pjp110a pnp epitaxial silicon darlingt ontransistor 1-3 2002/01.rev.a medium po wer linear switching applicatio ns collector current 10a collector dissipation pc =75w (tc = 25 ) device operating temperature package PJP110ACZ -20 +85 to-220 characteristic symbol rating unit collector-base voltage v cbo -20 v collector-emitter voltage v ceo -12 v emitter-base voltage v ebo -7 v collector current ic -10 a collector dissipation pc 75 w junction temperature tj 150 storage temperature tstg -55 ~150 characteristic symbol test condition min typ max unit collector-base breakdown voltage bv cbo ic = -1ma, i e = 0 -20 v collector-emitterbrea kdown voltage bv ceo ic = -10ma, i b =0 -12 v emitter-base brea kdown voltage bv ebo i e = -1ma, i c = 0 -7 v collector cutoff current i cbo v cb = -15v,i e =0 -100 a emitter cutoff current i ebo v eb = -3v,i c =0 -100 a dc current gain h fe 1 v ce = -3v,i c =-6a 110 h fe 2 v ce = -3v,i c = -10a 90 collector-emitter saturation voltage v ce (sat) i c = -6a,i b = -600ma -0.5 v base-emitter saturation voltage v be (sat) i c = -6a, v ce = -4v -1.5 v to-220 pin : 1. base 2. collector 3. emitter absolute maximum ratings (ta = 25 ) electrical characteristics (ta = 25 ) ordering information
pjp110a pnp epitaxial silicon darlingt ontransistor 2-3 2002/01.rev.a dc current gain collector-emitter breakdown voltage collector-base breakdown voltage collector-emitter sat uration voltage
pjp110a pnp epitaxial silicon darlingt ontransistor 3-3 2002/01.rev.a
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