DMN2023UCB4 document number: ds35829 rev. 9 - 2 1 of 8 www.diodes.com december 2014 ? diodes incorporated DMN2023UCB4 new product n - channel enhancement mode field mosfet product summary v (br)dss r s s(on) package i s t a = +25c 24 v 2 6 m ? @ v gs = 4.5 v x 1 - wlb1818 - 4 6 .0 a description this new generation mosfet is designed to minimize the on - state resistance (r d s( on ) ) with t hin wlcsp packaging process and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? battery management ? load switch ? battery protection features ? built - in g - s p rotection d iode a gainst esd 2kv hbm. ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? case: x 1 - wlb1818 - 4 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram ordering information (note 4) part number case packaging dm n 2023ucb4 - 7 x 1 - wlb1818 - 4 3 , 000/tape & reel notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of halogen - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com/products/packages.html . marking information date code key year 2011 2012 2013 2014 2015 2016 2017 code y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view n - channel n - channel equivalent circuit 8 w = product type marking code ym = date code marking y or y = year (ex: y = 2011) m or m = month (ex: 9 = september) s1 g1 s2 g2 esd protected to 2kv 8w ym
DMN2023UCB4 document number: ds35829 rev. 9 - 2 2 of 8 www.diodes.com december 2014 ? diodes incorporated DMN2023UCB4 new product maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v s ss 24 v gate - source voltage (note 5) v gss ? a = +25 c (note 6 ) steady state t a = +25 c t a = + 70 c i s 6 .0 4. 8 a pulsed source current @ t a = +25c (notes 6 & 7 ) i s m 2 0 a thermal characteristics characteristic symbol value units power dissipation, @ t a = +25c (note 6 ) p d 1.45 w thermal resistance, junction to ambient @ t a = +25c (note 6 ) r ? ja 88.21 ? c/w operating and storage temperature range t j , t stg - 55 to +150 ? c electrical characteristics ( @ t a = + 25c , unless otherwise specified .) characteristic symbol min typ max unit test condition off characteristics (note 8 ) source to source breakdown voltage t j = +25c v (br) ss 24 s = 1m a , v gs = ? j = +25c i s ss s s = 20 v, v gs = 0v test circuit 1 gate - body leakage i gss ? gs = ? ds = 0v test circuit 2 on characteristics (note 8 ) gate threshold voltage v gs(th) 0. 5 s s = 10v , i s = 1.0m a test circuit 3 static source - source on - resistance r s s (on) 17 21.5 25.5 m ? gs = 6 .5 v, i s = 3.0 a test circuit 5 17.5 22 26 v gs = 4.5 v, i s = 3.0 a test circuit 5 18.5 23 27 v gs = 4.0 v, i s = 3.0 a test circuit 5 19 23.5 29 v gs = 3.7 v, i s = 3.0 a test circuit 5 19.5 24 33 v gs = 3.1 v, i s = 3.0 a test circuit 5 21.5 27 40 v gs = 2.5 v, i s = 3.0 a test circuit 5 forward transfer admittance |y fs | s s = 10 v, i s = 3.0 a test circuit 4 body diode forward voltage v f(s - s) f = 3 .0a, v gs = 0v, test circuit 6 dynamic characteristics (note 9 ) input capacitance c iss s s = 10 v, v gs = 0v, f = 1.0mhz test circuit 7 output capacitance c oss rss g gs = 4.5 v, v ss = 10 v, i s = 6 a test circuit 9 turn - on delay time t d(on) dd = 10 v, r l = 3.33 , s = 3. 0a test circuit 8 turn - on rise time t r d(off) f notes: 5. a ec - q101 vgs maximum is 9.6 v . 6 . device mounted on fr4 material with 1 - inch 2 (6.45 - cm 2 ),2 - oz.(0.071 - mm thick) cu. 7 . repetitive rating, pulse width limited by junction temperature. 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to production testing.
