advanced power p-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss -30v lower on-resistance r ds(on) 8.2m fast switching characteristic i d -14a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 50 /w data and specifications subject to change without notice 200807112 1 ap4405gm rating -30 + 20 -14 parameter drain-source voltage gate-source voltage continuous drain current 3 continuous drain current 3 -11.3 pulsed drain current 1 -50 rohs-compliat product thermal data parameter total power dissipation 2.5 -55 to 150 operating junction temperature range -55 to 150 storage temperature range advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the so-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. s s s g d d d d so-8 g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-13a - - 8.2 m ? ?
ap4405gm fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 50 001122 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c - 10 v - 7.0 v - 6.0 v - 5.0 v v g = - 4.0 v 0 10 20 30 40 50 001122 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 150 o c - 10 v - 7.0 v - 6.0 v - 5.0 v v g = - 4.0 v 6 8 10 12 14 246810 -v gs , gate-to-source voltage (v) r ds(on) (m
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 ap4405gm t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0 1000 2000 3000 4000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 2 4 6 8 10 12 14 0 20406080100 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -13a v ds = -24v 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =125 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
|
