document number: 65547 www.vishay.com s11-0225-rev. b, 14-feb-11 1 automotive n-channel 60 v (d-s) 175 c mosfet SQ7002K vishay siliconix features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? aec-q101 qualified d ? esd protection 2000 v ? compliant to rohs directive 2002/95/ec notes a. package limited. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. c. when mounted on 1" square pcb (fr-4 material). d. parametric verification ongoing. product summary v ds (v) 60 r ds(on) ( ? ) at v gs = 10 v 1.30 r ds(on) ( ? ) at v gs = 4.5 v 1.90 i d (a) 0.32 configuration single d g s n-channel mosfet to-236 sot-23 1 2 3 top view SQ7002K (8k)* * marking code 8k g s d ordering information package sot-23 lead (pb)-free and halogen-free SQ7002K-t1-ge3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 continuous drain current a t c = 25 c i d 0.32 a t c = 125 c 0.24 continuous source current (diode conduction) a i s 0.32 pulsed drain current b i dm 0.8 maximum power dissipation b t c = 25 c p d 0.5 w t c = 125 c 0.17 operating junction and storage temperature range t j , t stg - 55 to + 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 350 c/w junction-to-foot (drain) r thjf 300
www.vishay.com document number: 65547 2 s11-0225-rev. b, 14-feb-11 SQ7002K vishay siliconix notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not subj ect to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 60 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 1.8 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 50 a v ds = 0 v, v gs = 12 v - - 1 zero gate voltage drain current i dss v gs = 0 v v ds = 60 v - - 1 a v gs = 0 v v ds = 60 v, t j = 125 c - - 50 v gs = 0 v v ds = 60 v, t j = 175 c - - 150 on-state drain current a i d(on) v gs = 10 v v ds ??? 5 v 0.5 - - a drain-source on-state resistance a r ds(on) v gs = 10 v i d = 0.5 a - 1.07 1.30 ? v gs = 10 v i d = 0.5 a, t j = 125 c - - 2.33 v gs = 10 v i d = 0.5 a, t j = 175 c - - 2.97 v gs = 4.5 v i d = 0.2 a - 1.42 1.90 forward transconductance b g fs v ds = 10 v, i d = 0.2 a - 100 - s dynamic b input capacitance c iss v gs = 0 v v ds = 30 v, f = 1 mhz -1924 pf output capacitance c oss -4.86 reverse transfer capacitance c rss -2.33 total gate charge c q g v gs = 4.5 v v ds = 30 v, i d = 0.25 a -0.91.4 nc gate-source charge c q gs -0.3- gate-drain charge c q gd -0.4- turn-on delay time c t d(on) v dd = 30 v, r l = 150 ? i d ? 0.250 a, v gen = 4.5 v, r g = 120 ? - 14.6 22 ns rise time c t r - 15.3 23 turn-off delay time c t d(off) -8.613 fall time c t f - 10.6 16 source-drain diode ratings and characteristics (t c = 25 c) b pulsed current a i sm --0.8a forward voltage v sd i f = 0.2 a, v gs = 0 v - 0.83 1.2 v
document number: 65547 www.vishay.com s11-0225-rev. b, 14-feb-11 3 SQ7002K vishay siliconix typical characteristics (t a = 25 c, unless otherwise noted) gate current vs. gate-source voltage output characteristics on-resistance vs. drain current gate current vs. gate-source voltage transfer characteristics capacitance 0.000 0.001 0.002 0.003 0.004 0.005 0 6 12 18 24 30 i gss - gate current (a) v gs - gate source voltage (v) t j = 25 c 0.0 0.2 0.4 0.6 0. 8 1.0 012345 v gs =10 v thr u 5 v v gs =4 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs =3 v 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 r ds(on) - on-resistance () i d -drain current (a) v gs = 4.5 v v gs = 10 v 1.0e-10 1.0e-08 1.0e-06 1.0e-04 1.0e-02 1.0e+00 0 6 12 18 24 30 i gss - gate current (a) v gs - gate source voltage (v) t j = 25 c t j = 150 c 0.0 0.2 0.4 0.6 0. 8 1.0 0123456 t c = 25 c t c = 125 c t c =- 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 7 14 21 28 35 0 12 24 36 48 60 c - capacitance (pf) v ds - drain-to-source voltage (v) c iss c oss c rss
www.vishay.com document number: 65547 4 s11-0225-rev. b, 14-feb-11 SQ7002K vishay siliconix typical characteristics (t a = 25 c, unless otherwise noted) gate charge source-drain diode forward voltage threshold voltage on-resistance vs. j unction temperature on-resis tance vs. gate-to- source voltage drain source breakdown vs. junction temperature v gs - gate-to-source voltage (v) q g - total gate charge (nc) 0 1 2 3 4 5 0.0 0.3 0.6 0.9 1.2 1.5 i d = 0.25 a v ds = 30 v 0.001 0.01 0.1 1 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 25 c t j = 150 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s - 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 175 i d = 250 a i d =5ma v ariance ( v ) v gs(th) t j - temperat u re (c) 0.5 0.9 1.3 1.7 2.1 2.5 - 50 - 25 0 25 50 75 100 125 150 175 i d =0.2a v gs =4.5 v v gs =10 v t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) 0 2 4 6 8 10 01234567 8 910 t j =25 c t j = 150 c - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 65 6 8 71 74 77 8 0 - 50 - 25 0 25 50 75 100 125 150 175 i d =1ma v ds - drain-to-so u rce v oltage ( v ) t j -j u nction temperat u re (c)
document number: 65547 www.vishay.com s11-0225-rev. b, 14-feb-11 5 SQ7002K vishay siliconix thermal ratings (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-ambient 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 i d - drain current (a) v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified 100 ms limited by r ds(on) * 1 ms i dm limited t c = 25 c single pulse bvdss limited 10 ms 100 s 1 s 10 s, dc i d limited 10 10 -3 10 -2 1 1 0 600 10 -1 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized ef fective t ransient thermal impedance 1. duty cycle, d = 2. per unit base = r th ja = 350 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
www.vishay.com document number: 65547 6 s11-0225-rev. b, 14-feb-11 SQ7002K vishay siliconix thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-foot note ? the characteristics shown in the two graphs - normalized transient thermal im pedance junction-to-ambient (25 c) - normalized transient thermal impedance junction-to-foot (25 c) are given for general guide lines only to enable the user to get a ?ball park? indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteri stics which are developed from empirical me asurements. the latter is valid for the part mounted on printed circuit board - fr4, size 1" x 1" x 0.062", doubl e sided with 2 oz. copper, 100 % on both sides. the part capabiliti es can widely vary depending on actual applic ation parameters and operating conditions. vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65547 . 10 -3 10 -2 1 10 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized ef fective t ransient thermal impedance
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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