rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140219 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . rf micro devices ? and rfmd ? are trademarks of rfmd, llc. bluetooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks , and registered trademarks are the property of their respective owners. ?2013, rf micro devices, inc. 1 of 3 RFPP2590 gaas push pull hybrid 4 5 mhz to 1 200 mhz the RFPP2590 is a hybrid push pull amp lifier module. the part employs gaas die and operates from 45mhz to 1200mhz. it provides excellent linearity and superior return loss performance with low noise and optimal re liability. package: sot - 115j features excellent linearity superior r eturn loss performance extremely low distortion optimal reliability low noise unconditionally stable under all terminations 22.5 db min. gain at 1 200 mhz 240 ma max. at 24v dc applications 4 5 mhz to 1 200 mhz cat v am plifier systems ordering information RFPP2590 box with 50 pieces absolute maximum rat ings parameter rating unit rf input voltage (single tone) 7 5 dbmv dc supply over - voltage (5 minutes) 30 v storage temperature - 40 to +100 c operating mounting base temperature - 30 to +100 c caution! esd sensitive device. rohs (restriction of hazardous substances): compliant per eu directive 2011/65/eu. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical performance or functional operation of the device under absolute maximum r ating conditions is not implie d. RFPP2590
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140219 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component ci rcuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 3 RFPP2590 nominal operating parameters parameter specification unit condition min typ max general performance v + = 24v; t mb = 30c; z s = z l = 75 power gain 21. 5 2 2 22. 5 db f = 45 mhz 22.5 23. 5 24.0 db f = 1 200 mhz slope [ 1 ] 1.0 1.5 2. 0 db f = 4 5 mhz to 1 200 mhz flatness of frequency response 0.8 db f = 4 5 mhz to 1 200 mhz input return loss - 20 db f = 4 5 mhz to 320 mhz - 1 9 db f = 320mhz to 640 mhz - 1 8 db f = 640mhz to 870 mhz - 1 8 db f = 870mhz to 100 0 mhz - 17 db f = 100 0mhz to 1 2 0 0 mhz output return loss - 20 db f = 4 5 mhz to 320 mhz - 19 db f = 320mhz to 640 mhz - 18 db f = 640mhz to 870 mhz - 17 db f = 870mhz to 100 0 mhz - 1 6 db f = 100 0mhz to 1 2 0 0 mhz noise figure 5 .5 6 .5 db f = 50mhz to 1 2 00 mhz total current consumption (dc) 230.0 2 40.0 ma distortion data 40 mhz to 550 mhz v + = 24v; t mb = 30c; z s = z l = 75 ctb - 6 4 - 6 0 dbc 79 ch. flat, v o = 4 4 dbmv at 550 mhz, plus 75 digital channels ( - 6db offset) [2] xmod - 6 0 - 5 6 dbc cso - 7 0 - 6 5 dbc cin 6 2 6 6 db 1. the slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 2. 79 analog channels, ntsc frequency raster: 55.25mhz to 547.25mhz, +4 4 dbmv flat output level, plus 75 digital channels, - 6db offset relative to the equivalent analog carrier. composite second order (cso) - the cso parameter (both sum and difference products) is defined by the ncta. composite triple beat (ctb) - the ctb parame ter is defined by the ncta. cross modulation (xmod) - cross modulation (xmod) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. carrier to intermodulation noise (cin) - the cin parameter is d efined by ansi/scte 17 (test procedure for carrier to noise).
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140219 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component ci rcuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 3 RFPP2590 package drawing (dimensions in millimeters) 13, 4 1 2 3 5 7 8 9 r o q m 5 10mm 0 scale b n l f a d h ? g t s p j u i e c k european projection n o m i n a l m i n m a x a 4 4 , 6 0 , 2 4 4 , 4 4 4 , 8 b 1 3 , 6 0 , 2 4 4 , 4 1 3 , 8 c 2 0 , 4 0 , 5 1 9 , 9 2 0 , 9 d 8 0 , 1 5 7 , 8 5 8 , 1 5 e 1 2 , 6 0 , 1 5 1 2 , 4 5 1 2 , 7 5 f 3 8 , 1 0 , 2 3 7 , 9 3 8 , 3 g 4 + 0 , 2 / - 0 , 0 5 3 , 9 5 4 , 2 h 4 0 , 2 3 , 8 4 , 2 i 2 5 , 4 0 , 2 2 5 , 2 2 5 , 6 j u n c 6 - 3 2 - - k 4 , 2 0 , 2 4 , 0 4 , 4 l 2 7 , 2 0 , 2 2 7 , 0 2 7 , 4 m 1 1 , 6 0 , 5 1 1 , 1 1 2 , 1 n 5 , 8 0 , 4 5 , 4 6 , 2 o 0 , 2 5 0 , 0 2 0 , 2 3 0 , 2 7 p 0 , 4 5 0 , 0 3 0 , 4 2 0 , 4 8 q 2 , 5 4 0 , 3 2 , 2 4 2 , 8 4 r 2 , 5 4 0 , 5 2 , 0 4 3 , 0 4 s 2 , 5 4 0 , 2 5 2 , 2 9 2 , 7 9 t 5 , 0 8 0 , 2 5 4 , 8 3 5 , 3 3 u 5 , 0 8 0 , 2 5 4 , 8 3 5 , 3 3 p i n n a m e 1 i n p u t 2 - 3 g n d 4 5 + v b 6 7 - 8 g n d 9 o u t p u t pinning: notes:
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