v gs = 0v, i s = -115ma dynamic characteristics (note 8) input capacitance c iss ? ? 175 pf v ds = -16v, v gs = 0v f = 1.0mhz output capacitance c oss ? ? 30 pf reverse transfer capacitance c rss ? ? 20 pf q 1 , n-channel 0 0 v , drain source voltage (v) fig. 1 typical output characteristics ds i, d r ai n c u r r e n t (a) d v , gate source voltage (v) fig. 2 typical transfer characteristics gs i, d r ai n c u r r e n t (a) d t , ambient temperature (c) fig. 3 gate threshold voltage vs. ambient temperature a v, g a t e t h r e s h o ld v o l t a g e (v) gs(th) i , drain current (a) fig. 4 static drain-source on-resistance vs. drain current d
dmc2004vk document number: ds30925 rev. 6 - 2 4 of 8 www.diodes.com january 2013 ? diodes incorporated dmc2004vk i , drain current (a) fig. 5 static drain-source on-resistance vs. drain current d i , drain-source current (a) fig. 6 static drain-source on-resistance vs. drain-source current vs. gate source voltage d 10 q 1 , n-channel (cont.) t , ambient temperature (c) fig. 7 static drain-source on-state resistance vs. ambient temperature a i , drain current (a) fig. 9 forward transfer admittance vs. drain current d v , drain-source voltage (v) fig. 10 typical capacitance ds
dmc2004vk document number: ds30925 rev. 6 - 2 5 of 8 www.diodes.com january 2013 ? diodes incorporated dmc2004vk q 2 , p-channel 0 0 -v , drain source voltage (v) fig. 11 typical output characteristics ds -i , d r ai n c u r r e n t (a) d -v , gate source voltage (v) fig. 12 typical transfer characteristics gs -i , d r ain c u r r en t (a) d t , ambient temperature (c) fig. 13 gate threshold voltage vs. ambient temperature a -v , gate t h r es h o ld v o ltage (v) gs(th) -i , drain-source current (a) fig. 14 static drain-source on-resistance vs. drain current d -i , drain-source current (a) fig. 15 static drain-source on-resistance vs. drain current d -i , drain-source current (a) fig. 16 static drain-source on-resistance vs. drain-source current vs. gate source voltage d 10
dmc2004vk document number: ds30925 rev. 6 - 2 6 of 8 www.diodes.com january 2013 ? diodes incorporated dmc2004vk q 2 , p-channel (cont.) t , ambient temperature (c) fig. 17 static drain-source on-state resistance vs. ambient temperature a -i , drain current (a) fig. 19 forward transfer admittance vs. drain current d -v , drain-source voltage (v) fig. 20 typical capacitance ds
dmc2004vk document number: ds30925 rev. 6 - 2 7 of 8 www.diodes.com january 2013 ? diodes incorporated dmc2004vk package outline dimensions suggested pad layout sot563 dim min max typ a 0.15 0.30 0.20 b 1.10 1.25 1.20 c 1.55 1.70 1.60 d - - 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 k 0.55 0.60 0.60 l 0.10 0.30 0.20 m 0.10 0.18 0.11 all dimensions in mm dimensions value (in mm) z 2.2 g 1.2 x 0.375 y 0.5 c1 1.7 c2 0.5 a m l b c h k g d x z y c1 c2 c2 g
dmc2004vk document number: ds30925 rev. 6 - 2 8 of 8 www.diodes.com january 2013 ? diodes incorporated dmc2004vk important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com
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