o 3.0 o 0.6 HV10G30 HV10G30 mark 30kv 10ma high voltage diodes maximum reverse recovery time trr at 25c features high speed switching high current high surge resisitivity for crt discharge high reliability design high voltage applications maximum ratings and characteristics absolute maximum ratings items repetitive peak renerse voltage average output current suege current junction temperature allowable operation case temperature symbols v rrm i o i fsm t j tc condition ta=25c,resistive load 10 125 120 -40 to +125 units kv ma a peak c c c electrical characteristics (ta=25c unless otherwise specified ) items maximum forward voltage drop maximum reverse current symbols v f ir 1 ir 2 conditions at 25c,i f at 25c,v r at 100c,v units v ua ua junction capacitance cj at 25c,v r storage temperature t stg is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. outline drawings : mm cathode mark 27 min. 27 min. 12 cathode mark lot no. gete electronics co.,ltd http://www.getedz.com e-mail:sales@getedz.com 2014 =0v,f=1mhz -- type HV10G30 HV10G30 55 5.0 2.0 0.8 30 x light power supply laser voltage doubler circuit microwave emission power pf hvgt =v rrm r =v rrm 100 ns =i f(av) HV10G30 HV10G30 do-312
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