strong ir fet? IRFP7718PBF hexfet ? power mosfet d s g g d s gate drain source application ? ? brushed motor drive applications ? ? bldc motor drive applications ?? battery powered circuits ? ? half-bridge and full-bridge topologies ? ? synchronous rectifier applications ? ? resonant mode power supplies ? ? or-ing and redundant power switches ? ? dc/dc and ac/dc converters ? ? dc/ac inverters benefits ? ? improved gate, avalanche and dynamic dv/dt ruggedness ? ? fully characterized capacitance and avalanche soa ? ? enhanced body diode dv/dt and di/dt capability ? ? lead-free, rohs compliant base part number package type standard pack orderable part number form quantity IRFP7718PBF to-247 tube 25 IRFP7718PBF v dss 75v r ds(on) typ. 1.45m ?? max 1.80m ?? i d (silicon limited) 355a ? i d (package limited) 195a ? fig 1. typical on-resistance vs. gate voltage fig 2. maximum drain current vs. case temperature to-247ac g d s d 1 www.irf.com ? 2015 international rectifier submit datasheet feedback february 19, 2015 25 50 75 100 125 150 175 t c , case temperature (c) 0 100 200 300 400 i d , d r a i n c u r r e n t ( a ) limited by package 4 8 12 16 20 v gs , gate-to-source voltage (v) 0 2 4 6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e (m ? ) t j = 25c t j = 125c i d = 100a
? IRFP7718PBF 2 www.irf.com ? 2015 international rectifier submit datasheet feedback february 19, 2015 absolute maximium rating symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) 355 ? a i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) 250 ? i d @ t c = 25c continuous drain current, v gs @ 10v (wire bond limited) 195 i dm pulsed drain current ?? 1590 ? p d @t c = 25c maximum power dissipation 517 w linear derating factor 3.5 w/c v gs gate-to-source voltage 20 v t j t stg operating junction and storage temperature range -55 to + 175 ? c ? soldering temperature, for 10 seconds (1.6mm from case) 300 mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) ? avalanche characteristics ? e as (thermally limited) single pulse avalanche energy ?? 1160 mj e as (thermally limited) single pulse avalanche energy ?? 2004 i ar avalanche current ? see fig 14, 15, 23a, 23b a e ar repetitive avalanche energy ? mj thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ?? ??? 0.29 c/w ? r ? cs case-to-sink, flat greased surface 0.24 ??? r ? ja junction-to-ambient ? ??? 40 static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 75 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 42 ??? mv/c reference to 25c, i d = 2ma ? r ds(on) static drain-to-source on-resistance ??? 1.45 1.80 v gs = 10v, i d = 100a ? ??? 1.60 ??? v gs = 6v, i d = 50a ? v gs(th) gate threshold voltage 2.1 ??? 3.7 v v ds = v gs , i d = 250a i dss drain-to-source leakage current ??? ??? 1.0 a v ds =75 v, v gs = 0v ??? ??? 150 v ds =75v,v gs = 0v,t j =125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v r g gate resistance ??? 0.9 ??? ?? m ??? notes: ?? calculated continuous current based on maximum allowable junction temperature. bond wire current limit is 195a. note that current limitations aris ing from heating of the device leads may occur with some lead mounting arrangements. (refer to an-1140) ?? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 233h, r g = 50 ? , i as = 100a, v gs =10v. ?? i sd ? 100a, di/dt ? 1279a/s, v dd ? v (br)dss , t j ?? 175c. ?? pulse width ? 400s; duty cycle ? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? r ? is measured at t j approximately 90c. ? limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 63a, v gs =10v. . ? pulse drain current is limited at 780a by source bonding technology.
