? semiconductor components industries, llc, 2014 july, 2014 ? rev. 1 1 publication order number: nvtfs4c08n/d nvtfs4c08n power mosfet 30 v, 5.9 m , 55 a, single n?channel, 8fl features ? low r ds(on) to minimize conduction losses ? low capacitance to minimize driver losses ? optimized gate charge to minimize switching losses ? nvtfs4c08nwf ? w ettable flanks product ? nvt prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain?to?source v oltage v dss 30 v gate?to?source v oltage v gs 20 v continuous drain current r ja (notes 1, 2, 4) steady state t a = 25 c i d 17 a t a = 100 c 12 power dissipation r ja (note 1, 2, 4) t a = 25 c p d 3.1 w t a = 100 c 1.6 continuous drain current r jc (note 1, 3, 4) t a = 25 c i d 55 t a = 100 c 39 a power dissipation r jc (note 1, 3, 4) t a = 25 c p d 31 w t a = 100 c 15 pulsed drain current t a = 25 c, t p = 10 s i dm 253 a operating junction and storage temperature t j , t stg ?55 to +175 c source current (body diode) i s 28 a single pulse drain?to?source avalanche energy (t j = 25 c, i l = 20 a pk , l = 0.1 mh) e as 20 mj lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. thermal resistance maximum ratings parameter symbol value unit junction?to?case ? steady state (drain) (notes 1 and 4) r jc 4.9 c/w junction?to?ambient ? steady state (notes 1 and 2) r ja 48 1. the entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. surface?mounted on fr4 board using a 650 mm 2 2 oz. cu pad. 3. assumes heat?sink sufficiently large to maintain constant case temperature independent of device power. 4. continuous dc current rating. maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. http://onsemi.com v (br)dss r ds(on) max i d max 30 v 5.9 m @ 10 v 55 a n?channel mosfet d (5?8) s (1,2,3) g (4) wdfn8 ( 8fl) case 511ab marking diagram 9.0 m @ 4.5 v (note: microdot may be in either location) 1 1 xxxx ayww d d d d s s s g see detailed ordering and shipping information on page 5 o f this data sheet. ordering information 4c08 = specific device code for nvmts4c08n 08wf = specific device code of nvtfs4c08nwf a = assembly location y = year ww = work week = pb?free package
nvtfs4c08n http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v drain?to?source breakdown voltage temperature coefficient v (br)dss / t j 13.8 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 24 v t j = 25 c 1.0 a t j = 125 c 10 gate?to?source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 5) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 1.3 2.2 v negative threshold temperature coefficient v gs(th) /t j 5.0 mv/ c drain?to?source on resistance r ds(on) v gs = 10 v i d = 30 a 4.7 5.9 m v gs = 4.5 v i d = 18 a 7.2 9.0 forward transconductance g fs v ds = 1.5 v, i d = 15 a 42 s gate resistance r g t a = 25 c 1.0 charges and capacitances input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = 15 v 1113 pf output capacitance c oss 702 reverse transfer capacitance c rss 39 capacitance ratio c rss /c iss v gs = 0 v, v ds = 15 v, f = 1 mhz 0.035 total gate charge q g(tot) v gs = 4.5 v, v ds = 15 v; i d = 30 a 8.4 nc threshold gate charge q g(th) 1.8 gate?to?source charge q gs 3.5 gate?to?drain charge q gd 3.3 gate plateau voltage v gp 3.4 v total gate charge q g(tot) v gs = 10 v, v ds = 15 v; i d = 30 a 18.2 nc switching characteristics (note 6) turn?on delay time t d(on) v gs = 4.5 v, v ds = 15 v, i d = 15 a, r g = 3.0 9.0 ns rise time t r 33 turn?off delay time t d(off) 15 fall time t f 4.0 turn?on delay time t d(on) v gs = 10 v, v ds = 15 v, i d = 15 a, r g = 3.0 7.0 ns rise time t r 26 turn?off delay time t d(off) 19 fall time t f 3.0 drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 10 a t j = 25 c 0.79 1.1 v t j = 125 c 0.66 reverse recovery time t rr v gs = 0 v, dis/dt = 100 a/ s, i s = 30 a 28.3 ns charge time t a 14.5 discharge time t b 13.8 reverse recovery charge q rr 15.3 nc product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 5. pulse test: pulse width 300 s, duty cycle 2%. 6. switching characteristics are independent of operating junction temperatures.
