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preliminary EMA2217 elite micropower inc. elite micropower inc. reserves the right to make changes to improve reliability or manufacturability without notice, and customers are advised to obtain the latest versio n of relevant information prior to placing orders. dsa2217_v1.0 november 29 th 2007 page 1 of 17 www.elitemicropower.com 2-w stereo audio power amplifier with four selectable gain settings general description the EMA2217 is a stereo audio power amplifier in a 20-pin tssop thermally enhanced package capable of driving 2w of continuous rms power per channel into 4 ? loads. internal gain control minimizes the number of external components needed, simplifying the design, and freeing up board space for other features. amplifier gain is internally configured and co ntrolled by way of two terminals (g0 and g1). gain settings of 6 db, 10 db, 15.6 db, and 21.6 db are provided. emp products are pb-free and rohs compliant. features internal gain control which eliminates external gain-setting resistors fully differential configuration low supply current (6ma typical) de-pop citcuitry applications notebook computers, pdas, and other portable audio devices
preliminary EMA2217 elite micropower inc. elite micropower inc. reserves the right to make changes to improve reliability or manufacturability without notice, and customers are advised to obtain the latest versio n of relevant information prior to placing orders. dsa2217_v1.0 november 29 th 2007 page 2 of 17 www.elitemicropower.com connection diagram tssop-20 order information EMA2217-50qe16grr 50 5.0v operation qe16 tssop-20fd package g lead-free package; snbi (pb free) r commercial grade temperature rating: -40 to 85c r package in tape & reel marking & packing information package type product id package marking transport media tssop-20 EMA2217-50qe16grr emp EMA2217 date code 3k units tape & reel terminal functions terminal name no. i/o description bypass 10 - tap to voltage divider for internal midsupply bias generator g0 2 i bit 0 of gain select g1 3 i bit 1 of gain select gnd 1,11,13,20 - ground linn 5 i left channel negative differential input linp 9 i left channel positive differential input loutn 8 o left channel negative output loutp 4 o left channel positive output nc 12 - no connection pv dd 6,15 i supply voltage terminal
preliminary EMA2217 elite micropower inc. elite micropower inc. reserves the right to make changes to improve reliability or manufacturability without notice, and customers are advised to obtain the latest versio n of relevant information prior to placing orders. dsa2217_v1.0 november 29 th 2007 page 3 of 17 www.elitemicropower.com routn 14 o right channel negative output routp 18 o right channel positive output rinn 17 i right channel negative differential input rinp 7 i right channel positive differential input sdnb 19 i places ic in shutdown mode when held low v dd 16 i supply voltage terminal function block diagram
preliminary EMA2217 elite micropower inc. elite micropower inc. reserves the right to make changes to improve reliability or manufacturability without notice, and customers are advised to obtain the latest versio n of relevant information prior to placing orders. dsa2217_v1.0 november 29 th 2007 page 4 of 17 www.elitemicropower.com absolute maximum ratings supply voltage 6.0v storage temperature -65c to +150c input voltage -0.3v to vdd +0.3v power dissipation internally limited esd susceptibility hbm 2kv, mm 200v junction temperature 150c thermal resistance ja (tssop-20 fd) 55c/w operating ratings temperature range -40c Q t a Q 85c supply voltage 2.5v Q v dd Q 5.5v electrical characteristics apply for v dd = 5v, a v =6db, r l = 8 and t a = 25c ( unless otherwise noted) EMA2217 symbol parameter conditions min typ max units i dd quiescent power supply current v in = 0v, no load 6 10 ma i sd shutdown current v sdnb = 0.4v 0.1 1.0 a i ih high-level input current sdnb = 1.2v g0 = g1 = 5v 10 0.1 a i il low-level input current sdnb = 0.4v g0 = g1 = 0v 3.3 0.1 a v ih high-level input voltage sdnb g0/g1 1.2 5 v v il low-level input voltage sdnb g0/g1 0 0.4 v z i input impedance 20 25 30 k ? v os output offset voltage v in = 0v, no load, measure differentially 5 25 mv thd + n = 1 %, f = 1khz r l = 3 ? r l = 4 ? r l = 8 ? 2.3 2 1.32 p o output power thd + n = 10 %, f = 1khz r l = 3 ? r l = 4 ? r l = 8 ? 2.9 2.45 1.6 w thd+n total harmonic distortion + noise f = 1khz r l = 3 ? , p o = 1.75w r l = 4 ? , p o = 1.5w r l = 8 ? , p o = 1w 0.07 0.06 0.015 % psrr power supply rejection ratio v ripple = 200mv pp , sine wave, input ac-grounded f = 20 to 20khz, -75 db cmrr common-mode rejection ratio v i = 1v pp , f = 20 to 20khz -62 db