? IRFP7718PBF 3 www.irf.com ? 2015 international rectifier submit datasheet feedback february 19, 2015 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions gfs forward transconductance 420 ??? ??? s v ds = 10v, i d =100a q g total gate charge ??? 552 830 i d = 100a q gs gate-to-source charge ??? 119 ??? v ds = 38v q gd gate-to-drain charge ??? 168 ??? v gs = 10v q sync total gate charge sync. (qg? qgd) ??? 384 ??? t d(on) turn-on delay time ??? 58 ??? ns v dd = 38v t r rise time ??? 164 ??? i d = 100a t d(off) turn-off delay time ??? 266 ??? r g = 2.6 ?? t f fall time ??? 160 ??? v gs = 10v ? c iss input capacitance ??? 29550 ??? pf ? v gs = 0v c oss output capacitance ??? 2270 ??? v ds = 25v c rss reverse transfer capacitance ??? 1395 ??? ? = 100khz, see fig.7 c oss eff.(er) effective output capacitance (energy related) ??? 2010 ??? v gs = 0v, vds = 0v to 60v ? c oss eff.(tr) output capacitance (time related) ??? 2560 ??? v gs = 0v, vds = 0v to 60v ? diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 355 ? a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 1590 ? integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c,i s = 100a,v gs = 0v ?? dv/dt peak diode recovery dv/dt ?? ??? 8.6 ??? v/ns t j = 175c,i s =100a,v ds = 75v t rr reverse recovery time ??? 75 ??? ns t j = 25c v dd = 64v ??? 80 ??? t j = 125c i f = 100a, q rr reverse recovery charge ??? 208 ??? nc t j = 25c di/dt = 100a/s ??? ??? 251 ??? t j = 125c ? i rrm reverse recovery current ??? 4.8 ??? a t j = 25c ? nc ? d s g
? IRFP7718PBF 4 www.irf.com ? 2015 international rectifier submit datasheet feedback february 19, 2015 fig 6. normalized on-resistance vs. temperature fig 5. typical transfer characteristics fig 4. typical output characteristics fig 3. typical output characteristics fig 7. typical capacitance vs. drain-to-source voltage fig 8. typical gate charge vs . gate-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 25c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 25c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 2.0 3.0 4.0 5.0 6.0 7.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 25v ? 60s pulse width t j = 25c t j = 175c -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 100a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 1000000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 100 200 300 400 500 600 700 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 60v v ds = 38v v ds= 15v i d = 100a
? IRFP7718PBF 5 www.irf.com ? 2015 international rectifier submit datasheet feedback february 19, 2015 fig 10. maximum safe operating area fig 11. drain- to?sou rce breakdown voltage fig 13. typical on-resista nce vs. drain current fig 9. typical source-drain diode forward voltage fig 12. typical c oss stored energy 0.0 0.5 1.0 1.5 2.0 2.5 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 75 80 85 90 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 2.0ma 0 10 20 30 40 50 60 70 80 v ds, drain-to-source voltage (v) 0.0 1.0 2.0 3.0 4.0 5.0 e n e r g y ( j ) 0.1 1 10 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec 100sec dc operation in this area limited by r ds (on) limited by package 0 50 100 150 200 i d , drain current (a) 1.4 1.6 1.8 2.0 2.2 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) v gs = 5.5v v gs = 6.0v v gs = 7.0v v gs = 8.0v v gs = 10v
? IRFP7718PBF 6 www.irf.com ? 2015 international rectifier submit datasheet feedback february 19, 2015 fig 14. maximum effective transient thermal impedance, junction-to-case fig 16. maximum avalanche energy vs. temperature fig 15. avalanche current vs. pulse width notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 23a, 23b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 13) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. (single pulse) allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 100a
? IRFP7718PBF 7 www.irf.com ? 2015 international rectifier submit datasheet feedback february 19, 2015 fig 17. threshold voltage vs. temperature fig 18. typical recovery current vs. dif/dt fig 20. typical stored charge vs. dif/dt fig 21. typical stored charge vs. dif/dt fig 19. typical recovery current vs. dif/dt -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a i d = 1.0ma i d = 1.0a 0 200 400 600 800 1000 di f /dt (a/s) 0 200 400 600 800 1000 q r r ( n c ) i f = 100a v r = 64v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 200 400 600 800 1000 q r r ( n c ) i f = 60a v r = 64v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 5 10 15 20 25 30 i r r m ( a ) i f = 100a v r = 64v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 5 10 15 20 25 30 i r r m ( a ) i f = 60a v r = 64v t j = 25c t j = 125c
? IRFP7718PBF 8 www.irf.com ? 2015 international rectifier submit datasheet feedback february 19, 2015 fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 23a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 24a. switching time test circuit fig 25a. gate charge test circuit t p v (br)dss i as fig 23b. unclamped inductive waveforms fig 24b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 25b. gate charge waveform
? IRFP7718PBF 9 www.irf.com ? 2015 international rectifier submit datasheet feedback february 19, 2015 to-247ac package outline (dimensions are shown in millimeters (inches)) note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ac package is not recommended for surface mount application. to-247ac part marking information year 1 = 2001 date code part number international logo rectifier assembly 56 57 irfpe30 135h line h indicates "lead-free" week 35 lot code in the assembly line "h" assembled on ww 35, 2001 notes: this part marking information applies to devices produced after 02/26/2001 note: "p" in assembly line position example: with assembly this is an irfpe30 lot code 5657
? IRFP7718PBF 10 www.irf.com ? 2015 international rectifier submit datasheet feedback february 19, 2015 qualification information ? ? qualification level ? industrial (per jedec jesd47f) ?? moisture sensitivity level to-247ac n/a rohs compliant yes ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. ir world headquarters: 101n sepulveda blvd, el segundo, california 90245, usa to ? contact ? interna onal ? rec er, ? please ? visit ? h p://www.irf.com/whoto \ call/ revision history date comments 02/19/2015 ?? updated e as (l =1mh) = 2004mj on page 2 ?? updated note 9 ?limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 63a, v gs =10v? on page 2
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