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this is information on a product in full production. april 2014 docid025171 rev 5 1/20 20 stgw40h65fb, stgfw40h65fb, STGWT40H65FB trench gate field-stop igbt, hb series 650 v, 40 a high speed datasheet - production data figure 1. internal schematic diagram features ? maximum junction temperature: t j = 175 c ? high speed switching series ? minimized tail current ? very low saturation voltage: v ce(sat) = 1.6 v (typ.) @ i c = 40 a ? tight parameters distribution ? safe paralleling ? low thermal resistance ? lead free package applications ? photovoltaic inverters ? high frequency converters description this device is an igbt developed using an advanced proprietary trench gate and field-stop structure. the device is part of the new hb series of igbts, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. furthermore, a slightly positive v ce(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. to-247 1 2 3 to-3p 1 2 3 tab 1 1 1 1 2 3 to-3pf c (2, tab) e (3) g (1) table 1. device summary order code marking package packaging stgw40h65fb gw40h65fb to-247 tube stgfw40h65fb gfw40h65fb to-3pf tube STGWT40H65FB gwt40h65fb to-3p tube www.st.com
contents stgw40h65fb, stgfw40h65fb, STGWT40H65FB 2/20 docid025171 rev 5 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
docid025171 rev 5 3/20 stgw40h65fb, stgfw40h65fb, STGWT40H65FB electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-247, to-3p to-3pf v ces collector-emitter voltage (v ge = 0) 650 v i c continuous collector current at t c = 25 c 80 a i c continuous collector current at t c = 100 c 40 a i cp (1) 1. pulse width limited by ma ximum junction temperature. pulsed collector current 160 a v ge gate-emitter voltage 20 v p tot total dissipation at t c = 25 c 283 62.5 w v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; tc = 25 c) 3.5 kv t stg storage temperature range - 55 to 150 c t j operating junction temperature - 55 to 175 c table 3. thermal data symbol parameter value unit to-247 to-3p to-3pf r thjc thermal resistance junction-case 0.53 2.4 c/w r thja thermal resistance junction-ambient 50 c/w
electrical characteristics stgw40h65fb, stgfw40h65fb, STGWT40H65FB 4/20 docid025171 rev 5 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 650 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 40 a 1.6 2.0 v v ge = 15 v, i c = 40 a t j = 125 c 1.7 v ge = 15 v, i c = 40 a t j = 175 c 1.8 v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 5 6 7 v i ces collector cut-off current (v ge = 0) v ce = 650 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 -5412- pf c oes output capacitance - 198 - pf c res reverse transfer capacitance -107-pf q g total gate charge v cc = 520 v, i c = 40 a, v ge = 15 v, see figure 28 -210-nc q ge gate-emitter charge - 39 - nc q gc gate-collector charge - 82 - nc
docid025171 rev 5 5/20 stgw40h65fb, stgfw40h65fb, STGWT40H65FB electrical characteristics table 6. switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v ce = 400 v, i c = 40 a, r g = 5 , v ge = 15 v, see figure 27 -40-ns t r current rise time - 13 - ns (di/dt) on turn-on current slope - 2413 - a/s t d(off) turn-off delay time 142 - ns t f current fall time - 27 - ns e on (1) 1. energy losses include reverse recovery of the external diode. the diode is the same of the co-packed stgw40h65dfb. turn-on switching losses - 498 - j e off (2) 2. turn-off losses include a.lso the tail of the collector current. turn-off switching losses - 363 - j e ts total switching losses - 861 - j t d(on) turn-on delay time v ce = 400 v, i c = 40 a, r g = 5 , v ge = 15 v, t j = 175 c, see figure 27 -38-ns t r current rise time - 14 - ns (di/dt) on turn-on current slope - 2186 - a/s t d(off) turn-off delay time - 141 - ns t f current fall time - 61 - ns e on (1) turn-on switching losses - 1417 - j e off (2) turn-off switching losses - 764 - j e ts total switching losses - 2181 - j
