1 of 7 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . ordering information bifet hbt ldmos vbat bias control & pa/v mode enable rf out rf in nc ven vmode vcc cpl in cpl out gnd 5 4 1 2 3 6 7 10 9 8 RF7411 3v wcdma band 1 linear pa module the RF7411 is a high-power, high-efficiency, linear power amplifier designed for use as the final rf amplifier in 3v, 50 ? wcdma mobile cellu- lar equipment and spread-spectrum sy stems. this pa is developed for umts band 1 which operates in the 1920mhz to 1980mhz frequency band. the RF7411 has a digital control pin which enables a low power mode to reduce amplifier gain at lower power levels. the part also has an integrated directional coupler which eliminates the need for an external discrete coupler at the output. the RF7411 (band 1) meets the spectral linearity requirements of high speed downlink packet access (hsdpa), high speed uplink packet access (hsupa), and long term evolution (lte) data transmission. the RF7411 is assembled in a 10-pin, 3mm x 3mm module. features ? hsdpa/hsupa/hspa+/ lte ? high efficiency wcdma operation : 42.5% at p out = +28dbm ? low voltage positive bias supply (3.0v to 4.2v) ? internal voltage regulator - no external (v ref ) required ? two mode power/gain stages with digital control interface ? integrated power coupler ? integrated blocking and decoupling capacitors applications ? wcdma/hspa+/lte wireless data cards ? wcdma/hspa+/lte handsets RF7411 3v wcdma band 1 linear pa module RF7411pcba-410 fully assembled evaluation board ds111206 : nda required ? package style: module, 10-pin, 3mm x 3mm x 1.0mm
2 of 7 RF7411 ds111206 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . absolute maximum ratings parameter rating unit supply voltage in standby mode 6.0 v supply voltage in idle mode 6.0 v supply voltage in operating mode, 50 ? load 6.0 v supply voltage, v bat 6.0 v control voltage, v mode 3.7 v control voltage, v en 3.7 v rf - input power +10 dbm rf - output power +30 dbm operating ambient temperature -30 to +110 c storage temperature -55 to +150 c parameter specification unit condition min. typ. max. recommended operating conditions operating frequency range 1920 1980 mhz v bat +3.0 +3.2 +4.2 v v cc +3.0 1 +3.2 +4.2 v v cc (used with dc-dc) 0.5 +4.2 v pa used with dc-dc converter to reduce current drain at back-off and lower output powers v en 0 0.5 v pa disabled. 1.35 1.80 3.10 v pa enabled. v mode 0 0.5 v logic ?low?. 1.35 1.80 3.10 v logic ?high?. p out maximum linear output (hpm) 28.0 1,2 dbm high power mode (hpm) maximum linear output (lpm) 16 1,2 dbm low power mode (lpm) ambient temperature -20 +25 +85 c notes: 1 for operation at v cc = +3.0v, derate p out by 0.5db. 2 p out is specified for 3gpp (voice) modulation. for hsdpa and hspa+ operation, derate p out by 2db: hsdpa configuration: ? c ? 12, ? d ? 15, ? hs ? 24 hspa+ configuration: 3gpp rel7 subtest 1 caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. ex tended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the device under absolute maximum rating condi- tions is not implied. the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro device s, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. rfmd green: rohs compliant per eu directive 2002/95/ec, halogen free per iec 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder.
3 of 7 RF7411 ds111206 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . parameter specification unit condition min. typ. max. electrical specifications t = +25 ? c, v cc = v bat = +3.2v, v en = +1.8v, 50 ? system, wcdma rel 99 modulation unless other- wise specified. gain 28 db hpm, p out = 28.0dbm 15.5 db lpm, p out ??? 16.0dbm aclr - 5mhz offset -40 -36 dbc hpm, p out = 28.0dbm -44 -38 dbc lpm, p out = 16.0dbm aclr - 10mhz offset -52 -48 dbc hpm, p out = 28.0dbm -60 -48 dbc lpm, p out = 16.0dbm pae 39 42.5 % hpm, p out = 28.0dbm 10 % lpm, p out = 16.0dbm current drain 435 ma hpm, p out = 28.0dbm 116 ma lpm, p out = 16.0dbm quiescent current 50 ma hpm, dc only enable current 0.03 ma source or sink current. v en = 1.8v. mode current (i mode ) 0.01 ma source or sink current. v mode = 1.8v. leakage current 2.1 10.0 ? a dc only. v cc = v bat = 4.2v, v en = v mode = 0.5v. noise power in receive band -137 dbm/hz all power modes, measured at duplex offset fre- quency (f tx + 190mhz). rx: 2110mhz to 2170mhz, p out ??? 28.0dbm input impedance 1.8:1 vswr no ext. matching, p out ??? 28dbm, all modes. harmonic, 2fo -20 -7 dbm p out ??? 28.0dbm, all power modes. harmonic, 3fo -23 -14 dbm p out ??? 28.0dbm, all power modes. spurious output level -60 dbc all spurious, p out ??? 28dbm, all conditions, load vswr ??? 6:1, all phase angles. insertion phase shift -30 9.8 +30 phase shift at 16dbm when switching from hpm to lpm. dc enable time 10 ? s dc only. time from v en = high to stable idle cur- rent (90% of steady state value). rf rise/fall time 6 ? sp out ??? 28.0dbm, all modes. 90% of target, dc set- tled prior to rf. ruggedness 10:1 vswr hpm, p out = 28.0dbm, all phases. coupling factor -20 db p out ??? 28.0dbm, all modes. daisy chain insertion loss 0.25 db cpl_in to cpl_out port, v en = 0.5v coupling directivity 20 db
