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| esmt/emp emh7600 elite semiconductor memory technology inc./ elite micropower inc. publication date : jun. 2009 revision : 2.0 1/17 battery powered, high efficiency synchronous dc/dc boost converter general description emh7600 is designed with high efficiency step up dc/dc converter for portable devices applications. it features with extreme low 26 a quiescent current with no load which is the best fit for extending battery life during the standby mode. the start-up voltage is 0.93v typically with operating voltage down to 0.7v. with synchronous structure, it does not need any external schottky diode. the peak current is limited to 1a for quick turn on. the emh7600 is available in msop-8 package. this product can provide 500ma load current and still maintained at least 70% efficiency and above 90% efficiency when at 100ma load current. the emh7600 is available in msop-8 package, with rohs compliance. typical application fig. 1 features ? single or dual battery operation ? achieve 93% efficiency ? output current up to 500ma ? reference voltage 1.195v ? typical iq 26 a with no load ? no schottky diode needed ? shutdown current < 1 a ? excellent line and load transient response ? on-chip low battery detector ( msop-8 package) applications ? blue-tooth devices ? cellular and smart phones ? personal multi-media player (pmp) ? wireless networking ? hand-held devices with 1 to 3-cell of nimh/nicd batteries ? digital still cameras ? portable applications efficiency vs. load current 0.0% 10.0% 20.0% 30.0% 40.0% 50.0% 60.0% 70.0% 80.0% 90.0% 100.0% 0.01 0.1 1 10 100 1000 output current (ma) efficiency (%) fig. 2
esmt/emp emh7600 elite semiconductor memory technology inc./ elite micropower inc. publication date : jun. 2009 revision : 2.0 2/17 package configuration msop-8 order information EMH7600-00MA08GRR/nrr 00 adjustable output voltage ma08 msop-8 package grr rohs (pb free) rating: -40 to 85c package in tape & reel nrr rohs & halogen free (by request) rating: -40 to 85c package in tape & reel order, mark & packing information package product id vout marking packing msop-8 EMH7600-00MA08GRR 00 (adjustable) 3k units tape & reel pin functions pin name msop-8 pin# function fb 1 connecting to out to get +3.3v output, connecting to gnd to get +5.0v output, using resistor network to set the output voltage from +1.8v to +5.5v. lbi 2 low-battery comparator input. intern ally set at +1.195v+50mv to trip lbo 3 open-drain low battery comparator output. output is low when v lbi is <1.195v. lbo is high impedance during shutdown. ref 4 1.195v output. in case of driving load, need r and c for stability sd 5 shutdown input. ?1? is enabled and ?0?=shutdown gnd 6 ground pin. lx 7 switch pin. must be connected to inductor. out 8 output voltage pin. this also provides bootstrap power to the ic. esmt/emp emh7600 elite semiconductor memory technology inc./ elite micropower inc. publication date : jun. 2009 revision : 2.0 3/17 absolute maximum ratings devices are subjected to failure if they stay above absolute maximum ratings. input voltage ------------------------------------ ? 0.3v to 6v sd, v fb voltages ------------------------------- ? 0.3v to v in lx voltage --------------------------- ? 0.3v to (v in + 0.3v) pmos switch source current (dc) ---------------- 0.5a nmos switch sink current (dc) --------------------- 0.5a esd susceptibility hbm 2kv mm 200v peak switch sink and source current ------------- 1.5a operating temperature range ----- ?40c to 85c junction temperature (notes 1, 3) --------------- 125c storage temperature range -------- ? 65c to 150c lead temperature (soldering, 10 sec) ----------- 260c thermal resistance jc (msop) 56c/w ja (msop) 190c/w electrical characteristics v in =2.0v, v out =3.3v, fb=v out , t a =25 c, unless otherwise specified parameter test condition min typ max unit minimum input voltage 0.7 v operating voltage 1.1 5.5 v start-up voltage rl=3k 0.93 1.00 v start-up voltage tempco -2 mv/ o c output voltage range vin esmt/emp emh7600 elite semiconductor memory technology inc./ elite micropower inc. publication date : jun. 2009 revision : 2.0 5/17 typical performance characteristics vin=2.4v, vout=3.3v unle ss otherwise specified efficiency vs output current switching frequency vs input voltage efficiency vs. load current 0.0% 10.0% 20.0% 30.0% 40.0% 50.0% 60.0% 70.0% 80.0% 90.0% 100.0% 0.01 0.1 1 10 100 1000 output current (ma) efficiency (%) switching frequency vs. supply voltage when iout=100ma 0 20 40 60 80 100 120 140 160 180 200 220 11.522.53 supply voltage (v) switching frequency fosc (khz) ripple voltage vs output current turning point between ccm and dcm ripple voltage 0 20 40 60 80 100 120 140 160 180 200 220 240 260 0 50 100 150 200 250 300 350 400 450 500 550 600 output current (ma) ripple voltage (mv) turning point between ccm & dcm 0 50 100 150 200 250 300 350 400 0.511.522.533.5 input voltage (v) ccm/dcm boundary output current (ma) maximum output current vs input voltage no load battery current vs input voltage maximum output current vs. input voltage 0 100 200 300 400 500 600 700 800 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 