EMH9 / umh9n / imh9a transistors general purpose (dual digital transistors) EMH9 / umh9n / imh9a z z z z features 1) two dtc114ys chips in a emt or umt or smt package. 2) mounting possible with emt3 or umt3 or smt3 automatic mounting machines. 3) transistor elements are independent, eliminating interference. 4) mounting cost and area can be cut in half. z z z z structure epitaxial planar type npn silicon transistor (built-in resistor type) the following characteristics apply to both dtr 1 and dtr 2 . z z z z equivalent circuit r 1 =10k ? r 2 =47k ? r 1 =10k ? r 2 =47k ? dtr 2 dtr 1 (3) (2) (1) (4) (5) (6) r 1 r 2 r 2 r 1 dtr 2 dtr 1 (4) (5) (6) (3) (2) (1) r 1 r 2 r 2 r 1 EMH9 / umh9n imh9a z z z z packaging specifications umh9n EMH9 type imh9a tn 3000 t2r 8000 ?? ? ?? ? t110 3000 package code basic ordering unit (pieces) taping z z z z external dimensions (units : mm) rohm : emt6 rohm : smt6 eiaj : sc-74 EMH9 imh9a rohm : umt6 eiaj : sc-88 umh9n abbreviated symbol : h9 abbreviated symbol : h9 abbreviated symbol : h9 each lead has same dimensions 0.22 1.2 1.6 ( 1 ) ( 2 ) ( 5 ) ( 3 ) ( 6 ) ( 4 ) 0.13 0.5 0.5 0.5 1.0 1.6 each lead has same dimensions 0to0.1 ( 6 ) 2.0 1.3 0.9 0.15 0.7 0.1min. 2.1 0.65 0.2 1.25 ( 1 ) 0.65 ( 4 ) ( 3 ) ( 2 ) ( 5 ) each lead has same dimensions ( 6 ) ( 5 ) ( 4 ) 0.3to0.6 0.15 0.3 1.1 0.8 0to0.1 ( 3 ) 2.8 1.6 1.9 2.9 0.95 ( 2 ) 0.95 ( 1 )
EMH9 / umh9n / imh9a transistors z z z z absolute maximum ratings (ta = 25 c) supply voltage input voltage output current junction temperature storage temperature power dissipation ? 1 120mw per element must not be exceeded. ? 2 200mw per element must not be exceeded. parameter symbol limits unit v cc 50 v v v in ? 6 40 i o 70 ma i c (max.) 100 tstg ? 55~ + 150 150 c c pd EMH9,umh9n 150 (total) mw imh9a 300 (total) ? 2 ? 1 tj z z z z electrical characteristics (ta = 25 c) parameter symbol i i v i (off) v i (on) v o (on) i o (off) r 1 g i r 2 /r 1 min. ? 1.4 ? ? ? 7 68 3.7 ? ? ? ? 10 ? 4.7 0.3 ? 0.3 0.1 0.88 0.5 13 ? 5.7 v v cc =5v, i o =100 a v o =0.3v, i o =1ma i o /i i =5ma/0.25ma v i =5v v cc =50v, v i =0v ? v o =5v, i o =5ma v ma a k ? ? ?? typ. max. unit conditions f t ? 250 ? v ce =10ma, i e = ? 5ma, f=100mhz ? mhz ? transition frequency of the device input voltage output voltage input current output current input resistance dc current gain transition frequency resistance ratio z z z z electrical characteristic curves input voltage : v i (on) (v) output current : i o (a) 100 200 500 1m 2m 5m 10m 20m 50m 100m 100 50 20 10 5 2 1 500m 200m 100m v o =0.3v ta= ? 40 c 25 c 100 c fig.1 input voltage vs. output current (on characteristics) input voltage : v i (off) (v) output current : io (a) 03 10m 1 2m 5m 1m 200 500 100 20 50 10 2 5 0.5 1 1.5 2 2.5 v cc =5v ta=100 c 25 c ? 40 c fig.2 output current vs. input voltage (off characteristics) output current : i o (a) dc current gain : g i 100 200 500 1m 2m 5m 10m 20m 50m 100m 1k 500 200 100 50 20 10 5 2 1 v o =5v ta=100 c 25 c ? 40 c fig.3 dc current gain vs. output current
EMH9 / umh9n / imh9a transistors output current : i o (a) output voltage : v o (on) (v) 100 200 500 1m 2m 5m 10m 20m 50m 100m 1 500m 200m 100m 50m 20m 10m 5m 2m 1m l o /l i =20 ta=100 c 25 c ? 40 c fig.4 output voltage vs. output current
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