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this is information on a product in full production. january 2014 docid024850 rev 3 1/22 stb10n95k5, stf10n95k5, stp10n95k5, STW10N95K5 n-channel 950 v, 0.65 typ., 8 a zener-protected supermesh? 5 power mosfets in d 2 pak, to-220fp, to-220 and to-247 datasheet - production data figure 1. internal schematic diagram features ? worldwide best fom (figure of merit) ? ultra low gate charge ? 100% avalanche tested ? zener-protected applications ? switching applications description these n-channel zener-protected power mosfets are designed using st?s revolutionary avalanche-rugged very high voltage supermesh? 5 technology, based on an innovative proprietary vertical structure. the result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency. '7$% * 6 am01476v1 to-220 to-220fp 1 2 3 1 2 3 tab 1 2 3 to-247 1 3 tab d pak 2 order codes v ds r ds(on) max i d p tot stb10n95k5 950 v 0.8 8 a 130 w stf10n95k5 30 w stp10n95k5 130 w STW10N95K5 table 1. device summary order codes marking package packaging stb10n95k5 10n95k5 d 2 pak tape and reel stf10n95k5 to-220fp tube stp10n95k5 to-220 STW10N95K5 to-247 www.st.com
contents stb10n95k5, stf10n95k5, stp10n95k5, STW10N95K5 2/22 docid024850 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
docid024850 rev 3 3/22 stb10n95k5, stf10n95k5, stp10n95k5, STW10N95K5 electrical ratings 22 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220fp d 2 pak, to-220, to-247 v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 8 (1) 1. limited by maximum junction temperature. 8a i d drain current (continuous) at t c = 100 c 5 (1) 5a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 32 a p tot total dissipation at t c = 25 c 30 130 w i ar max current during repetitive or single pulse avalanche 2.5 a e as single pulse avalanche energy (starting t j = 25 c, i d =i as , v dd = 50 v) 122 mj dv/dt (3) 3. i sd 8 a, di/dt 100 a/ s, v ds(peak) v (br)dss. peak diode recovery voltage slope 4.5 v/ns dv/dt (4) 4. v sd 760 v mosfet dv/dt ruggedness 50 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s; t c =25 c) 2500 v t j t stg operating junction temperature storage temperature - 55 to 150 c table 3. thermal data symbol parameter value unit to-220fp d 2 pak to-220, to-247 r thj-case thermal resistance junction-case max 4.2 0.96 c/w r thj-amb thermal resistance junction-amb max 62.5 62.5 c/w rt hj-pcb (1) 1. when mounted on 1 inch2 fr-4, 2 oz copper board thermal resistance junction-pcb max 30 c/w
electrical characteristics stb10n95k5, stf10n95k5, stp10n95k5, STW10N95K5 4/22 docid024850 rev 3 2 electrical characteristics (tcase =25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 950 v i dss zero gate voltage, v gs = 0 drain current v ds = 950 v 1 a v ds = 950 v, t c =125 c 50 a i gss gate-body leakage current v gs = 20 v; v ds =0 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 345v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 4 a 0.65 0.8 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =100 v, f=1 mhz, v gs =0 -630- pf c oss output capacitance - 50 - pf c rss reverse transfer capacitance -0.6- pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v gs = 0, v ds = 0 to 760 v -77-pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -28-pf r g intrinsic gate resistance f = 1 mhz open drain - 6.5 - q g total gate charge v dd = 760 v, i d = 8 a v gs =10 v (see figure 20 ) -22-nc q gs gate-source charge - 5 - nc q gd gate-drain charge - 15 - nc
docid024850 rev 3 5/22 stb10n95k5, stf10n95k5, stp10n95k5, STW10N95K5 electrical characteristics 22 the built-in back-to-back zener diodes have been specifically designed to enhance not only the device?s esd capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. in this respect, the zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. the integrated zener diodes thus eliminate the need for external components. table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) turn-on delay time v dd = 475 v, i d = 4 a, r g = 4.7 , v gs = 10 v (see figure 19) -22 -ns t r rise time - 14 - ns t d(off) turn-off-delay time - 51 - ns t f fall time - 15 - ns table 7. source drain diode symbol parameter test conditions min. typ. max unit i sd source-drain current - 8 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 32 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 8 a, v gs = 0 - 1.5 v t rr reverse recovery time i sd = 8 a, di/dt = 100 a/ s v dd = 60 v (see figure 21) - 404 ns q rr reverse recovery charge - 5.2 c i rrm reverse recovery current - 25.5 a t rr reverse recovery time i sd = 8 a, di/dt = 100 a/ s v dd = 60 v t j = 150 c (see figure 21) - 596 ns q rr reverse recovery charge - 6.9 c i rrm reverse recovery current - 23 a table 8. gate-source zener diode symbol parameter test conditions min typ. max. unit v (br)gso gate-source breakdown voltage i gs = 1ma, i d =0 30 - - v
