2SB1122 features adoption of fbet process.. very small size making it easy to provide highdensity hybrid ic? s. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current i c -1 a collector current (pulse) i cp -2 a collector dissipation p c 500 mw jumction temperature t j 150 storage temperature t stg -55to+150 product specification sales@twtysemi.com http://www.twtysemi.com sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb = -50v , i e = 0 -100 na emitter cutoff current i ebo v cb =-4v,i e = 0 -100 na dc current gain h fe v ce =-2v,i c = -100ma 100 560 gain bandwidth product f t v ce = -10v , i c = -50ma 150 mhz output capacitance c ob v cb = -10v , f = 1mhz 12 pf collector-emitter saturation voltage v ce(sat) i c = -500ma , i b = -50ma -180 -500 v base-emitter saturation voltage v be(sat) i c = -500ma , i b = -50ma -0.9 -1.2 v collector-base breakdown voltage v (br)cbo i c = -10a , i e =0 -60 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,r be = -50 v emitter-base breakdown voltage v (br)ebo i e = -10a , i c =0 -5 v turn-on time ton 40 ns storage time tstg 300 ns fall time tf 30 ns h fe classification marking rank r s t u hfe 100 200 140 280 200 400 280 560 be 2SB1122 product specification sales@twtysemi.com http://www.twtysemi.com sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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