4 of 7 RF7411 ds111206 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . operating mode truth table package drawing pin function description 1vbat supply voltage for bias circuitry. 2rf in rf input internally matched to 50 ? and dc blocked. the rf input matching circuit has a shunt inductor to ground which would short any dc voltage placed on this pin. 3nc no connection. 4vmode digital control input for power mode sele ction (see operating modes truth table). 5ven digital control input for pa enable and disable (see operating modes truth table). 6 cpl_out coupler output. 7gnd this pin must be grounded. 8 cpl_in coupler input used for cascad ing couplers in series. terminate this pin with a 50 ? resistor if not connected to another coupler. 9rf out rf output internally matched to 50 ?? and dc blocked. 10 vcc supply voltage for the first and second stage amplifiers, which can be connected to battery supply or output of dc-dc converter. pkg base gnd ground connection. the package backside should be soldered to a topside ground pad connecting to the pcb ground plane with multiple ground vias. the pad should have a low thermal resistance and low electrical imped- ance to the ground plane. v en v mode v bat v cc conditions/comments low low 3.0v to 4.2v 3.0v to 4.2v power down mode low x 3.0v to 4.2v 3.0v to 4.2v standby mode high low 3.0v to 4.2v 3.0v to 4.2v high power mode high high 3.0v to 4.2v 3.0v to 4.2v low power mode
5 of 7 RF7411 ds111206 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . application schematic evaluation board schematic v bat vmode1 vmode0 ven 4.7uf v cc 4.7uf (2) notes: (1). the 50 ? resistor should be removed if pin 8 is connected to another coupler for daisy chaining multiple couplers. (2). this capacitance value can be reduced for multi-pa with dc to dc converter applications where a total maximum capacitive load is required to be met. keeping at least a 1uf capacito r close to the pa vcc pin is recommended. (3). a capacitor of at least 10 nf sh ould be placed closed to the pa vcc pin (pin10) for optimum decoupling. rf out cpl out rf in 50 ???? 5 4 1 2 3 6 7 10 9 8 amp bias control & pa/v mode enable 10 nf (3) vcc1 vmode1 vmode0 ven c5 4.7uf vcc2 c6 4.7uf notes: (1). vcc2s is a sense line to be used if the test power supply has voltage sensing capability. this compensates for any resistive voltage drop that occurs between the power supply and the pa and thus ensur es that the voltage at the pa is set as expected. j2 rf out j3 cpl out j1 rf in r2 51 ? 5 4 1 2 3 6 7 10 9 8 amp bias control & pa/v mode enable c4 22uf c8 10nf c7 10nf c9 10nf c10 10nf c11 10nf p1_4 vmode1 p1_5 vcc1 p1_6 p1_7 vcc2 p1_8 vcc2s (1) p1_9 p1_3 vmode0 p1_2 ven p1_1
6 of 7 RF7411 ds111206 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . pcb design requirements pcb surface finish the pcb surface finish used for rfmd's qualification process is electroless nickel, immersion gold. typical thickness is 3 ? inch to 8 ? inch gold over 180 ? inch nickel. pcb land pattern recommendation pcb land patterns for rfmd components are based on ipc-735 1 standards and rfmd empirica l data. the pad pattern shown has been developed and tested for optimized assembly at rf md. the pcb land pattern has been developed to accommodate lead and package tolerances. since surface mount processes va ry from company to company, careful process development is recommended. pcb metal land pattern figure 1. pcb metal land pattern (top view)
7 of 7 RF7411 ds111206 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . pcb solder mask pattern liquid photo-imageable (lpi) solder mask is recommended. the solder mask footprint will match what is shown for the pcb metal land pattern with a 2mil to 3mil expansion to accommodate solder mask regi stration clearance around all pads. the center-grounding pad shall also have a solder mask clearance. expansion of the pads to create solder mask clearance can be provided in the master data or reques ted from the pcb fabrication supplier. thermal pad and via design the pcb land pattern has been designed with a thermal pad th at matches the die paddle size on the bottom of the device. thermal vias are required in the pcb layout to effectively conduct heat away from the package. the via pattern has been designed to address thermal, power dissipation and electrical requirements of the device as well as accommodating routing strategies. the via pattern used for the rfmd qualific ation is based on thru-hole vias with 0. 203mm to 0.330mm finished hole size on a 0.5mm to 1.2mm grid pattern with 0.025mm plating on via walls. if micro vias are used in a design, it is suggested that the quantity of vias be increased by a 4:1 ratio to achieve similar results. figure 2. pcb solder mask pattern (top view)
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