CHM1012PAPT c h e n m k o e n t e r p r i s e c o . , l t d s u r f a c e m o u n t n-channel enhancement mode field effect transistor v o l t a g e 120 volts current 10 ampere a p p l i c a t i o n f e a t u r e * super high dense cell design for extremely low r ds(on) . construction * n-channel enhancement * s e r v o m o t o r c o n t r o l . * p o w e r m o s f e t g a t e d r i v e r s . * o t h e r s w i t c h i n g a p p l i c a t i o n s . 2006-02 * high power and current handing capability. a b s o l u t e m a x i m u m r a t i n g s t a = 2 5 c u n l e s s o t h e r w i s e n o t e d s y m b o l parameter CHM1012PAPT units v dss drain-source voltage 120 v v gss gate-source voltage 20 v i d maximum drain current - continuous a - pulsed p d maximum power dissipation at tc = 25 50 w t stg storage temperature range -55 to 150 c thermal characteristics r q ja thermal resistance, junction-to-ambient 50 10 c/w (note 3) note : 1. surface mounted on fr4 board , t <=10sec 2. pulse test , pulse width <= 300us , duty cycle <= 2% 40 * small package. (to-252a) t j operating temperature range -55 to 150 c 3. repetitive rating , pulse width linited by maximum junction temperature (note 1) 4. guaranteed by design , not subject to production trsting c i r c u i t s d g (1) (2) (3) to-252a to-252a dimensions in inches and (millimeters) .220 (5.59) .195 (4.95) .417 (10.6) .346 (8.80) 1 gate 3 drain( heat sink ) 2 source c .28 0 (7.10) .238 (6.05) .261 (6.63) .213 (5.40) .035 (0.90) .025 (0.64) .102 (2.59 ) .078 (1.98) .094 (2.40) .087 (2.20) .035 (0.89) .018 (0.45) .024 (0.61) .016 (0.40) (3) (2) (1)
rating characteristic curves ( CHM1012PAPT ) e l e c t r i c a l c h a r a c t e r i s t i c s t a = 2 5 c u n l e s s o t h e r w i s e n o t e d s y m b o l p a r a m e t e r c o n d i t i o n s m i n t y p m a x u n i t s o f f c h a r a c t e r i s t i c s o n c h a r a c t e r i s t i c s g fs forward transconductance v ds =10v , i d = 5a r ds(on) static drain-source on-resistance switching characteristics q gs gate-source charge q gd gate-drain charge t on turn-on time ns v dd = 30v i d =10a , v g s = 10 v 60 t r rise time 120 25 b v d s s drain-source breakdown voltage v gs = 0 v, i d = 250 a n a 120 v n a i gssf dss s zero gate voltage drain current i v ds gate-body leakage = gate-body leakage 120 v, v v gs gs = 20v, = 0 v v ds = 0 v a +100 -100 v gs = -20v, v ds = 0 v v gs (th) gate threshold voltage v ds = v gs , i d = 250 a 2 v 80 t f fall time 50 q g total gate charge 16 vds=96v, id=10a vgs=10v turn-off time t off rgen= 51 w (note 2) (note 4) 4 s nc 40 85 56 35 drain-source diode characteristics and maximum ratings 47.5 i v sd drain-source diode forward current drain-source diode forward voltage i s = 10a , v g s = 0 v 10 1.2 a v 5 57 i gssr 5 120 m w vgs=10v, id=10a 100 3 0.85
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