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| p s bt 3 01 5 0 v ct april 2 1 ,2015 - rev.00 page 1 ultra low vf schottky barrier rectifier voltage 15 0 v current 30 a f eatures ? ideal for automated placement ? ultra low forward voltage drop, low power loss ? high efficiency operation ? low thermal resistance ? lead free in compliance with e u rohs 2011/65/eu directive mechanical data ? case: molded plastic, to - 220ab ? terminals: solder plated, solderable per mil - std - 750,method 2026 ? approx. weight: 0.067 ounces, 1.89 grams ? marking: part number note : 1. device mounted on a infinite heatsink , then measured the center of the marking side. maximum r atings and electrical characteristics ( t a =25 o c unless otherwise noted) parameter symbol limit unit maximum repetitive peak reverse voltage v rrm 1 5 0 v maximum rms voltage v rm s 105 v maximum dc blocking voltage v r 15 0 v maximum average forward rectified current per diode per device i f(av) 1 5 3 0 a peak forward surge current : 8.3ms single half sine - wave superimposed on rated load per diode i fsm 2 5 0 a typical thermal resistance per diode (note 1) r j c 2 o c /w operating junction temperature range t j - 55 to +150 o c storage temperature range t stg - 55 to +150 o c 0.419(10.66) 0.387(9.85) 0.156(3.95) 0.147(3.75) 0.058(1.47) 0.042(1.07) 0.038(0.96) 0.019(0.50) 0.100(2.54) 0.100(2.54) 0.196(5.00) 0.163(4.16) 0.054(1.39) 0.045(1.15) 0.115(2.92) 0.080(2.03) 0.025(0.65)max. 0 . 1 7 7 ( 4 . 5 ) m a x . 0 . 5 0 ( 1 2 . 7 ) m i n . 0 . 6 2 4 ( 1 5 . 8 7 ) 0 . 1 4 6 ( 3 . 7 ) 0 . 5 4 8 ( 1 3 . 9 3 ) 0 . 1 3 0 ( 3 . 3 ) p s bt 3 01 5 0 v ct april 21,2015-rev.00 page 2 electrical characteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units breakdown voltage per diode v br i r =0. 5ma t j =25 o c 1 5 0 - - v instantaneous forward voltage per diode v f i f =1a i f = 5 a i f = 1 5 a t j =25 o c - - - 0.49 0.68 0. 7 9 - - 0. 8 4 v i f =1a i f = 5 a t j =125 o c - - 0.4 0. 5 6 - - v reverse current per diode i r v r = 120 v t j =25 o c - 2 .6 - ? ? ? 0 2.5 5 7.5 10 12.5 15 17.5 0 25 50 75 100 125 150 t c , case temperature ( c) i f , forward current (a) per diode 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 i r , reverse current (ma) t j = 25 c t j = 75 c t j = 125 c t j = 150 c fig.3 typical reverse characteristics fig.4 typical forward characteristics fig.1 forward current derating curve fig.2 typical junction capacitance 1 10 100 1000 10000 1 10 100 c j , junction capacitance (pf) v r , reverse bias voltage (v) 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 i f , forward current (a) v f , forward voltage (v) t j = 150 c t j = 125 c t j = 25 c t j = 75 c per diode per diode per diode percent of rated peak reverse voltage (%) p s bt 3 01 5 0 v ct april 2 1 ,2015 - rev.00 page 3 part no_packing code_version s b t 3 01 5 0 v c t_t0_00001 s b t30150v c t _t0_10001 for example : r b500v - 40 _ r2 _ 00 0 01 B serial number B B version co de means hf part no. B packing size code means 13" B packing type means t/r packing code xx version code xxxxx packing type 1 st code packing size code 2 nd code hf or rohs 1 st code 2 nd ~5 th code tape and ammunition box (t/b) a n/a 0 hf 0 serial number tape and reel (t/r) r 7" 1 rohs 1 serial number bulk packing (b/p) b 13" 2 tube packing (t/p) t 26mm x tape and reel (right oriented) (trr) s 52mm y tape and reel (left oriented) (trl) l panasert t/b cathode up (pbcu) u forming f panasert t/b cathode down (pbcd) d p s bt 3 01 5 0 v ct april 2 1 ,2015 - rev.00 page 4 disclaimer |
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