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hexfet power mosfet parameter max. units i d @ t a = 25c continuous drain current, v gs @ 10v 6.9 i d @ t a = 70c continuous drain current, v gs @ 10v 5.5 a i dm pulsed drain current 55 p d @t a = 25c power dissipation 2.5 w linear derating factor 0.02 w/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt 5.8 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings notes through are on page 8 so-8 top view 8 1 2 3 4 5 6 7 d d d d g s a s s a symbol parameter typ. max. units r jl junction-to-drain lead ??? 20 r ja junction-to-ambient ??? 50 c/w thermal resistance
v ds 100 v r ds(on) max (@v gs = 10v) 26 q g (typical) 61 nc i d (@t a = 25c) 6.9 a m features benefits industry-standard pinout so-8 package ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability form quantity tube/bulk 95 IRF7473PBF-1 tape and reel 4000 irf7473trpbf-1 package type standard pack orderable part number IRF7473PBF-1 so-8 base part number

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parameter min. typ. max. units conditions g fs forward transconductance 10 ??? ??? s v ds = 50v, i d = 4.1a q g total gate charge ??? 61 ??? i d = 4.1a q gs gate-to-source charge ??? 21 ??? nc v ds = 50v q gd gate-to-drain ("miller") charge ??? 19 ??? v gs = 10v, t d(on) turn-on delay time ??? 24 ??? v dd = 50v t r rise time ??? 20 ??? i d = 4.1a t d(off) turn-off delay time ??? 29 ??? r g = 6.0 t f fall time ??? 11 ??? v gs = 10v c iss input capacitance ??? 3180 ??? v gs = 0v c oss output capacitance ??? 230 ??? v ds = 25v c rss reverse transfer capacitance ??? 120 ??? pf ? = 1.0mhz c oss output capacitance ??? 830 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 150 ??? v gs = 0v, v ds = 80v, ? = 1.0mhz c oss eff. effective output capacitance ??? 230 ??? v gs = 0v, v ds = 0v to 80v dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy ??? 140 mj i ar avalanche current ??? 4.1 a avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 4.1a, v gs = 0v t rr reverse recovery time ??? 55 ??? ns t j = 25c, i f = 4.1a q rr reverse recoverycharge ??? 140 ??? nc di/dt = 100a/ s diode characteristics 2.3 55 " static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 ??? ??? v v gs = 0v, i d = 250 a v (br)dss / t j breakdown voltage temp. coefficient ??? 0.11 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 22 26 m v gs = 10v, i d = 4.1a v gs(th) gate threshold voltage 3.5 ??? 5.5 v v ds = v gs , i d = 250 a ??? ??? 1.0 a v ds = 95v, v gs = 0v ??? ??? 250 v ds = 80v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v i gss i dss drain-to-source leakage current

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fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 6.9a 0.1 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 15v 12v 10v 8.0v 7.0v 6.5v 6.0v 5.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.5v 0.01 0.1 1 10 100 1000 5 6 7 8 9 10 11 12 v = 25v 20 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 6.0v 20 s pulse width tj = 25c vgs top 15v 12v 10v 8.0v 7.0v 6.5v 6.0v bottom 5.5v

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fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 0 20 40 60 80 100 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 4.1a v = 20v ds v = 50v ds v = 80v ds fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.0 0.4 0.8 1.2 1.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j fig 8. maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.1 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec
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fig 11. maximum effective transient thermal impedance, junction-to-ambient 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms $
1 0.1 % $ %& $ + - $ 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 t , case temperature ( c) i , drain current (a) c d fig 9. maximum drain current vs. ambient temperature
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fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge 25 50 75 100 125 150 0 100 200 300 400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 1.8a 3.3a 4.1a 6.0 8.0 10.0 12.0 14.0 16.0 v gs, gate -to -source voltage (v) 0.020 0.025 0.030 0.035 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) i d = 6.9a 0 20 40 60 i d , drain current (a) 0.022 0.024 0.026 0.028 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) v gs = 10v t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v
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so-8 package outline (mosfet & fetky) e1 d e y b a a1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 b asic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 b as ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 8x 1.78 [ .070 ] 4. out li ne conf orms t o je de c ou t l ine ms -012aa. not es : 1. dime ns ioning & t olerancing pe r as me y14.5m-1994. 2. cont rol l ing dime ns ion: mill ime t er 3. dime ns ions are s hown in mil l imet e rs [inche s ]. 5 dime ns ion doe s not incl ude mol d prot rus ions . 6 dime ns ion doe s not incl ude mol d prot rus ions . mold prot rus ions not t o exceed 0.25 [.010]. 7 dime ns ion is t he l e ngt h of l ead f or s ol dering t o a subst rat e. mold prot rus ions not t o exceed 0.15 [.006]. dimensions are shown in milimeters (inches) so-8 part marking information p = disgnates lead - free example: t his is an irf7101 (mosfet) f 7101 xxxx int ernational logo rectifier part number lot code product (optional) dat e code (yww) y = l as t digit of t he ye ar ww = we e k a = as s e mb l y s i t e code note: for the most current drawing please refer to ir website at: http://www.irf.com/package/
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repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 16mh, r g = 25 , i as = 4.1a. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss i sd 4.1a, di/dt 210a/ s, v dd v (br)dss , t j 150c 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel (dimensions are shown in millimeters (inches) ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ms l 1 (per je de c j-s td-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jes d47f ?? guidelines) moisture sensitivity level so-8 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ note: for the most current drawing please refer to ir website at: http://www.irf.com/package/

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