an amp comoanv rf mosfet power transistor, 8ow, 28v 2 - 175 mhz DU2880T features n-channel enhancement mode device dmos structure lower capacitances for broadband operation high saturated output power lower noise figure than competitive devices absolute maximum ratings at 25c thermal resistance electrical characteristics at 25c i parameter 1 symbol 1 min 1 max ( units 1 test conditions drain-source breakdown voltage bvdss 65 - v v,,=o.o v, 1,,=20.0 ma drain-source leakage current gate-source leakagecurrent ?dss 4.0 ma v,,=28.0 v, v,,=o.o v ?gss 4.0 pa v,,=20.0 v, v,,=o.o v gate threshold voltage v gsithi 2.0 6.0 v v&o.0 v, 1,,=400.0 ma forwardtransconductance gm 2.0 - s v,,=lo.o v, 1,,=4.0 a, av,,=l .o v, 80 us pulse inputcapacitance c iss 180 pf v,,=28.0 v, f=l .o mhz output capacitance c ass 160 pf v,,=28.0 v, f=l .o mhz reverse capacitance %s - 32 pf v,,=28.0 v, f=l .o mhz power gain gp 13 - db v,,=28.0 v, i,,=400 ma, p,,=80.0 w, f=175 mhz drain efficiency % 60 - % v,,=28.0 v. i,,=400 ma, p,,=80.0 w, f=175 mhz load mismatch tolerance vswr-t - 3o:l - v,,=28.0 v, i,,=400 ma, p,,,r=80.0 w, f=175 mhz specifications subject to change without notice. m/a-com, inc. north america: tel. (boo) 366-2266 n asia/pacific: tel. +81 (03) 3226-1671 n europe: tel. +44 (1344) 869 595 fax (800) 618-8883 fax +81 (03) 3226-1451 fax +44 (1344) 300 020
rf mosfet power transistor, 8ow, 28v DU2880T v2.00 typical broadband performance curves efficiency vs frequency v,,=28 v i,,=400 ma po,,=80 w 50s 25 50 100 150 175 frequency (mhz) power output vs power input 120 r v,,=28 v i,,=400 ma i 100 s 5 80 e f$ 60 b 3 40 2 20 0 1 0.1 0.2 0.3 1 2 3 4 5 power input(w) gain vs frequency 25 i v,,=28 v i,,=400 ma p,,,=80 w 10 25 50 100 150 175 frequency (mhz) power output vs supply voltage 120 i,,=400 ma f=175 mhz p,,=3.0 w loo - 5 80. i 13 15 20 25 30 33 supply voltage (v) specifications subject !o change without notrce. m/a-com, inc. north america: tel. (800) 366-2266 n asia/pacific: tel. +81 (03) 3226-1671 fax (800) 618-8883 fax +81 (03) 3226-1451 d europe: tel. +44 (1344) 869 595 fax +44 (1344) 300 020
rf mosfet power transistor, 8ow, 28v DU2880T v2.00 typical device impedance frequency (mhz) 30 50 100 175 z,, (ohms) z load (ohms) 5.4 - j 4.4 5.7 + j 4.7 2.5 - j 4.4 3.4 + j 3.5 l.s-j3.4 2.4 + j 2.4 0.7 - j 1.2 1.7 + j 0.8 v,,=28 v, i,,=400 ma, p,,,.=80 watts z,, is the se+ equivalent input impedance of the device from gate to source. z load is the optimum series equivalent load impedance as measured from drain to ground. rf test fixture vds = 2s volts iw=4ooma vgs j3 r2 1 vds j4 cl2 -! 35. ic? - - - - l4 rf out rf in jl cl cl ,c3 c2.c9,c10 cgl 1 c5 c&c9 c7 cl2 ll l2 w.l4 rl i%? cl board parts list trimmer capacitor 4-4opf capacitor 5@f capacitor 10od~f monolithic circuit capacitor 0.01 uf trimmer capacitor s-~bopf capacitor 15pf electrolytic capacitor 5&f 50 volt no. 12 awg copper wire x 1.18? (loop 0.5?) no, 12 awg copper wire x 1? (loop 0.4?) 8 turns of no. 18 awg enamel wire on y).25-. close wound resistor 300 ohms 0.5 watt resistor 27k ohms 0.25 walt du2bbot fr4 o.os2 specifications subject to change without notice. wa-com, inc. north america: tel. (800) 366-2266 m asia/pacific: tel. +81 (03) 3226-1671 n europe: tel. +44 (1344) 869 595 fax (800) 618-8883 fax +81 (03) 3226-1451 fax +44(1344)300 020
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