jbetnl-conauctoi ^pioaucti, una. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 complementary silicon plastic power transistors ... designed for use as output device in complementary audio amplifiers up to 30-watts music power per channel features: ?collector-emitter sustaining vortage- 3.0 a * dc current gain- hfe = 25-100 o i maximum ratings characteristic collector-emitter voltage collector-base voltage emitter-base voltage collector current - continuous -peak base current total power dissipation ?tc= 25c derate above 25c operating and storage junction temperature range symbol vck> vcbo vebo ic 'cm >e pd ' j '"^sto rating 60 60 4.0 10 15 5,0 75 0.6 -65 to +150 unit v v v a a w w/c c thermal characteristics characteristic thermal resistance junction to case symbol r9jc max 1.67 unit c/w figure -1 power derating 100 40 20 25 50 75 100 125 tc , temperaturefc) 150 npn pnp mje2801t MJE2901T 10 ampere complementary silicon power tranasistors 60 volts 75 watts to-220 pm 1.base 2.cou.ector 4 collector(case) dim a b c d e f g h i j k l m o millimeters min 14.66 9.78 5.01 13.06 3.57 2.42 1.12 0.72 4.22 1.14 220 0.33 2.48 3.70 max 15.31 10.42 6.52 14.62 4.07 3.66 1.36 0.96 4.98 1.38 2.97 0.55 296 390 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished b> n.i semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors entourages customers to verify that datasheets ore current before placing orders. onnljfv
mje2801t npn / MJE2901T pnp electrical characteristics ( tc = 25c unless otherwise noted ) characteristic symbol min max unit off characteristics collector-emitter breakdown voltage (1) { lc= 200 ma, ib= 0 ) collector cutoff current (vcb=60v,ie=0) (vcb=60v,ie=0,tc=150c) emitter cutoff current (vra=4.0v,lc=0) vceo icbo iebo 60 0.1 2.0 1.0 v ma ma on characteristics (1) dc current gain (ic=3.0a,vce=2.0v) hfe base-emitter on voltage vbe(ell) (ic=3.0a,vc6=2.0 v) (1) pul 1.2 1.0 i 0.6 i 3'* > 0.2 25 100 1.4 v se test pulse width =300 us, duty cycle s 2.0% mje2b01t fig-2 "on" voltage mje2s01t tj"2sc ?v. vo mt e? !f? ? '? .)< d ? ii =' v =? 1 ? t? m- 10 t ^^ z^l o _?- r^ xfl x ^ "" ^ ^ ^< ^ y t s f y1 / / '/ /' ,- zo 1.8 e? i / iu :: i- 0 t -^=- ? i fbc == ,^i ^ vm n h !o* h be h* h ?? n= ve ?>< h- o"i tt t!-3 ii i i ?lc< ft ,?10 .- i( ' | 1 .?10 f? - ' , ^ ^- x ^ ?^ /i ^ [/ 7 7 ^ ai 0.2 as 1 2 5 10 c , collector current (amp) fig-3 dc current gain 1c , collector current (amp) fig-4 active-region safe operating area 500 10 1 0.1 - ben* thenr ngvai ndtin ?lyli -?iii mkd nitw rtt 5w it u? ?71 rtt <> ^ ? ^ "x ^_ "*xt n i^? ?\ s x * ? 1 s v v ? \0 ui- s \ 1.? \1 0.02 0.05 0.1 d_2 0.5 1 2 ic , collector current (amp) there are two limitation on the power handling ability of a transistor :avwage junction temperature and second breakdown safe operating area curv? indicat* ic-vce hmit* of the transistor that must be obaarad for reliable operation i.e., the transistor mu?t not be subjacted to greater dissipation than curves indicate. 12 s 10 20 40 60 vcc , collector emitter voltage (volts) the data of fig-4 ia base on tjp,q-1so c;tc ? variable depending on conditions.second breakdown pulse limits are valid for duty cycles to 10% provided tj^lstfc at high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
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