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| to-92 plastic-encapsulate transistors pcr 0.6 a silicon planar pnpn thyristor features current-i gt : 120 a i trms : 0.6 a v drm : 400 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit on state voltage v tm i tm =0.6a 1.7 v gate trigger voltage v gtf v ak =7v 0.8 v repetitive peak off-state voltage v drm i drm = 10a 400 v holding current i h i hl = 20ma , av = 7 v 5 ma a2 5 15 a a1 15 30 a a-1 30 45 a a-2 45 60 a a 60 80 a gate trigger current i gtf b v ar =7v 80 120 a 1 2 3 to-92 1. cathode 2. gate 3. anode tiger electronic co.,ltd
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