20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 BF420, bf422 small signal transistors (npn) id r>j o> e max-0 .022 f (0. lq 181 55) ^ (4.6 t__ 2 i -14 features ?j' * npn silicon epitaxial planar transistors especially suited for application in class-b video output stages of tv receivers and * as complementary types, the pnp transistors bf421 and bf423 are recommended xi98 (2.5) e ?li o il?b c dimensions in inches and (millimeters) mechanical data case: to-92 plastic package weight: approx. 0.18 g maximum ratings and electrical characteristics ratings at 25 c ambient temperature unless otherwise specified collector-base voltage BF420 bf422 collector-emitter voltage bf422 collector-emitter voltage BF420 emitter-base voltage collector current peak collector current power dissipation at tamb = 25 c junction temperature storage temperature range symbol vcbo vcbo vceo vcer vebo lc 'cm ptot tj ts value 300 250 250 300 5 50 100 8301> 150 -65 to +150 unit v v v v v ma ma mw c c 1) valid provided that leads are kept at ambient temperature at a distance of 2 mm from case n.i .seini-t (inductors reserves the right lo change lest conditions, parameter limits ;md package dimensions wkhenil notice inr'armiition lumished by nj scmi-c unducton i$ believed to he htilh accurate .ind reliable .11 the lime of guing lo press. however ^ i oiijucuirs .i^suincs no responsibility lor ;iny ermrs >r*>. iirrt^nt hefiirf nfncin** tinten
BF420, bf422 electrical characteristics ratings at 25 c ambient temperature unless otherwise specified collector-base breakdown voltage BF420 atlc = 100jia, ib = 0 bf422 collector-emitter breakdown voltage bf422 atlc = 10ma, ie = 0 collector-emitter breakdown voltage BF420 atrbe = 2.7kq, lc = 10ma emitter-base breakdown voltage at ie = 100 na, ib = 0 collector-base cutoff current at vcb = 200 v, ie = 0 collector-emitter cutoff current at rbe = 2.7 kq, vce = 250 v at rbe = 2.7 kii, vce = 200 v, tj = 150 c collector saturation voltage at lc = 30 ma, ib = 5 ma dc current gain at vce = 20 v, lc = 25 ma gain-bandwidth product at vce = 10v, lc = 10ma feedback capacitance at vce = 30 v, lc = 0, f = 1 mhz thermal resistance junction to ambient air symbol v(br)cbo v(br)cbo v(br)ceo v(br)cer v(br)ebo icbo icer icer vcesat hfe fr cre rthja min. 300 250 250 300 5 - - 50 60 - - typ. - - - - - - - - - - max. ? - - - 10 50 10 0.6 - - 1.6 1501> unit v v v v v na na ma v - mhz pf k/w 1> valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
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