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| = ! "# $% & % ' ( ) *" "% + , -. / 0 ! & -. / 0 ! 1 2! , 3 $ ! * $ ! 45 6 7867 68 6 95 9 - :4 7 -7 /6 ;5< 8 6 =< 9 irg4pc30kpbf insulated gate bipolar transistor pd - 94921 * , >>> 6 * $ ?4@4( $ 5 61 >>> a& * , ; 4+! ? >>> 1 & & % 86 9 >>> 8b9 to-247ac e c g n-channel features ! "#$ %&' '( ) ) ) * + ( ,+ -) . ) /0-1/. +, /234 ) . 56$ * 756$ ) , ( $ 158'! 9 158'! 2 + www.irf.com 1 * :- 2 www.irf.com c (% 8 9 d e c ( % 8 9 d 1 $@ 6 c ( % 8 9 d 7e 20+ d d * d d 2550+ d 7 4 1 @ d e 4* 7 ? 2$/ % # d 67 d + f f 255$/ % # d 6 d , $@ 6g4 4 1 $/ % # d 6 e 67 $% & % d d ' 14 4* 7 ? 4 h 20+ d d 4 * d g d 4 1 2550+ d g d 4* 7 ? @ d g d + f f $/ % # d 6 d , $@ 6 4 1 2 $/ % # d 6 d , 4* 7 ? 255 $/ % # d 67 d 1 4 1 $/ % # d 6 d + f f # d 7 d i - 5 !? !! d g d 2!! d d !@ 7 $@ 6e *" 5 ! d e d j 6-ib ! "# k ? / d d 4 ' k ? / d d 4 6 d d ! 556 5 k ? / d 61 d a 4 6 d 6 d 1 d 6 6e d 6 d $@ 64 d 67 d 4 (% % 76 d 6 4 ' d a d ! 5565% % d d a 4 ' @ / 61 6 d $ = 4 d d 4 l ( d d 6 ' 4 4 d d 4 4 ( #? d d ) ) $ ! "# $ 0 5 % % %! www.irf.com 3 "* ' # 0.1 1 10 100 1 10 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20s pulse width ge t = 25 c j o t = 150 c j o 0.1 1 10 100 5 10 15 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 25 c j o t = 150 c j o * '" # 0 5 10 15 20 25 30 35 40 0.1 1 10 100 f, frequency (khz) a 60% of rated voltage i ideal diodes square wave: for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j triangular wave: i clamp voltage: 80% of rated power dissipation = 24w 4 www.irf.com ! " # ! 25 50 75 100 125 150 0 5 10 15 20 25 30 t , case temperature ( c) maximum dc collector current(a) c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 4.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 8 c i = a 16 c i = a 32 c 4, ! 89 www.irf.com 5 " # $ # $ " # %&# $ ' %&# ! 0 20 40 60 80 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 16a cc c 0 10 20 30 40 50 0.5 1.0 1.5 r , gate resistance (ohm) total switching losses (mj) g v = 480v v = 15v t = 25 c i = 16a cc ge j c -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 t , junction temperature ( c ) total switching losses (mj) j r = ohm v = 15v v = 480v g ge cc i = a 32 c i = a 16 c i = a 8 c ? 7 ? 1 10 100 0 300 600 900 1200 1500 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res 6 www.irf.com %&# %( 0 8 16 24 32 40 0.0 0.8 1.6 2.4 3.2 4.0 i , collector-to-emitter current (a) total switching losses (mj) c r = ohm t = 150 c v = 480v v = 15v g j cc ge 7 ? 1 10 100 1 10 100 1000 v = 20v t = 125 c ge j o v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c safe operating area www.irf.com 7 d.u.t. 50v l v * c * driver same type as d.u.t.; vc = 80% of vce(max) * note: due to the 50v power supply, pulse width and inductor will increase to obtain rated id. 1000v ' + * $' 8 ' '$' 480f 960v t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e ) ;) * <+ 50v driver* 1000v d.u.t. i c c v l ;) * $' 8 www.irf.com *! " m!/ % ;+ . n ! 6 / % 'm +5 6 o6 / %6'4 %6 *! " m 4!/ % ;+ .6n ! 68$5 6 7;9 o8 94 4# 'i4* 7 ? 4 8$5 6 79 . ) " # lead assignments notes: - d - 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 3x 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087) 3.40 (.133) 3.00 (.118) 3x 0.25 (.010) m c a s 4.30 (.170) 3.70 (.145) - c - 2x 5.50 (.217) 4.50 (.177) 5.50 (.217) 0.25 (.010) 1.40 (.056) 1.00 (.039) 3.65 (.143) 3.55 (.140) d m m b - a - 15.90 (.626) 15.30 (.602) - b - 1 23 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2x 2x 5.45 (.215) 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-247-ac. 1 - gate 2 - drain 3 - source 4 - drain lead assignments hexfet 1 - gate 2 - drain 3 - source 4 - drain igbt 1 - gate 2 - collector 3 - emitter 4 - collector example: as s e mb le d on ww 35, 2000 lot code 5657 with assembly t his is an irfpe30 in the as sembly line "h" 035h logo int ernational rect ifier irfpe30 lot code assembly 56 57 part number dat e code year 0 = 2000 we e k 35 line h note: "p" in assembly line position indicates "lead-free" data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 12/03 note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ |
Price & Availability of IRG4PC30KPBF-15
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