nvtfs4c08n http://onsemi.com 3 typical characteristics 10 100 1000 10000 5 1015202530 0.002 0.003 0.004 0.005 0.006 0.007 0.008 0.009 0.010 10 20 30 40 50 60 70 0.002 0.004 0.006 0.008 0.010 0.012 0.014 0.016 0.018 0.020 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 0 10 20 30 40 50 60 70 80 00.511.522.533.544.55 0 0.5 1 1.5 2 2.5 3 figure 1. on?region characteristics figure 2. transfer characteristics v ds , drain?to?source voltage (v) v gs , gate?t o?source voltage (v) figure 3. on?resistance vs. v gs figure 4. on?resistance vs. drain current and gate voltage v gs , gate?t o?source voltage (v) i d , drain current (a) figure 5. on?resistance variation with temperature figure 6. drain?to?source leakage current vs. voltage t j , junction temperature ( c) v ds , drain?to?source voltage (v) i d , drain current (a) i d , drain current (a) r ds(on) , drain?to?source resistance ( ) r ds(on) , drain?to?source resistance ( ) r ds(on) , drain?to?source resistance (normalized) i dss , leakage (na) 3.8 v 3.2 v 3.0 v 2.8 v t j = 25 c v ds = 3 v t j = 25 c t j = 125 c t j = ?55 c i d = 30 a v gs = 4.5 v t j = 25 c v gs = 10 v i d = 30 a v gs = 10 v v gs = 0 v t j = 85 c t j = 150 c t j = 125 c 3.6 v 3.4 v 4 v 4.2 v 4.5 v 5.5 v ? 10 v 0 10 20 30 40 50 60 70 80 90 100 0.60 0.80 1.00 1.20 1.40 1.60 1.80 ?50 ?25 0 25 50 75 100 125 150 175
nvtfs4c08n http://onsemi.com 4 typical characteristics 0.01 0.1 1 10 100 0.1 1 10 100 0 2 4 6 8 10 12 14 16 18 20 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 10 100 1000 1 10 100 0 2 4 6 8 10 024681012141618 20 0 200 400 600 800 1000 1200 1400 1600 1800 0 5 10 15 20 25 30 figure 7. capacitance variation figure 8. gate?to?source and drain?to?source voltage vs. total charge v ds , drain?to?source voltage (v) q g , total gate charge (nc) figure 9. resistive switching time variation vs. gate resistance figure 10. diode forward voltage vs. current r g , gate resistance ( ) v sd , source?to?drain voltage (v) figure 11. maximum rated forward biased safe operating area v ds , drain?to?source voltage (v) c, capacitance (pf) v gs , gate?t o?source voltage (v) t, time (ns) i s , source current (a) i d , drain current (a) v gs = 0 v t j = 25 c c iss c oss c rss v dd = 15 v i d = 15 a v gs = 10 v t d(off) t d(on) t r t f t j = 25 c t j = 125 c v gs = 0 v 100 s 10 ms 1 ms dc 10 s q gs q t q gd t j = 25 c v dd = 15 v v gs = 10 v i d = 30 a v gs = 10 v t c = 25 c 650 mm 2 2 oz cu pad r ds(on) limit thermal limit package limit
nvtfs4c08n http://onsemi.com 5 typical characteristics 0.01 0.1 1 10 100 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 figure 12. thermal response pulse time (sec) r ja(t) ( c/w) 10% duty cycle = 50% 20% 5% 2% 1% single pulse figure 13. g fs vs. i d i d (a) g fs (s) figure 14. avalanche characteristics t av , time in avalanche (s) i peak , drain current (a) 1 10 100 1.e?03 1.0e?06 1.0e?05 1.0e?04 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 t j(initial) = 25 c t j(initial) = 125 c ordering information device package shipping ? nvtfs4c08ntag wdfn8 (pb?free) 1500 / tape & reel nvtfs4c08nwftag wdfn8 (pb?free) 1500 / tape & reel nvtfs4c08ntwg wdfn8 (pb?free) 5000 / tape & reel NVTFS4C08NWFTWG wdfn8 (pb?free) 5000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
nvtfs4c08n http://onsemi.com 6 package dimensions wdfn8 3.3x3.3, 0.65p case 511ab issue d m 1.40 1.50 0 ??? 1.60 12 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994 . 2. controlling dimension: millimeters. 3. dimension d1 and e1 do not include mold flash protrusions or gate burrs. 1234 5 6 top view side view bottom view d1 e1 d e b a 0.20 c 0.20 c 2x 2x dim min nom millimeters a 0.70 0.75 a1 0.00 ??? b 0.23 0.30 c 0.15 0.20 d d1 2.95 3.05 d2 1.98 2.11 e e1 2.95 3.05 e2 1.47 1.60 e 0.65 bsc g 0.30 0.41 k 0.65 0.80 l 0.30 0.43 l1 0.06 0.13 a 0.10 c 0.10 c detail a 14 8 l1 e/2 8x d2 g e2 k b a 0.10 b c 0.05 c l detail a a1 e 6x c 4x c seating plane 5 max 0.80 0.05 0.40 0.25 3.15 2.24 3.15 1.73 0.51 0.95 0.56 0.20 m *for additional information on our pb?free strategy and solderin g details, please download the on semiconductor soldering an d mounting techniques reference manual, solderrm/d. soldering footprint* 0.65 0.42 0.75 2.30 3.46 package 8x 0.055 0.059 0 ??? 0.063 12 0.028 0.030 0.000 ??? 0.009 0.012 0.006 0.008 0.116 0.120 0.078 0.083 0.116 0.120 0.058 0.063 0.026 bsc 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.020 0.037 0.022 0.008 min nom inches max 7 8 pitch 3.60 0.57 0.47 outline dimension: millimeters 3.30 bsc 3.30 bsc 0.130 bsc 0.130 bsc 2.37 0.66 4x e3 0.23 0.30 0.40 0.009 0.012 0.016 e3 4x on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 nvtfs4c08n/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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