electrical characteristics stb10n95k5, stf10n95k5, stp10n95k5, STW10N95K5 6/22 docid024850 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area for d 2 pak and to-220 figure 3. thermal impedance for d 2 pak and to-220 i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10 s 100 s 1ms 10ms 0.01 tj=150c tc = 2 5 c single pulse am16133v1 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10 s 100 s 1ms 10ms 0.01 tj=150c tc = 2 5 c single pulse am16134v1 figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10 s 100 s 1ms 10ms 0.01 tj=150c tc = 2 5 c single pulse am16135v1
docid024850 rev 3 7/22 stb10n95k5, stf10n95k5, stp10n95k5, STW10N95K5 electrical characteristics 22 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on-resistance figure 12. capacitance variations figure 13. output capacitance stored energy i d 12 4 0 0 4 v ds (v) 8 (a) 12 6v v gs =10, 11v 8 16 16 7v 8v 9v am16136v1 i d 16 8 0 5 7 v gs (v) 9 (a) 6 8 10 4 12 v ds =20v am16137v1 v gs 6 4 2 0 0 10 q g (nc) (v) 8 15 20 10 v dd =760v i d =8a 200 0 400 600 v ds 5 v ds (v) am16138v1 r ds(on) 0.8 0.4 0 2 4 i d (a) ( ) 3 5 1.2 v gs =10v 6 1.6 7 am16139v1 c 100 10 1 0.1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 1000 am16140v1 e oss 4 2 0 0 v ds (v) (j) 400 200 6 600 8 10 800 am16141v1
electrical characteristics stb10n95k5, stf10n95k5, stp10n95k5, STW10N95K5 8/22 docid024850 rev 3 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on-resistance vs temperature figure 16. normalized v ds vs temperature figure 17. source-drain diode forward characteristics v gs(th) 0.6 0.4 0.2 0 -100 0 t j (c) (norm) -50 0.8 50 150 i d =100a 100 1 1.2 am16142v1 r ds(on) 2 1 0 t j (c) (norm) 0.5 1.5 2.5 i d =4a v gs =10v -100 0 -50 50 150 100 am16143v1 v ds t j (c) (norm) 0.85 0.9 0.95 1 1.05 1.1 i d =1ma -100 0 -50 50 150 100 am16145v1 v sd 2 4 i sd (a) (v) 3 5 6 0.5 0.6 0.7 0.8 t j =-50c t j =150c t j =25c 0.9 7 am16144v1 figure 18. maximum avalanche energy vs starting t j e as 0 50 t j (c) (mj) 25 125 75 100 0 20 40 60 80 100 i d =2.5 a v dd =50 v 120 am16146v1
docid024850 rev 3 9/22 stb10n95k5, stf10n95k5, stp10n95k5, STW10N95K5 test circuits 22 3 test circuits figure 19. switching times test circuit for resistive load figure 20. gate charge test circuit figure 21. test circuit for inductive load switching and diode recovery times figure 22. unclamped inductive load test circuit figure 23. unclamped inductive waveform figure 24. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data stb10n95k5, stf10n95k5, stp10n95k5, STW10N95K5 10/22 docid024850 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid024850 rev 3 11/22 stb10n95k5, stf10n95k5, stp10n95k5, STW10N95K5 package mechanical data 22 figure 25. d2pak (to-263) drawing table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 0079457_t
package mechanical data stb10n95k5, stf10n95k5, stp10n95k5, STW10N95K5 12/22 docid024850 rev 3 figure 26. d2pak footprint (a) j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8 a. all dimension are in millimeters table 9. d2pak (to-263) mechanical data (continued) dim. mm min. typ. max. 16.90 12.20 9.75 3.50 5.08 1.60 footprint
docid024850 rev 3 13/22 stb10n95k5, stf10n95k5, stp10n95k5, STW10N95K5 package mechanical data 22 figure 27. to-220fp drawing 7012510_rev_k_b
package mechanical data stb10n95k5, stf10n95k5, stp10n95k5, STW10N95K5 14/22 docid024850 rev 3 table 10. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
docid024850 rev 3 15/22 stb10n95k5, stf10n95k5, stp10n95k5, STW10N95K5 package mechanical data 22 figure 28. to-220 type a drawing bw\sh$b5hyb7
package mechanical data stb10n95k5, stf10n95k5, stp10n95k5, STW10N95K5 16/22 docid024850 rev 3 table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
docid024850 rev 3 17/22 stb10n95k5, stf10n95k5, stp10n95k5, STW10N95K5 package mechanical data 22 figure 29. to-247 drawing table 12. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 0075325_g
package mechanical data stb10n95k5, stf10n95k5, stp10n95k5, STW10N95K5 18/22 docid024850 rev 3 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70 table 12. to-247 mechanical data (continued) dim. mm. min. typ. max.
docid024850 rev 3 19/22 stb10n95k5, stf10n95k5, stp10n95k5, STW10N95K5 packaging mechanical data 22 5 packaging mechanical data figure 30. tape p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape
packaging mechanical data stb10n95k5, stf10n95k5, stp10n95k5, STW10N95K5 20/22 docid024850 rev 3 figure 31. reel table 13. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
docid024850 rev 3 21/22 stb10n95k5, stf10n95k5, stp10n95k5, STW10N95K5 revision history 22 6 revision history table 14. document revision history date revision changes 24-jun-2013 1 first release. 07-oct-2013 2 ? added: d 2 pak package ? modified: note 4 in table 2 ? added: thermal resistance junction-pcb max parameter ? modified: typical values in table 5 , 6 and 7 ? added: section 2.1: electrical characteristics (curves) ? updated: section 4: package mechanical data ? minor text changes 29-jan-2014 3 ? datasheet status promoted from preliminary data to production data ? minor text changes
stb10n95k5, stf10n95k5, stp10n95k5, STW10N95K5 22/22 docid024850 rev 3 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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