1 www.irf.com ? 2012 international rectifier february 18, 2013 base part number package type standard pack orderable part number ? ? form quantity IRF7748L1TRPBF directfet large can tape and reel 4000 IRF7748L1TRPBF applications ?? rohs compliant, halogen free ? ?? lead-free (qualified up to 260c reflow) ? ?? ideal for high performance isolated converter primary switch socket ?? optimized for synchronous rectification ?? low conduction losses ?? high cdv/dt immunity ?? low profile (<0.7mm) ?? dual sided cooling compatible ? ?? compatible with existing surface mount techniques ? ?? industrial qualified directfet? power mosfet ? fig 1. typical on-resistance vs. gate voltage directfet ? isometric ? ? l6 ordering information v dss v gs r ds(on) 60v min 20v max 1.7m ?? @ 10v q g tot q gd v gs(th) 146nc 40nc 2.9v d d g s ss sss applicable directfet outline and substrate outline ? ? sb sc m2 m4 l4 l6 l8 description the IRF7748L1TRPBF combines the latest hexfet? power mosfet silicon technology with the advanced directfettm packag- ing to achieve the lowest on-state resist ance in a package that has a footprint smal ler than a d2pak and only 0.7 mm profile. the directfet package is compatible with existing layout geometrie s used in power applications, pcb assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note an-1035 is followed regarding the manufacturing methods and processes. the directfet package allows dual sided coolin g to maximize thermal transfer in power systems. the IRF7748L1TRPBF is optimized for high frequency switching and synchronous rectification app lications. the reduced total loss es in the device coupled with the high level of thermal performance enables high effi ciency and low temperatures, which are key fo r sys- tem reliability improvements, and makes this device ideal for high performance power converters. absolute maximum ratings parameter max. units v ds drain-to-source voltage 60 v v gs gate-to-source voltage 20 i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) ? 148 i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) ? 104 i d @ t a = 25c continuous drain current, v gs @ 10v (silicon limited) ? 28 a ?? i dm pulsed drain current ? 592 ? e as single pulse avalanche energy ? 129 mj i ar avalanche current ? 89 a notes ? click on this section to link to the appropriate technical paper. ? click on this section to link to the directfet website. ? surface mounted on 1 in. square cu board, steady state. ? ? tc measured with thermocouple mounted to top (drain) of part. ? repetitive rating; pulse width limited by max. junction temperature. ? starting t j = 25c, l = 0.033mh, r g = 50? , i as = 89a. 0 25 50 75 100 125 150 175 200 i d , drain current (a) 1.0 1.5 2.0 2.5 3.0 t y p i c a l r d s ( o n ) ( m ? ? v gs = 7v v gs = 6v v gs = 10v v gs = 12v fig 2. typical on-resistance vs. drain current 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 2 4 6 8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 89a t j = 25c t j = 125c IRF7748L1TRPBF typical values (unless otherwise specified)
2 www.irf.com ? 2012 international rectifier february 18, 2013 ? IRF7748L1TRPBF static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions bv dss drain-to-source breakdown voltage 60 ??? ??? v v gs = 0v, i d = 250a ?? v dss / ? t j breakdown voltage temp. coefficient ??? 0.022 ??? v/c reference to 25c, i d = 2ma r ds(on) static drain-to-source on-resistance ??? 1.7 2.2 m ?? v gs = 10v, i d = 89a ?? v gs(th) gate threshold voltage 2.0 2.9 4.0 v v ds = v gs , i d = 250a i dss drain-to-source leakage current ??? ??? 20 a v ds =60 v, v gs = 0v ??? ??? 250 v ds =60v,v gs = 0v,t j =125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v gfs forward transconductance 176 ??? ??? s v ds = 10v, i d =89a q g total gate charge ??? 146 220 ? q gs1 pre? vth gate-to-source charge ??? 31 ??? ? v ds = 30v q gs2 post? vth gate-to-source charge ??? 12 ??? nc ? v gs = 10v q gd gate-to-drain charge ??? 40 ??? ? i d = 89a q godr gate charge overdrive ??? 63 ??? ? see fig.9 q sw switch charge (q gs2 + q gd) ??? 