preliminary EMA2217 elite micropower inc. elite micropower inc. reserves the right to make changes to improve reliability or manufacturability without notice, and customers are advised to obtain the latest versio n of relevant information prior to placing orders. dsa2217_v1.0 november 29 th 2007 page 5 of 17 www.elitemicropower.com apply for v dd = 2.6v, a v =6db, r l = 8 and t a = 25c ( unless otherwise noted) EMA2217 symbol parameter conditions min typ max units i dd quiescent power supply current v in = 0v, no load 4 10 ma i sd shutdown current v sdnb = 0.4v 0.1 1.0 a i ih high-level input current sdnb = 1.2v g0 = g1 = 2.6v 10 0.1 a i il low-level input current sdnb = 0.4v g0 = g1 = 0v 3.3 0.1 a v ih high-level input voltage sdnb g0/g1 1.2 2.6 v v il low-level input voltage sdnb g0/g1 0 0.4 v z i input impedance 20 25 30 k ? v os output offset voltage v in = 0v, no load, measure differentially 5 25 mv thd + n = 1 %, f = 1khz r l = 3 ? r l = 4 ? r l = 8 ? 0.55 0.5 0.32 p o output power thd + n = 10 %, f = 1khz r l = 3 ? r l = 4 ? r l = 8 ? 0.68 0.6 0.4 w thd+n total harmonic distortion + noise f = 1khz r l = 3 ? , p o = 0.5w r l = 4 ? , p o = 0.4w r l = 8 ? , p o = 0.25w 0.03 0.02 0.03 % psrr power supply rejection ratio v ripple = 200mv pp , sine wave, input ac-grounded f = 20 to 20khz, -62 db cmrr common-mode rejection ratio v i = 1v pp , f = 20 to 20khz -70 db
preliminary EMA2217 elite micropower inc. elite micropower inc. reserves the right to make changes to improve reliability or manufacturability without notice, and customers are advised to obtain the latest versio n of relevant information prior to placing orders. dsa2217_v1.0 november 29 th 2007 page 6 of 17 www.elitemicropower.com typical performance characteristics
preliminary EMA2217 elite micropower inc. elite micropower inc. reserves the right to make changes to improve reliability or manufacturability without notice, and customers are advised to obtain the latest versio n of relevant information prior to placing orders. dsa2217_v1.0 november 29 th 2007 page 7 of 17 www.elitemicropower.com f - frequency - hz total harmonic distortion plus noise vs frequency 0.01 20k 10k 20 100 1k 5k 0.1 0.5 0.05 10 5 1 v dd = 5v r l = 8ohm p o = 1w a v = 21.6db a v = 15.6db a v = 6db po - output power - w total harmonic distortion plus noise vs output power 0.01 1 10m 100m 500m 0.1 0.5 0.05 10 5 1 f = 20hz f = 20khz f = 1khz v dd = 2.6v r l = 3ohm a v = 6db
preliminary EMA2217 elite micropower inc. elite micropower inc. reserves the right to make changes to improve reliability or manufacturability without notice, and customers are advised to obtain the latest versio n of relevant information prior to placing orders. dsa2217_v1.0 november 29 th 2007 page 8 of 17 www.elitemicropower.com
preliminary EMA2217 elite micropower inc. elite micropower inc. reserves the right to make changes to improve reliability or manufacturability without notice, and customers are advised to obtain the latest versio n of relevant information prior to placing orders. dsa2217_v1.0 november 29 th 2007 page 9 of 17 www.elitemicropower.com
preliminary EMA2217 elite micropower inc. elite micropower inc. reserves the right to make changes to improve reliability or manufacturability without notice, and customers are advised to obtain the latest versio n of relevant information prior to placing orders. dsa2217_v1.0 november 29 th 2007 page 10 of 17 www.elitemicropower.com
preliminary EMA2217 elite micropower inc. elite micropower inc. reserves the right to make changes to improve reliability or manufacturability without notice, and customers are advised to obtain the latest versio n of relevant information prior to placing orders. dsa2217_v1.0 november 29 th 2007 page 11 of 17 www.elitemicropower.com
