dm p2100ucb9 document nu mber: ds 35725 rev. 5 - 2 1 of 6 www.diodes.com may 2015 ? diodes incorporated dmp2100ucb9 new product dual p - channel enhancement mode mosfet product summary (typ. @ v gs = - 4.5v , t a = +25c) v dss r ds(on) q g q gd i d - 2 0 v 8 0 m 3 . 3 nc 0.6 nc - 4 a description this new gener ation mosfet is designed to minimize the on - state resistance (r d 1d2 ( on ) ) and yet maintain superior switching performance, making it ideal for high - efficiency power management applications. applications ? battery management ? load switch ? battery pr otection features and benefits ? ld - mos technology with the lowest figure of merit: r ds( on ) = 8 0 m ? to minimize on - state losses q g = 3 . 3 nc for ultra - fast s witching ? v gs(th) = - 0. 7 v typ. for a low turn - on potential ? csp with footprint 1.5mm 1.5mm ? height = 0.6 2 mm for low profile ? esd = 3 kv hbm protection of gate ? totally lead - free & fully rohs compliant (n otes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability mechanical data ? case: u - wlb1515 - 9 ? terminal connections: see diagram below ? weight: 0.00 18 grams ( a pproximate) ordering information (note 4 ) part number case packaging dmp2 100 ucb9 - 7 u - wlb1515 - 9 3 , 000/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quali ty/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine ( <1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information u - wlb1515 - 9 date code key year 2012 2013 2014 2015 2016 2017 2018 code z a b c d e f month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view 6 w = product type marking code ym = date code marking y = year (ex: y = 2011) m = month (ex: 9 = september) 6w ym esd protected to 3kv g1 d1 d1 ss d2 d1 g2 d2 d2
dm p2100ucb9 document nu mber: ds 35725 rev. 5 - 2 2 of 6 www.diodes.com may 2015 ? diodes incorporated dmp2100ucb9 new product maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v d 1d2 - 20 v gate - source voltage v gs - 6 v continuous drain current (note 5 ) v gs = - 4.5 v steady state t c = + 25 c t c = + 70 c i d 1d2 - 3.0 - 2.1 a continuous d rain current (note 6 ) v gs = - 4.5 v steady sta te t c = + 25 c t c = + 70 c i d 1d2 - 4.0 - 3.0 a continuous source pin current (note 6 ) i s - 2.0 a continuous gate clamp current (note 6 ) i g - 0.4 a pulsed source pin current ( pu lse duration 10s, duty cycle sm - 15 a pulsed drain current ( pulse duration 10s, duty cycle dm - 28 a pulsed gate clamp current ( pulse duration 10s, duty cycle gm - 6 a thermal characteristics (@ t a = +25c, unless otherwise specif ied.) characteristic symbol value units total power dissipation (note 5 ) p d 0.8 w total power dissipation (note 6 ) p d 1.6 w thermal resistance, junction to ambient (note 5 ) r ja 152 c/w thermal resistance, junction to ambient (note 6 ) r ja 65 c/w op erating and storage temperature range t j, t stg - 55 to +150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown volta ge bv d 1d2 - 20 gs = 0v, i d 1d2 = - 250a g ss - 6.1 gs = - 250a, d 1d2 = 0v zero gate voltage drain current @ t c = + 25c i d d s d 1d2 = - 16 v, v gs = 0v gate - source leakage i gss gs = - 6 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs(th) - 0.4 - 0.7 - 0.9 v v d 1d2 = v gs , i d s = - 250 a d 1d2 (on) gs = - 4.5 v, i d 1d2 = - 1 a 105 130 v gs = - 2 .5v, i d 1d2 = - 1 a 140 175 v gs = - 1.8 v, i d 1d2 = - 1 a forward transfer admittance |y fs | d 1d2 = - 10v , i d 1d2 = - 1 a diode characteristics diode forward voltage (note 6 ) v sd gs = 0v, i d1d2 = - 1 a reverse recovery charge q rr dd = - 9.5v, i f = - 1a, di/dt = 200a/ rr dynamic characteristics (note 8 ) input capacitance c iss d 1d2 = - 1 0 v, v gs = 0v , f = 1.0mhz output capacitance c oss 150 pf reverse transfer capacitance c rss 55 pf total gate charge (4.5v) q g 4.2 nc v gs = - 4.5 v, v d 1d2 = - 1 0 v, i d 1d2 = - 1 a gate - source charge q gs gd th q g (th) d(on) d 1 d 2 = - 10 v, v gs = - 4.5 v, i d1d2 = - 1a , r g = 3 0 r d(off) f notes: 5 . device mounted on fr - 4 pcb with minimum recommended pad layout . 6 . device mounted on fr4 material with 1 - inch 2 (6.45 - cm 2 ), 2 - oz. ( 0.071 - mm thick) cu . 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to production testing .