52 ??? ? q oss output charge ??? 82 ??? nc ? v ds = 16v,v gs = 0v r g gate resistance ??? 1.3 ??? ?? t d(on) turn-on delay time ??? 19 ??? ns v dd = 30v, v gs = 10v ? t r rise time ??? 104 ??? i d = 89a t d(off) turn-off delay time ??? 54 ??? r g = 1.8 ?? t f fall time ??? 77 ??? c iss input capacitance ??? 8075 ??? pf ? v gs = 0v c oss output capacitance ??? 1150 ??? v ds = 50v c rss reverse transfer capacitance ??? 540 ??? ? = 1.0mhz c oss output capacitance ??? 5390 ??? v gs =0v, v ds = 1.0v,? =1.0mhz c oss output capacitance ??? 850 ??? v gs =0v, v ds = 48v,? =1.0mhz diode characteristics ? parameter min. typ. max. units conditions i s continuous source current ??? ??? 85 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 592 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c,i s = 89a,v gs = 0v ?? t rr reverse recovery time ??? 58 ??? ns t j = 25c ,i f = 89a,v dd = 30v q rr reverse recovery charge ??? 113 ??? nc di/dt = 100a/s ??? ? v gs(th) / ? t j gate threshold voltage temp. coefficient ??? -9.9 ??? mv/c notes: ? repetitive rating; pulse width limited by max. junction temperature. ? pulse width 400s; duty cycle 2%
3 www.irf.com ? 2012 international rectifier february 18, 2013 ? IRF7748L1TRPBF notes: ? surface mounted on 1 in. square cu board, steady state. ? t c measured with thermocouple incontact with top (drain) of part. ? repetitive rating; pulse width limited by max. junction temperature. absolute maximum ratings ?? ? symbol parameter max. units p d @t c = 25c power dissipation ? 94 p d @t c = 100c power dissipation ? 47 w p d @t a = 25c power dissipation ? 3.3 ? t p peak soldering temperature 270 t j operating junction and -55 to + 175 c t stg storage temperature range thermal resistance ?? ? symbol parameter typ. max. units r qja junction-to-ambient ?? ??? 45 r qja junction-to-ambient ?? 12.5 ??? r qja junction-to-ambient ?? 20 ??? c/w r qjc junction-to-can ??? ??? 1.6 r qja-pcb junction-to-pcb mounted ??? 0.5 ? used double sided cooling, mount ing pad with large heatsink. ? mounted on minimum footprint full size board with metalized back and with small clip heatsink. ? r ? is measured at t j of approximately 90c. ? surface mounted on 1 in. square cu board (still air). ? mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) fig ? 3. ?? maximum ? e ? ec ve ? transient ? thermal ? impedance, ? junc on \ to \ case ?? 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc
4 www.irf.com ? 2012 international rectifier february 18, 2013 ? IRF7748L1TRPBF fig 4. typical output characteristics fig 7. normalized on-resistance vs. temperature fig 8. typical capacitance vs. drain-to-source voltage fig 9. typical gate charge vs . gate-to-source voltage fig 6. typical transfer characteristics fig 5. typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 7.0v 6.0v 5.5v 5.0v 4.5v bottom 4.25v ? 60s pulse width tj = 25c 4.25v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.25v ? 60s pulse width tj = 175c vgs top 15v 10v 7.0v 6.0v 5.5v 5.0v 4.5v bottom 4.25v 2 3 4 5 6 7 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tj = 25c v ds = 25v ? 60s pulse width t j = 175c -60 -20 20 60 100 140 180 t j , junction temperature (c) 0.4 0.8 1.2 1.6 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 89a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 50 100 150 200 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 48v v ds = 30v vds= 12v i d = 89a
5 www.irf.com ? 2012 international rectifier february 18, 2013 ? IRF7748L1TRPBF fig 11. maximum safe operating area 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 11.4a 19.1a bottom 89a fig 14. maximum avalanche energy vs. drain current -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a id = 10ma id = 1.0ma id = 250a fig 13. typical threshold voltage vs. junction temperature fig 10. typical source-drain diode forward voltage 25 50 75 100 125 150 175 t c , case temperature (c) 0 40 80 120 160 i d , d r a i n c u r r e n t ( a ) fig 12. maximum drain current vs. case temperature 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 175c v gs = 0v tj = 25c 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc
6 www.irf.com ? 2012 international rectifier february 18, 2013 ? IRF7748L1TRPBF fig 17. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 89a fig 15. typical avalanche current vs. pulse width notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 ) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 19a, 19b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 3) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? fig 16. maximum avalanche energy vs. temperature 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) 0.10 0.01 0.05 duty cycle = single pulse
7 www.irf.com ? 2012 international rectifier february 18, 2013 ? IRF7748L1TRPBF fig 19a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 20a. switching time test circuit fig 18a. gate charge test circuit t p v (br)dss i as fig 19b. unclamped inductive waveforms fig 20b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 18b. gate charge waveform
8 www.irf.com ? 2012 international rectifier february 18, 2013 ? IRF7748L1TRPBF note: for the most current drawing please refer to ir website at http://www.irf.com/package/ directfet?board footprint, l6 outline (large size can, 6-source pads). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. g = gate d = drain s = source g d s d d d d d s s s s s
9 www.irf.com ? 2012 international rectifier february 18, 2013 ? IRF7748L1TRPBF directfet ? outline dimension, l6 outline (large size can, 6-source pads). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. directfet ? part marking code a b c d e f g h j k l m r p 0.017 0.029 0.003 0.007 0.057 0.104 0.236 0.048 0.026 0.024 max 0.360 0.280 0.38 0.68 0.02 0.09 1.35 2.55 5.90 1.18 0.55 0.58 min 9.05 6.85 0.42 0.74 0.08 0.17 1.45 2.65 6.00 1.22 0.65 0.62 max 9.15 7.10 0.015 0.027 0.003 0.001 0.100 0.053 0.232 0.046 0.023 0.022 min 0.270 0.356 metric imperial dimensions 0.98 1.02 0.73 0.77 0.040 0.039 0.030 0.029 l1 0.159 3.95 4.05 0.155 l2 0.214 5.35 5.45 0.210 dimensions are shown in millimeters (inches) gate marking part number logo batch number date code line above the last character of the date code indicates "lead-free" + note: for the most current drawing please refer to ir website at http://www.irf.com/package/
10 www.irf.com ? 2012 international rectifier february 18, 2013 ? IRF7748L1TRPBF directfet ? tape & reel dimension (showing component orientation). qualification information ? ? qualification level ? industrial ?? * moisture sensitivity level directfet msl1 (per jedec j-std-020d ???) rohs compliant yes ? ? qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability ?? higher qualification ratings may be av ailable should the user have such requirements. please contact your international re ctifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ??? applicable version of jedec standard at the time of product release. * ? industrial qualification standards ex cept autoclave test conditions . ? ir world headquarters: 101n sepulveda blvd, el segundo, california 90245, usa to ? contact ? interna onal ? rec er, ? please ? visit ? h p://www.irf.com/whoto \ call/ loaded tape feed direction note: controlling dimensions in mm code a b c d e f g h imperial min 4.69 0.154 0.623 0.291 0.283 0.390 0.059 0.059 max 12.10 4.10 16.30 7.60 7.40 10.10 n.c 1.60 min 11.90 3.90 15.90 7.40 7.20 9.90 1.50 1.50 metric dimensions max 0.476 0.161 0.642 0.299 0.291 0.398 n.c 0.063 + note: controlling dimensions in mm std reel quantity is 4000 parts. (ordered as IRF7748L1TRPBF). reel dimensions max n.c n.c 0.520 n.c 3.940 0.880 0.720 0.760 imperial min 330.00 20.20 12.80 1.50 99.00 n.c 16.40 15.90 standard option (qty 4000) code a b c d e f g h max n.c n.c 13.20 n.c 100.00 22.40 18.40 19.40 min 12.992 0.795 0.504 0.059 3.900 n.c 0.650 0.630 metric note: for the most current drawing please refer to ir website at http://www.irf.com/package/ date comments 2/13/13 tr1 option removed and tape & reel info updated ac cordingly. hyperlinks added throw-out the document revision history
|