preliminary EMA2217 elite micropower inc. elite micropower inc. reserves the right to make changes to improve reliability or manufacturability without notice, and customers are advised to obtain the latest versio n of relevant information prior to placing orders. dsa2217_v1.0 november 29 th 2007 page 12 of 17 www.elitemicropower.com application information figure 1. typical EMA2217 application circuit using single-ended inputs
preliminary EMA2217 elite micropower inc. elite micropower inc. reserves the right to make changes to improve reliability or manufacturability without notice, and customers are advised to obtain the latest versio n of relevant information prior to placing orders. dsa2217_v1.0 november 29 th 2007 page 13 of 17 www.elitemicropower.com application information figure 2. typical EMA2217 application circuit using differential inputs note a: a 0.1 f ceramic capacitor should be placed as close as possible to the ic. for filtering lower frequency noise signals, a larger electrolytic capacitor of 10 f or greater should be placed near the audio power amplifier.
preliminary EMA2217 elite micropower inc. elite micropower inc. reserves the right to make changes to improve reliability or manufacturability without notice, and customers are advised to obtain the latest versio n of relevant information prior to placing orders. dsa2217_v1.0 november 29 th 2007 page 14 of 17 www.elitemicropower.com f c -3 db application information shutdown modes the EMA2217 employs a shutdown mode of operation designed to reduce supply current, i dd , to the absolute minimum level during periods of nonuse for battery-power conservation. the sdnb input terminal should be held high during normal operation when the amplifier is in use. pulling sdnb low causes the outputs to mute and the amplifier to enter a low-current state, i dd 1 a. sdnb should never be left unconnected because amplifier operation would be unpredictable. gain setting via g0 and g1 inputs the gain of the EMA2217 is set by two input terminals, g0 and g1. table 1. gain settings g0 g1 gain (db) 0 0 6 0 1 10 1 0 15.6 1 1 21.6 the gains listed in table 1 are realized by changing the ta ps on the feedback resistors inside the amplifier. input impedance, zi (25 k ? ), is independent on the gain setting. the actual gain settings are controlled by ratios of resistors, so the actual gain distribution from part-to-part is quite good. however, the input impedance will shift by 20% due to shifts in the actual resistance of the input impedance. for design purposes, the input network (discussed in the next section) should be designed assuming an input impedance of 20 k ? , which is the absolute minimum input impedance of the EMA2217. input capacitor, c i in the typical application an input capacitor, c i , is required to allow the amplifier to bias the input signal to the proper dc level for optimum operation. in this case, c i and the input impedance of the amplifier, z i , form a high-pass filter with the corner fr equency determined in equation 1. (1) c z 2 1 f i i ) c(highpass = the value of c i is important to consider as it directly affects the bass (low frequency) performance of the circuit. consider the example where z i is 20 k ? , which is the absolute minimum in put impedance of the EMA2217,and the specification calls for a flat bass response down to 40 hz. equation 2 is reconfigured as equation 2. f z 2 1 c c i i = (2) in this example, c i is 0.2 f, so one would likely choose a value in the range of 0.22 f to 1 f. a further consideration for this capacitor is the leakage path from the input source through the input network (c i ) and the feedback network to the load. this leakage current creates a dc offset voltage at the input to the amplifier that reduces useful headroom, especially in high-gain applications. for this reason a low-leakage
