s mhop microelectronics c orp. a stu/d30n15 symbol v ds v gs i dm a i d units parameter 150 v v 20 gate-source voltage drain-source voltage product summary v dss i d r ds(on) (m ) typ 150v 22a 62 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. to-252 and to-251 package. n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous -pulsed a a www.samhop.com.tw may,30,2014 1 details are subject to change without notice. t c =25 c g s stu series to-252aa (d-pak) w p d c -55 to 175 t c =25 c thermal characteristics maximum power dissipation operating junction and storage temperature range t j , t stg 50 c/w thermal resistance, junction-to-ambient r ja 2 c/w thermal resistance, junction-to-case r jc t c =70 c a t c =70 c w 22 64 75 green product 18.4 52.5 ver 1.1 std series to-251 (i-pak) g s d
symbol min typ max units bv dss 150 v 1 i gss 100 na v gs(th) v 62 g fs s c iss 2387 pf c oss 160 pf c rss 88 pf q g 56 nc 45 66 17 t d(on) 26.5 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =75v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =11a v ds =10v , i d =11a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =120v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 72 b f=1.0mhz b stu/d30n15 www.samhop.com.tw may,30,2014 2 v sd nc q gs nc q gd 5.2 9.1 gate-drain charge gate-source charge diode forward voltage v ds =75v,i d =11a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =5a 0.77 1.3 v notes v ds =75v,i d =11a,v gs =10v a.pulse test:pulse width < 300us, duty cycle < 2%. b.guaranteed by design, not subject to production testing. _ _ 234 28 ver 1.1
stu/d30n15 ver 1.1 www.samhop.com.tw may,30,2014 3 tj( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature 45 36 27 18 0 0 1 2 3 4 5 v gs =10v 20 16 12 8 4 0 0 1 6 5 4 3 2 tj=125 c -55 c 25 c 120 100 80 60 40 20 1 91827 45 2.5 2.2 1.9 1.6 1.3 1.0 0 0 100 75 25 50 125 150 v gs =10v i d =11a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 9 v gs =10v 36 1 v gs =5v v gs =6v v gs =7v
stu/d30n15 ver 1.1 www.samhop.com.tw may,30,2014 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 110 100 1 10 100 300 vds=75v,id=1a vgs=10v td(on) tr td(off ) tf 180 150 120 90 60 30 0 10 0 125 c 75 c 25 c i d =11a 10 1 20 ciss coss crss 3000 2500 2000 1500 1000 500 0 10 15 20 25 30 0 5 0.1 1 10 100 100 10 1 0.3 r ds (o n ) limi t v gs =10v single pulse t a =25 c dc 1 0 m s 1ms 100 u s 10 u s 10 8 6 4 2 0 0 7 14 21 28 v ds =75v i d =11a 8 6 4 2 0 0.25 0.50 0.75 1.00 1.25 25 c 125 c 75 c
t p v (br )dss i as figure 13b. stu/d30n15 ver 1.1 www.samhop.com.tw may,30,2014 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 110 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r j ja (t)=r (t) * r j ja 2. r j ja =s ee datas heet 3. t jm- t a =p dm *r j ja (t) 4. duty cycle, d=t 1 /t 2 single pulse unclamped inductive waveforms figure 13a. unclamped inductive test circuit r g i as 0.01 t p d.u.t l v ds + - dd 20v v
www.samhop.com.tw 6 package outline dimensions to-251 b3 d e d1 12 3 l4 e l5 h b4 b2 b e1 a c2 l c symbol millimeters min max e 6.350 6.731 l 3.700 4.400 l4 0.698 ref l5 0.972 1.226 5.970 d6.223 h 9.670 11.450 b 0.630 0.850 b2 0.760 1.140 4.950 b3 5.460 b4 0.450 0.550 e 2.286 bsc a 2.180 2.390 c 0.400 0.610 0.400 0.610 c2 d1 5.100 e1 4.318 ver 1.1 may,30,2014 stu/d30n15
stu/d30n15 ver 1.1 www.samhop.com.tw may,30,2014 7 to-252 l3 b2 b l2 l a1 l1 a max min c c2 d d1 e h e1 millimeters symbols e b3 e b3 h l3 d l4 b2 b e 1 2 3 a c2 c e1 d1 l1 a1 l2 detail "a" detail "a" 2.200 2.380 0.000 0.127 0.635 0.889 0.762 1.143 5.200 5.460 0.450 0.600 0.450 0.580 6.000 6.223 5.210 2.286 bsc 6.400 6.731 4.318 9.400 10.400 l4 1.400 1.770 2.743 ref l 0.508 bsc 0.890 1.270 0.640 1.010 0 10 4.900 5.380
stu/d30n15 ver 1.1 www.samhop.com.tw may,30,2014 8 to-251 tube/to-252 tape and reel data to-252 carrier tape to-252 reel unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 - 0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 - 0 2.2 ? 13.0 + 0.5 - 0.2 10.6 2.0 2 0.5 " a" to-251 tube 540 1.5 + 2~ ? 3.0 4.5 5.5 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 d1 a0 d0 p0 e1 e2 p1 p2 b0 t k0 feed direction t n m w g v r e 2 0.1 2 0.1 s k h
www.samhop.com.tw 9 top marking definition to-252 xxxxxx product no. samhop logo wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) stu30n15 smc internal code no. (a,b,c...z) ver 1.1 stu/d30n15 may,30,2014
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