electrical characteristics stgw40h65fb, stgfw40h65fb, STGWT40H65FB 6/20 docid025171 rev 5 2.1 electrical characteristics (curves) figure 2. power dissipation vs. case temperature for to-247 and to-3p figure 3. collector current vs. case temperature for to-247 and to-3p p tot 150 100 0 0 50 t c (c) 75 (w) 25 100 125 150 50 200 250 v ge =15 v, t j = 175 c am16054v1 i c 60 40 20 0 0 50 t c (c) 75 (a) 25 100 80 125 150 v ge = 15 v t j = 175 c am16053v1 figure 4. power dissipation vs. case temperature for to-3pf figure 5. collector current vs. case temperature for to-3pf figure 6. output characteristics (t j = 25c) figure 7. output characteristics (t j = 175c) p tot 30 20 0 0 50 t c (c) 75 (w) 25 100 125 10 40 50 60 v ge =15 v, t j = 175 c am16054v4 i c 30 20 10 0 0 50 t c (c) 75 (a) 25 100 125 v ge =15 v, t j = 175 c am16053v4 i c 120 80 40 0 0 2 v ce (v) 4 (a) 13 11v v ge =15 v 9v am16050v1 i c 120 80 40 0 0 2 v ce (v) 3 (a) 14 7v v ge =15v 9v 11v am16051v1
docid025171 rev 5 7/20 stgw40h65fb, stgfw40h65fb, STGWT40H65FB electrical characteristics figure 8. v ce(sat) vs. junction temperature figure 9. v ce(sat) vs. collector current v ce(sat) 1.9 1.7 1.5 1.3 -50 0 t j (c) (v) 50 100 150 2.3 2.1 v ge = 15v i c = 80a i c = 40a i c = 20a am16055v1 v ce(sat) 1.7 1.5 1.3 1.1 10 30 i c (a) (v) 50 70 2.3 2.1 1.9 v ge = 15v t j = 175c t j = 25c t j = -40c am16056v1 figure 10. collector current vs. switching frequency for to-247 and to-3p figure 11. collector current vs. switching frequency for to-3pf 20 40 60 80 110 ic [a] f [khz] g rectangular current shape, (duty cycle=0.5, v cc = 400v, r =4.7 , v ge = 0/15 v, t j =175c) tc=80 c tc=100 c gipg110420141030fsr 0 5 10 15 110 ic [a] f [khz] g rectangular current shape, (duty cycle=0.5, v cc = 400v, r =4.7 , v ge = 0/15 v, t j =175c) tc=80 c tc=100 c 20 gipg110420141035fsr figure 12. forward bias safe operating area for to-247 and to-3p figure 13. forward bias safe operating area for to-3pf i c 100 10 1 0.1 1 v ce (v) (a) 10 100 10 s 100 s 1 ms single pulse tc= 25c, t j 175c v ge = 15v am16057v1 , & 9 &( 9 $ ?v ?v pv 6lqjohsxovh 7f ?&7 - ??& 9 *( 9 *,3*)65
electrical characteristics stgw40h65fb, stgfw40h65fb, STGWT40H65FB 8/20 docid025171 rev 5 figure 14. transfer characteristics figure 15. normalized v ge(th) vs junction temperature i c 120 80 40 0 6 8 v ge (v) 9 (a) 710 t j = -40c t j =175c t j = 25c v ce = 5 v am16052v1 v ge(th) (norm) 0.8 0.7 0.6 -50 t j (c) 0 50 100 150 0.9 1.0 v ce = v ge , i c = 1 ma am16060v1 figure 16. normalized v (br)ces vs. junction temperature figure 17. capacitance variation v (br)ces (norm) 1.1 1.0 0.9 -50 t j (c) 0 50 100 150 i c = 2 ma am16059v1 c(pf) 1000 100 10 0.1 v ce (v) 110 c ies c oes c res 100 am16071v1 figure 18. gate charge vs. gate-emitter voltage figure 19. switching loss vs collector current v ge (v) 4 2 0 0 q g (nc) 50 100 150 200 6 8 10 12 14 v cc = 520v, i c = 40a i g = 1ma am16061v1 e (j) 1000 600 200 150 v ce (v) 250 350 450 1400 i c = 40a, v ge = 15v r g = 10, t j = 175c e off e on 1800 am16064v1