preliminary EMA2217 elite micropower inc. elite micropower inc. reserves the right to make changes to improve reliability or manufacturability without notice, and customers are advised to obtain the latest versio n of relevant information prior to placing orders. dsa2217_v1.0 november 29 th 2007 page 15 of 17 www.elitemicropower.com tantalum or ceramic capacitor is the best choice. when polarized capacitors are used, the positive side of the capacitor should face the amplifier input in most applications, as the dc level there is held at v dd /2, which is likely higher than the source dc level. it is important to confirm the capacitor polarity in the application. power supply decoupling, cs the EMA2217 is a high-performance cmos audio amplifier that requires adequate power supply decoupling to ensure the output total harmonic distortion (thd) is as low as possible. power supply decoupling also prevents oscillations for long lead lengths between the amplifier and the speaker. the optimum decoupling is achieved by using two capacitors of different types that target different types of noise on the power supply leads. for higher frequency transients, spikes, or digital hash on the line, a good low equivalent-series-resistance (esr) ceramic capacitor, typically 0.1 f placed as close as possible to the device vdd lead, works best. for filtering lowe r-frequency noise signals, a larger aluminum electrolytic capacitor of 10 f or greater placed near the audio power amplifier is recommended. midrail bypass capacitor, c byp the mid-rail bypass capacitor c byp , the most critical capacitor serves several important functions. during start-up or recovery from shutdown mode, c byp determines the rate at which the amplifier starts up. the second function is to reduce noise produced by the po wer supply caused by coupling into the output drive signal. this noise is from the mid-rail generation circ uit internal to the amplifier, which appears as degraded psrr and thd+n. bypass capacitor, c byp , values of 0.47 f to 1 f ceramic or tantalum low-esr capacitors are recommended for the best thd and noise performance. using low-esr capacitors low-esr capacitors are recommended throughout this applications section. a real (as opposed to ideal) capacitor can be modeled simply as a re sistor in series with an ideal capacitor. the voltage drop across this resistor minimizes the beneficial effects of the capacitor in the circuit. the lower the equivalent value of this resistance, the more the real capacitor behaves like an ideal capacitor.
preliminary EMA2217 elite micropower inc. elite micropower inc. reserves the right to make changes to improve reliability or manufacturability without notice, and customers are advised to obtain the latest versio n of relevant information prior to placing orders. dsa2217_v1.0 november 29 th 2007 page 16 of 17 www.elitemicropower.com tssop-20 exposed pad outline dimension
preliminary EMA2217 elite micropower inc. elite micropower inc. reserves the right to make changes to improve reliability or manufacturability without notice, and customers are advised to obtain the latest versio n of relevant information prior to placing orders. dsa2217_v1.0 november 29 th 2007 page 17 of 17 www.elitemicropower.com ? copyright 2006 all rights reserved. no part of this document may be reproduced or duplicated in any form or by any means without the prior permission of emp. the contents contained in this document are believed to be accurate at the time of publication. emp assumes no responsibility for any error in this document, and reserves the right to change the products or specification in this document without notice. the information contained herein is presented only as a guide or examples for the application of our products. no responsibility is assumed by emp for any infringement of patents, copyrights, or other intellectual property rights of third parties which may result from its use. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of emp or others. any semiconductor devices may have inherently a certai n rate of failure. to minimize risks associated with customer's application, adequate design and operating safeguards against injury, damage, or loss from such failure, should be provided by the cust omer when making application designs. emp's products are not authorized for use in critical applications such as, but not limited to, life support devices or system, where failure or abnormal operation may direct ly affect human lives or cause physical injury or property damage. if products described here are to be used for such kinds of application, purchaser must do its own quality assurance testing appropriate to such applications.

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