DMN2023UCB4 document number: ds35829 rev. 9 - 2 3 of 8 www.diodes.com december 2014 ? diodes incorporated DMN2023UCB4 new product i , drain current (a) d figure 4. typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.01 0.02 0.03 0.04 0 1 v = 4.5v gs 2 3 4 5 6 7 8 9 10 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a t , junction temperature ( c) figure 5 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0 0.5 1 1.5 2 -50 -25 0 25 50 75 100 125 150 v = v i = 3a gs d 4.5 i , d r a i n c u r r e n t ( a ) d v , gate-source voltage (v) gs figure 2 typical transfer characteristics 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a v , drain-source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0 0.4 0.8 1.2 1.6 2 v = 1.0v gs v = 1.2v gs v = 1.5v gs v = 4.0v gs v = 4.5v gs v = 2.0v gs v = 2.5v gs t , junction temperature ( c) figure 6 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.01 0.02 0.03 0.04 v = v i = 3a gs d 4.5 i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.01 0.02 0.03 0.04 0.05 0 1 2 3 4 5 6 v = 2.5v gs v = 4.5v gs v = 4.0v gs v = 3.1v gs v = 3.7v gs
DMN2023UCB4 document number: ds35829 rev. 9 - 2 4 of 8 www.diodes.com december 2014 ? diodes incorporated DMN2023UCB4 new product t , junction temperature ( c) figure 7 gate threshold variation vs. ambient temperature j ? v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0.2 0.4 0.6 0.8 1 -50 -25 0 25 50 75 100 125 150 i = 1ma d i = 250a d v , gate-source voltage (v) gs figure 12 typical transfer characteristic r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.015 0.017 0.019 0.021 0.023 0.025 0.027 0.029 0.031 0.033 0.035 1 2 3 4 5 6 7 8 i = 3.0a d i , d r a i n l e a k a g e c u r r e n t ( n a ) d s s v , drain-source voltage (v) ds figure 9 typical drain-source leakage current vs. voltage 0.1 1 10 100 1000 10000 0 3 6 9 12 15 18 21 24 t = 25c a t = 85c a t = 125c a t = 150c a i , drain-source current d figure 11 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.015 0.018 0.021 0.024 0.027 0.03 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v = 6.5v gs v , gate-source voltage (v) figure 10 typical gate-source leakage current vs. gate-source voltage gs i , g a t e - s o u r c e l e a k a g e c u r r e n t ( n a ) g s s 0.1 1 10 100 1000 10000 1 2 3 4 5 6 7 8 t = 25c a t = 85c a t = 125c a t = 150c a t = -55c a v , source-drain voltage (v) sd figure 8 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s 0 1 2 3 4 5 6 7 8 9 10 0 0.3 0.6 0.9 1.2 1.5 t = 125c a t = 150c a t = 25c a t = -55c a t = 85c a
DMN2023UCB4 document number: ds35829 rev. 9 - 2 5 of 8 www.diodes.com december 2014 ? diodes incorporated DMN2023UCB4 new product test circuits test circuit 1 i sss test circuit 2 i gss when fet1 is measured, between gate and source of fet2 are shorted. test circuit 3 v gs(off) when fet1 is measured, between gate and source of fet2 are shorted. test circuit 4 |y fs | i s /v gs test circuit 5 r ss(on) v ss /i s test circuit 6 v f(s - s) when fet1 is measured,fet2 is added v gs +4.5 v.
DMN2023UCB4 document number: ds35829 rev. 9 - 2 6 of 8 www.diodes.com december 2014 ? diodes incorporated DMN2023UCB4 new product test circuits (cont.) test circuit 7 test circuit 8 t d(on) , t r , t d(off) , t f test circuit 9 q g
DMN2023UCB4 document number: ds35829 rev. 9 - 2 7 of 8 www.diodes.com december 2014 ? diodes incorporated DMN2023UCB4 new product package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. x1 - wlb1818 - 4 dim min max typ a 0.3420 0.4080 0.3750 a1 0.1350 0.1650 0.1500 a2 0.1850 0.2150 0.2000 a3 0.0220 0.0280 0.0250 b 0.2700 0.3300 0.3000 d 1.7800 1.8000 1.7900 e 1.7800 1.8000 1.7900 e 0.650 bsc all dimensions in mm dimensions value (in mm) c 0.650 d 0.300 c c d (4x) 1 2 d e pin#1 a2 a seating plane e e a b ? b (4x) a b a1 a3 1 2 2 1 (backside coating)
DMN2023UCB4 document number: ds35829 rev. 9 - 2 8 of 8 www.diodes.com december 2014 ? diodes incorporated DMN2023UCB4 new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of t his document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, internatio nal or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support di odes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devi ces or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect it s safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 4 , diodes incorporated www.diodes.com
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