dm p2100ucb9 document nu mber: ds 35725 rev. 5 - 2 3 of 6 www.diodes.com may 2015 ? diodes incorporated dmp2100ucb9 new product 0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0 -v , drain -source voltage(v) fig. 1 typical output characteristics ds - i , d r a i n c u r r e n t ( a ) d v = -1.2v gs v = -1.5v gs v = -1.8v gs v = -2.5v gs v = -4.5v gs 0 0.5 1.0 1.5 2.0 -v , gate-source voltage (v) gs fig. 2 typical transfer characteristics - i , d r a i n c u r r e n t ( a ) d t = 150 c a ? t = 125 c a ? t = 85 c a ? t = 25 c a ? t = -55 c a ? v = -5.0v ds -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 3 on-resistance variation with temperature 0.5 0.7 0.9 1.1 1.3 1.5 1.7 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) -v , gate source voltage (v) gate voltage gs fig. 4 typical on-resistance vs. drain current and 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0 1 2 3 4 5 6 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.2 0.4 0.6 0.8 1.0 1.2 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) fig. 5 gate threshold variation vs. ambient temperature a - v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0 1 2 3 4 5 6 7 8 9 10 0.4 0.6 0.8 1.0 1.2 1.4 -v , source-drain voltage (v) fig. 6 diode forward voltage vs. current sd - i , s o u r c e c u r r e n t ( a ) s
dm p2100ucb9 document nu mber: ds 35725 rev. 5 - 2 4 of 6 www.diodes.com may 2015 ? diodes incorporated dmp2100ucb9 new product 0 5 10 15 20 -v , drain-source voltage (v) fig. 7 typical junction capacitance ds c , j u n c t i o n c a p a c i t a n c e ( p f ) t c oss c rss f = 1mhz c iss 0 1 2 3 4 5 6 0 1 2 3 4 q , total gate charge (nc) fig. 8 gate-charge characteristics g - v , g a t e - s o u r c e v o l t a g e ( v ) g s 0.1 1 10 100 -v , drain-source voltage (v) fig. 9 soa, safe operation area ds t = 150c t = 25c single pulse dut on 1 * mrp board v = -6v j(max) a gs 0.01 0.1 1 10 100 - i , d r a i n c u r r e n t ( a ) d r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10 s w 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration times (sec) fig. 10 transient thermal resistance r (t) = r(t) * r ?? ja ja r = 70c/w duty cycle, d = t1/ t2 ? ja 0.001 0.01 0.1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e 1 d = 0.7 d = 0.9 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse
dm p2100ucb9 document nu mber: ds 35725 rev. 5 - 2 5 of 6 www.diodes.com may 2015 ? diodes incorporated dmp2100ucb9 new product package outline dimensions please see ap02002 at http://w ww.diodes .com/datasheets/ap02002 .pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. u - wlb1515 - 9 dim min max typ a -- 0.62 -- a2 -- 0.36 0.36 a3 0.020 0.030 0.025 b 0.27 0.37 0.32 d 1.47 1.50 1.49 e 1.47 1.50 1.49 e -- -- 0.50 all dimensions in mm dimensions value (in mm) c 0.50 c1 1.00 c2 1.00 d 0.25 d e pin #1 id e e 9x-? b e a2 a seating plane a3 e c c1 c d c2
dm p2100ucb9 document nu mber: ds 35725 rev. 5 - 2 6 of 6 www.diodes.com may 2015 ? diodes incorporated dmp2100ucb9 new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make m odifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such appli cations shall assume all risks o f such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorpor ated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect o f any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmle ss against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be transla ted into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expe rtise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorpora ted and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
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