inf ormation in this technical data sheet is believed to be correct and reliable. however, no responsibility is assumed for possible inaccuracies or omission. specifications are subject to change without notice. ? 20 1 4 advanced photonix, inc. all rights reserved. advanced photonix inc. 1240 avenida acaso, camarillo ca 93012 ? phone (805) 987 - 0146 ? fax (805) 484 - 9935 ? www.advancedphotonix.com rev 0 8 /0 6 - 15 to - 5 dual element hermetic photocell features description applications ? passive resistance output ? hermetic sealed the n sl - 0 7 - 00 6 is a dual element type 5 cds photoconductive cell in a flat lens to - 5 hermetic package. ? industrial absolute maximum rating (ta)= 23c unless otherwise noted note: (1) derate linearly to 0 at 75 ? c (2) > 0.08 from case for <5 sec. (3) cells light adapted at 30 to 50 ftc for 16 hrs mi n imum prior to electrical tests . (4) ml is the percent difference between the phot o- cell halves with the higher resistance used as the reference. ( 5 ) print nsl - 0 7 - 005 and dat e code yyww . symbol parameter min max units v p voltage (peak ac or dc) 150 v p d power dissipation @ 25 ? c (1) 60 mw t op operating temperature - 6 0 + 7 5 c t s tg storage temperature - 6 0 + 7 5 c t s soldering temperature (2) +2 6 0 c reliability contact api for recommendations on specific test conditions and procedures. electro - optical characteristics (ta)= 23c, unless otherwise noted symbol characteristic test conditions min typ max units r l light resistance 1 ftc., 2854 ? k (3) 10 20 30 k ? r d dark resistance 5 sec after removal of test light . 10 m? ? p spectral peak 550 nm m l light resistance matching (4) 20 % nsl - 0 7 - 0 0 6 a d v anced ph o t onix, inc. dimensions in mm. sensitive surface 38 nom. 4.4 - 4.6 1.9 - 2.5 8.1 - 8.4 4.9 - 5.2 0.4 - 0.5 9.0 - 9.3 6.0 - 6.2 1.2 max.
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