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Datasheet File OCR Text: |
reverse voltage 45v forward current 12a features 3 low thermal resistance 3 low forward voltage drop,low power loss 3 compact outline design 3 excellent anti-humidity 3 high current capability 3 high forward surge capability internal schematic diagram 3 rohs compliance mechanical data case: plastic body terminals: sn plated leads typical applications 3 for use in solar cell junction box as bypass diodes for protection, using dc forward current dimensions in millimeters without reverse bias. maximum ratings & electrical characteristics ratings at 25 ambient temperature unless otherwise specified . symbol unit v rrm v v rwm v i f i fsm i rrm (max) ma v fm (max) v r jc /w tstg v iso v g 55 to+150 6000 23 forward voltage drop i f =12a,lnst measurement junction temperature in dc forward current without reverse bias mass (typical value) storage temperature a repetitive peak reverse current (v r =v rrm ) 45 12 dc output current (tc=145 ,with special heatsink) s urge forward current 1cycle,60hz,peak value,non- titi MSB12A45S3L working peak reverse voltage isolation voltage ac. 1minute operating junction temperature range(vr ? 80%vrrm) typical thermal resistance (junction to case,with heatsink) b ypass di o d e m o d u l e f or s o l arce ll MSB12A45S3L 45 400 (schottky barrier diode type) parameter maximum repetitive peak reverse voltage t j 0.8 0.43 1.2 55 to+125 200 outline drawing 1"(&
MSB12A45S3L ratings & c haracteristics c urves (ta=25 unless otherwise noted ) notes: mounted on junction box using dc forward current 5zqjdbm'psxbse$ibsbdufsjtujdt *otuboubofpvt'psxbse7pmubhf 7 *otuboubofpvt'psxbse $vssfou " 5k 5k 5k 5zqjdbm3fwfstf$ibsbdufsjtujdt & & & & & & & 1fsdfoupg3bufe1fbl3fwfstf7pmubhf *otuboubofpvt3fwfstf $vssfou n" 5k 5k 5k 'psxbse$vssfou%fsbujoh $btf5fnqfsbuvsf %$'psxbse$vssfou " xjuiifbutjol *'" 7'7 5b 5k 5zqjdbm 5$4&/4*/(10*/5 1"(& |
Price & Availability of MSB12A45S3L
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