input voltage (v) maximum output current (ma) no-load battery current vs. input battery 0 20 40 60 80 100 120 140 160 180 200 220 00.511.522.533.5 input battery voltage (v) input battery current (ua) esmt/emp emh7600 elite semiconductor memory technology inc./ elite micropower inc. publication date : jun. 2009 revision : 2.0 6/17 typical performance characteristics vin=2.4v, vout=3.3v unle ss otherwise specified lx switching waveform at no load r ds(on) vs input voltage ron vs. input voltage 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 input voltage (v) ron () nmos pmos lx switching waveform at heavy load exiting shutdown load transient response vref voltage vs temperature vref vs. temperature 1.186 1.187 1.188 1.189 1.19 1.191 1.192 1.193 1.194 1.195 -60 -40 -20 0 20 40 60 80 100 120 140 160 temperature () reference v oltage (v ) esmt/emp emh7600 elite semiconductor memory technology inc./ elite micropower inc. publication date : jun. 2009 revision : 2.0 7/17 typical performance characteristics vin=2.4v, vout=3.3v unless otherwise specified switch ron vs temperature ripple voltage vs output current when vin=1.2v switch resistance vs. temperature when vout=3.3v ilx=100ma 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 temperature () resistance ( ) nmos pmos ripple voltage 0 20 40 60 80 100 120 140 160 180 200 220 240 260 0 50 100 150 200 output current (ma) ripple voltage (mv) line transient response shutdown current vs input voltage shutdown current vs. supply voltage 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 11.522.533.544.555.5 supply voltage (v) shutdown current (a) efficiency vs load current at vin=1.2v efficiency vs. load current 0.0% 10.0% 20.0% 30.0% 40.0% 50.0% 60.0% 70.0% 80.0% 90.0% 100.0% 0.01 0.1 1 10 100 1000 output current (ma) efficiency (%) esmt/emp emh7600 elite semiconductor memory technology inc./ elite micropower inc. publication date : jun. 2009 revision : 2.0 8/17 functional block diagram emh7600 block diagram esmt/emp emh7600 elite semiconductor memory technology inc./ elite micropower inc. publication date : jun. 2009 revision : 2.0 9/17 applications overview emp7600 is high effi ciency, step-up dc-dc converters, designed to feature a built-in synchronous rectifier, which reduces size and cost by eliminating the need for an external schottky diode. the start-up voltage is as low as 0.93v and it operates with an input voltage down to 0.7v. quiescent supply current is only 26 a.the internal p-mosfet on resistance is typically 0.4 to improve overall efficiency by minimizing ac losses. the output voltage can be easily set by two external resistors from 1.8v to 5.5v, connecting fb to out to get 3.3v, or connecting to gnd to get 5.0v. the current limit is 1a still it can reliably provide up to 500ma load current and still maintained a decent efficiency. pfm control scheme the key feature of the design is to apply a unique minimum off-time, constant on-time and current-limited pulse frequency modulation (pfm) control scheme (see block diagram) with the ultra-low quiescent current. the peak current of the internal n mosfet power switch can be fixed at 1.0a. the switching frequency can be up to 200khz depending on the loading current. the minimum off-time is 1 s and the maximum on-time is 4 s. synchronous rectification with the internal synchronous rectifier, it eliminates the need for an external schottky diode. this saves the cost and board space. during the cycle of off-time, p-mosfet turns on and shunts n- mosfet. due to the low turn-on resistance of mosfet, synchronous rectifier significantly improves efficiency without an additional external schottky diode. thus, the conversion efficiency can be as high as 93%. reference voltage the reference voltage (ref) is nominally 1.195v with excellent temperature performance. in addition, ref pin can source up to 10 a to external circuit with good load regulation (<10mv). a bypass capacitor of 0.1 f in series with 6.8k resistor is required for proper operation and good stability. if no loading requirement, this r and c are not required at all. shutdown the device is in shutdown mode when sd v is low. at shutdown mode, the current can flow from battery to output due to body diode of the p-mosfet. v out falls to approximately vin-0.6v and lx remains in high impedance. the cload and load current at out determine the rate of how v out decays. shutdown can be pulled as high as 6v regardless of the voltage at out. esmt/emp emh7600 elite semiconductor memory technology inc./ elite micropower inc. publication date : jun. 2009 revision : 2.0 10/17 applications (continued) selecting the output voltage v out can be simply set to 3.3v/5.0v by connecting fb pin to out/gnd due to the use of internal resistor divider in the ic. in order to adjust output voltage, a resistor divider is connected to v out , fb, gnd. t h e vout can be calculated by the following equation: r5=r6 [(v out / v ref )-1] ..............................