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this is information on a product in full production. september 2014 docid022602 rev 4 1/16 STL36N55M5 n-channel 550 v, 0.066 ? typ., 22.5 a mdmesh? m5 power mosfet in a powerflat? 8x8 hv package datasheet ? production data figure 1. internal schematic diagram features ? extremely low r ds(on) ? low gate charge and input ? capacitance ? excellent switching performance ? 100% avalanche tested applications ? switching applications description this device is an n-channel power mosfet based on mdmesh? m5 innovative vertical process technology combined with the well- known powermesh? horizontal layout. the resulting product offers extremely low on- resistance, making it particularly suitable for applications requiring high power and superior efficiency. 6 6 6 * ' 3 r z h u ) / $ 7 ? [ + 9 % r w w r p y l h z $ 0 y ' * 6 order code v ds @ t jmax r ds(on) max i d STL36N55M5 600 v 0.090 ? 22.5 a table 1. device summary order code marking package packaging STL36N55M5 36n55m5 powerflat? 8x8 hv tape and reel www.st.com
contents STL36N55M5 2/16 docid022602 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 docid022602 rev 4 3/16 STL36N55M5 electrical ratings 16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 550 v v gs gate-source voltage 25 v i d (1) 1. the value is rated according to r thj-case and limited by package. . drain current (continuous) at t c = 25 c 22.5 a i d (1) drain current (continuous) at t c = 100 c 17 a i dm (1),(2) 2. pulse width limited by safe operating area. drain current (pulsed) 90 a i d (3) 3. when mounted on fr-4 board of inch2, 2 oz cu. drain current (continuous) at t amb = 25 c 3.7 a i d (3) drain current (continuous) at t amb = 100 c 2.2 a p tot (3) total dissipation at t amb = 25 c 2.8 w p tot (1) total dissipation at t c = 25 c 150 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max ) 7a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 510 mj dv/dt (4) 4. i sd 22.5 a, di/dt 400 a/s, v peak < v (br)dss , v dd = 340 v peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.83 c/w r thj-amb (1) 1. when mounted on fr-4 board of inch2, 2 oz cu. thermal resistance junction-ambient max 45 c/w electrical characteristics STL36N55M5 4/16 docid022602 rev 4 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 550 v i dss zero gate voltage drain current (v gs = 0) v ds = 550 v 1 a v ds = 550 v, t c =125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 16.5 a 0.066 0.090 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 2670 - pf c oss output capacitance - 75 - pf c rss reverse transfer capacitance -6.6-pf c o(er) (1) 1. c o(er) is a constant capacitance value that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss equivalent output capacitance energy related v gs = 0, v ds = 0 to 440 v -71-pf c o(tr) (2) 2. c o(tr) is a constant capacitance value that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss equivalent output capacitance time related - 192 - pf r g intrinsic gate resistance f = 1 mhz open drain - 1.85 - ? q g total gate charge v dd = 440 v, i d = 16.5 a, v gs = 10 v (see figure 16 ) -62-nc q gs gate-source charge - 15 - nc q gd gate-drain charge - 27 - nc docid022602 rev 4 5/16 STL36N55M5 electrical characteristics 16 table 6. switching times symbol parameter test conditions min. typ. max unit t d(v) voltage delay time v dd = 400 v, i d = 22 a, r g = 4.7 ? v gs = 10 v (see figure 20 ) -56-ns t r(v) voltage rise time - 13 - ns t f(i) current fall time - 13 - ns t c(off) crossing time - 17 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd (1) 1. the value is rated according to r thj-case and limited by package. source-drain current - 22.5 a i sdm (1),(2) 2. pulse width limited by safe operating area source-drain current (pulsed) - 90 a v sd (3) 3. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 22.5 a, v gs = 0 - 1.5 v t rr reverse recovery time i sd = 22.5 a, di/dt = 100 a/s v dd = 100 v (see figure 17 ) - 292 ns q rr reverse recovery charge - 4.2 c i rrm reverse recovery current - 29 a t rr reverse recovery time i sd = 22.5 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 17 ) - 364 ns q rr reverse recovery charge - 6 c i rrm reverse recovery current - 33 a electrical characteristics STL36N55M5 6/16 docid022602 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am14937v1 10 -5 10 -4 10 -3 10 -2 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 single pulse =0.5 zth powerflat 8x8 hv i d 60 50 40 0 0 10 v ds (v) 20 (a) 5 15 25 70 6v 7v v gs =9, 10v 30 20 10 8v am14930v1 i d 60 40 20 0 3 5 v gs (v) 7 (a) 4 6 8 70 9 10 30 50 v ds =25v am14931v1 v gs 6 4 2 0 0 10 q g (nc) (v) 40 8 20 30 10 v dd =440v i d =16.5a 50 12 300 200 100 0 400 450 v ds 60 70 350 250 150 50 v ds (v) am14932v1 r ds(on) 0.061 0.059 0.057 0.055 0 20 i d (a) ( ) 10 0.063 v gs =10v 15 5 0.067 0.065 0.069 0.071 am14933v2 docid022602 rev 4 7/16 STL36N55M5 electrical characteristics 16 figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. normalized v (br)dss vs temperature c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 10000 100 ciss coss crss am14934v1 e oss 6 4 2 0 0 100 v ds (v) (j) 400 8 200 300 10 500 am14935v1 v gs(th) 1.00 0.90 0.80 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250a am05459v3 r ds(on) 1.7 1.3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 v gs =10v i d =16.5v am05460v3 v sd 0 20 i sd (a) (v) 10 50 30 40 0 0.2 0.4 0.6 0.8 1.0 1.2 t j =-50c t j =150c t j =25c am05461v3 9 % 5 ' 6 6 7 - ? 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