docid025171 rev 5 9/20 stgw40h65fb, stgfw40h65fb, STGWT40H65FB electrical characteristics figure 20. switching loss vs gate resistance figure 21. switching loss vs temperature e(j) 1000 600 0 r g () 468 t j = 175c, v ge = 15v i c = 40a, v cc = 400v e off 16 e on 20 1800 1400 am16067v2 e (j) 850 450 50 -40 t j (c) -15 10 35 60 1250 v cc = 400v, v ge = 15v r g = 10, i c = 40a 85 e off e on 110 135 1650 am16063v1 figure 22. switching loss vs collector-emitter voltage figure 23. switching times vs. collector current e (j) 1000 600 200 150 v ce (v) 250 350 450 1400 i c = 40a, v ge = 15v r g = 10, t j = 175c e off e on 1800 am16064v1 t(ns) 100 10 10 i c (a) 20 30 40 50 t j = 175c, v ge = 15v r g = 10, v cc = 400v 60 t f t doff 70 t don t r am16066v1 figure 24. switching times vs. gate resistance t(ns) 100 10 0 r g () 468 t j = 175c, v ge = 15v i c = 40a, v cc = 400v t f t doff 16 t don t r 20 am16067v1
electrical characteristics stgw40h65fb, stgfw40h65fb, STGWT40H65FB 10/20 docid025171 rev 5 figure 25. thermal impedance for to-247 and to-3p 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c =tp/t tp t single pulse =0.5 zthto2t_b
docid025171 rev 5 11/20 stgw40h65fb, stgfw40h65fb, STGWT40H65FB electrical characteristics figure 26. thermal impedance for to-3pf zthto2t_a 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k single pulse d=0.5 0.01 0.02 0.05 0.1 0.2
test circuits stgw40h65fb, stgfw40h65fb, STGWT40H65FB 12/20 docid025171 rev 5 3 test circuits figure 27. test circuit for inductive load switching figure 28. gate charge test circuit figure 29. switching waveform am01504v1 am01505v1 am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcross 90% 10%
docid025171 rev 5 13/20 stgw40h65fb, stgfw40h65fb, STGWT40H65FB package mechanical data 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. 4.1 to-247, stgw40h65fb figure 30. to-247 drawing 0075325_g
package mechanical data stgw40h65fb, stgfw40h65fb, STGWT40H65FB 14/20 docid025171 rev 5 table 7. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
docid025171 rev 5 15/20 stgw40h65fb, stgfw40h65fb, STGWT40H65FB package mechanical data 4.2 to-3pf, stgfw40h65fb figure 31. to-3pf drawing 7627132_d
package mechanical data stgw40h65fb, stgfw40h65fb, STGWT40H65FB 16/20 docid025171 rev 5 table 8. to-3pf mechanical data dim. mm min. typ. max. a5.30 5.70 c2.80 3.20 d3.10 3.50 d1 1.80 2.20 e0.80 1.10 f0.65 0.95 f2 1.80 2.20 g10.30 11.50 g1 5.45 h 15.30 15.70 l 9.80 10 10.20 l2 22.80 23.20 l3 26.30 26.70 l4 43.20 44.40 l5 4.30 4.70 l6 24.30 24.70 l7 14.60 15 n1.80 2.20 r3.80 4.20 dia 3.40 3.80
docid025171 rev 5 17/20 stgw40h65fb, stgfw40h65fb, STGWT40H65FB package mechanical data 4.3 to-3p, STGWT40H65FB figure 32. to-3p drawing 8045950_a
package mechanical data stgw40h65fb, stgfw40h65fb, STGWT40H65FB 18/20 docid025171 rev 5 table 9. to-3p mechanical data dim. mm min. typ. max. a4.60 5 a1 1.45 1.50 1.65 a2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 d 19.70 19.90 20.10 d1 13.90 e 15.40 15.80 e1 13.60 e2 9.60 e 5.15 5.45 5.75 l 19.50 20 20.50 l1 3.50 l2 18.20 18.40 18.60 ?p 3.10 3.30 q5 q1 3.80
docid025171 rev 5 19/20 stgw40h65fb, stgfw40h65fb, STGWT40H65FB revision history 5 revision history document table 10. document revision history date revision changes 30-aug-2013 1 initial release. 11-sep-2013 2 document status changed from preliminary to production data. inserted section 2.1: electrical characteristics (curves) . 28-feb-2014 3 updated title and description in cover page. 05-mar-2014 4 updated units in table 6: switching characteristics (inductive load) . 11-apr-2014 5 added part number and references for the device in a to-3pf package
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