(1) where v ref =1.195v and v out is ranging from 1.8v to 5.5v. the recommended r6 is 240k . component selection 1. inductor selection an inductor value of 22 h performs well in most applications. the device also works with inductors in the 10 h to 47 h range. an inductor with higher peak inductor current tends a higher output voltage ripple (i peak output filter capacitor esr). the inductor?s dc resistance significantly affects efficiency. we can calculate the maximum output current as follows: ? ? ? ? ? ? ? ? = ) ( ) ( l v v t i v v max i in out off lim out in out 2 ...........(2) where i out (max) =max. output current in amps v in =input voltage l = inductor value in h = efficiency (typically 0.9 ) t off = lx switch? off-time in s i lim =1.0a 2. capacitor selection the output ripple voltage relates with the peak inductor current and the output capacitor?s esr. besides output ripple voltage, the output ripple current also needs to be concerned. a filter capacitor with low esr is helpful to the efficiency and steady state output current. a smaller capacitor (down to 47 f with higher esr) is acceptable for light loads or in applications of which can tolerate higher output ripple. 3. pcb layout and grounding since emh7600?s switching frequency can range up to 200khz, it is sensitive to how pcb is layout. pcb layout is important for minimizing ground bounce and noise. the gnd pin should be placed close to the ground plane. keep the ic?s gnd pin and the ground leads of the input and output filter capacitors as short as possible. in addition, keep all connections to the fb and lx pins as short as possible. in particular, in case of using external feedback resistors, locate them as close to the fb as possible. to maximize output power and efficiency and minimize output ripple voltage, use a ground plane right under the soldered ic. ripple voltage reduction the output ripple voltage can b e significant improved by using two or three parallel output capacitors. the addition of an extra input capacitor al so results in a stable output voltage. esmt/emp emh7600 elite semiconductor memory technology inc./ elite micropower inc. publication date : jun. 2009 revision : 2.0 11/17 application (continued) application circuit for v out =5v application circuit for v out =3.3v esmt/emp emh7600 elite semiconductor memory technology inc./ elite micropower inc. publication date : jun. 2009 revision : 2.0 12/17 application (continued) application circuit for adjustable v out using formula (r5+r6)/r6*1.195 esmt/emp emh7600 elite semiconductor memory technology inc./ elite micropower inc. publication date : jun. 2009 revision : 2.0 13/17 typical schematic for pcb layout esmt/emp emh7600 elite semiconductor memory technology inc./ elite micropower inc. publication date : jun. 2009 revision : 2.0 14/17 package information msop-8 plastic package o symbpls min. nom. max. a 1.1 a1 0 0.15 a2 0.75 0.85 0.95 d 3.00 bsc e 4.90 bsc e1 3.00 bsc l 0.4 0.6 0.8 l1 0.95 bsc 0 8 unit: mm esmt/emp emh7600 elite semiconductor memory technology inc./ elite micropower inc. publication date : jun. 2009 revision : 2.0 15/17 notice order, mark & packing information package product id vout marking packing msop-8 EMH7600-00MA08GRR 00 (adjustable) h100 date code 3k units tape & reel msop-8 EMH7600-00MA08GRR 00 (adjustable) h7600 date code 3k units tape & reel msop-8 EMH7600-00MA08GRR 00 (adjustable) emp h7600 date code 3k units tape & reel esmt/emp emh7600 elite semiconductor memory technology inc./ elite micropower inc. publication date : jun. 2009 revision : 2.0 16/17 revision history revision date description 2.0 2009.06.05 emp transferred from version 1.1 esmt/emp emh7600 elite semiconductor memory technology inc./ elite micropower inc. publication date : jun. 2009 revision : 2.0 17/17 important notice all rights reserved. no part of this document may be repr oduced or duplicated in any form or by any means without the prior permission of esmt. the contents contained in this docume nt are believed to be accurate at the time of publication. esmt assumes no responsibility for any error in this document, and reserves the right to change the products or specification in this document without notice. the information contained herein is pr esented only as a guide or examples for the application of our products. no responsibility is assumed by esmt for any infringement of patents, copyrights, or other intellect ual property rights of third parties which may result from its use. no license, either express , implied or otherwise, is granted un der any patents, copyrights or other intellectual property righ ts of esmt or others. any semiconductor devices may have in herently a certain rate of failure. to minimize risks associated with cu stomer's application, adequate design and operating safeguards against inju ry, damage, or loss from such failure, should be provided by the customer when making application designs. esmt's products are not authorized for use in critical applications such as, but not limited to, life support devices or system, where failure or abnormal operation may directly affect human lives or cause physical injury or property damage. if products described here are to be used for such kinds of application, purchaser must do its own quality assurance testing appropriate to such applications. |
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