SSFD6046 feathers: ? advanced trench process technology ? a valanche energy, 100% test ? fully characterized avalanche voltage and current description: the SSFD6046 is a new generation of middle voltage n?channel enhancement mode trench power mosfet. this new technology increases the device reliability and electrical parameter repeatability. SSFD6046 is assembled in high reliability and qualified assembly house. top view (to252) id =12a bv=60v rdson=50m ? max. SSFD6046 marking and pin assignment absolute maximum ratings parameter max. units i d @t 25 ? c continuous vgs@10v c = drain current, 12 i d @t c =100 ? c continuous drain current,vgs@10v 9 i dm pulsed drain current 30 a power dissip ation 20 w p d @t c ? c l r 0.12 w =25 inear derating facto / ? c v gs g ate-to-source voltage 20 v e as single 8 mj pulse avalanche energy e ar repetitive avalanche energy tbd t j t st e ?55 to +1 75 ? c stg operating junction and orage temperature rang hermal resistance parameter min. typ. max. units t r jc ju e nction-to-cas ? ? 7.5 r ja j t unction-to-ambien ? ? 60 ? c/w lectrical characteristics @tj=25 ? c (unless otherwise specified) its test conditions e parameter min. typ. max. un bv ss drain-to-sou wn voltage v d rce breakdo 60 ? ? v gs =0v,i d =250 a r ds(on) static drain-to-source on-resistance ? 46 50 m ? v gs =10v,i d =12a v gs(th) gate threshold voltage 1.0 3.0 v v ds =v gs ,i d =250 a g fs f 15 orward transconductance ? ? s v ds =5v,i d =12a ? ? 1 v ds =60v,v gs =0v i dss drain-to-source leakage current 10 a v gs ? c ? ? v ds =60v, =0v,t j =55 gate-to-source forward leakage 100 ? ? v gs =20v i gss gate-to-source reverse leakage ? ? -100 na v gs =-20v ? silikron semiconductor corporation 2010.09.01 version: 1. 1 page 1of4
SSFD6046 q g total gate charge ? 7.5 ? q gs ga e te-to-source charg ? 1.2 ? q gd ga e nc te-to-drain("miller") charg ? 2 ? i d =12 a v dd =30v v gs =10v t d(on) turn-on delay time ? 4 .5 ? t r rise time ? 3.5 ? ? silikron semiconductor corporation 2010.09.01 version: 1. 1 page 2of4 t d turn ime (off) -off delay t ? 16 ? t f fall time ? 2 ? ns i d = v v dd =30v 2a ,r l =2.5 ? r g =3 ? gs =10v c input nce 450 iss capacita ? ? c oss o utput capacitance ? 60 ? c rss reve nce pf rse transfer capacita ? 25 ? v gs =0v v ds =30v f=1.0mhz ource-drain ratings and characteristics typ. max. units test conditions s parameter min. i s continu urrent ous source c (body diode) ? ? 12 i sm puls rent ? ? 30 a mosfet integral reverse p ed source cur (body diode) symbol showing the -n junction diode. v sd di e v gs ode forward voltag ? ? 1 t j =25 ? c,i s =1a ,v =0v t rr reverse recovery time ? 25 ? ns q rr r d everse recovery charge ? 30 ? nc t j =25 ? c,i f =12a i/dt=100a/ s t on forward turn-on time in trinsic turn-on time is ne ble (turn-on is ld) gligi dominated by ls + notes: rep etitive rating; pulse width limited by max junction temperature. ??? starting tj = 25c test condition: l =0.1mh, vdd = 40v,id=10a pulse width 300 s, duty cycle 1.5% ; rg = 25
SSFD6046 ? silikron semiconductor corporation 2010.09.01 version: 1. 1 page 3of4
SSFD6046 mechanical dat a to-252e-2-m package information otes e inclusive of plating ash and gate burrs. mold flash at the non-lead sides should be less than 6 mils. ed inch dimensions are not necessarily exact. dimensions in millimeter s ? silikron semiconductor corporation 2010.09.01 version: 1. 1 page 4of4 n 1. dimensions ar 2. package body sizes exclude mold fl 3. dimension l is measured in gauge plane. 4. controlling dimension is millimeter, convert
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