IPG20N10S4L-22A optimos?-t2 power-transistor features ? dual n-channel logic lev el - enhancement mode ? aec q101 qualified ? msl1 up to 260c peak reflow ? 175c operating temperature ? green product (rohs compliant) ? 100% avalanche tested ? feasible for automatic optical inspection (aoi) maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current one channel active 1) i d t c =25c, v gs =10v 20 a t c =100c, v gs =10v 2) 20 pulsed drain current 2) one channel active i d,pulse - 80 avalanche energy, single pulse 2, 4) e as i d =10a 130 mj avalanche current, single pulse 4) i as - 15 a gate source voltage v gs -16v power dissipation one channel active p tot t c =25c 60 w operating and storage temperature t j , t stg - -55 ... +175 c value v ds 100 v r ds(on),max 4) 22 m i d 20 a product summary type package marking IPG20N10S4L-22A pg-tdson-8-10 4n10l22 pg-tdson-8-10 r ev. 1.0 page 1 2013-03-04
IPG20N10S4L-22A parameter symbol conditions unit min. typ. max. thermal characteristics 2) thermal resistance, junction - case r thjc ---2.5k/w smd version, device on pcb r thja minimal footprint - 100 - 6cm 2 cooling area 3) -60- electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0v, i d = 1ma 100 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 25a 1.1 1.6 2.1 zero gate voltage drain current 4) i dss v ds =100v, v gs =0v, t j =25c -0.011a v ds =100v, v gs =0v, t j =125c 2) - 1 100 gate-source leakage current 4) i gss v gs =16v, v ds =0v - - 100 na drain-source on-state resistance 4) r ds(on) v gs =4.5v, i d =10a -2428 m v gs =10v, i d =17a -2022 values r ev. 1.0 page 2 2013-03-04
IPG20N10S4L-22A parameter symbol conditions unit min. typ. max. d y namic characteristics 2) input capacitance 4) c iss - 1350 1755 pf output capacitance 4) c oss - 450 585 reverse transfer capacitance 4) c rss -4284 turn-on delay time t d(on) -5-ns rise time t r -3- turn-off delay time t d(off) -30- fall time t f -18- gate char g e characteristics 2, 4) gate to source charge q gs -4.35.6nc gate to drain charge q gd -4.89.6 gate charge total q g -2127 gate plateau voltage v plateau -3.2-v reverse diode diode continous forward current 2) one channel active i s --20a diode pulse current 2) one channel active i s,pulse --80 diode forward voltage v sd v gs =0v, i f =17a, t j =25c -1.01.3v reverse recovery time 2) t rr v r =50v, i f = i s , d i f /d t =100a/s -55-ns reverse recovery charge 2, 4) q rr - 100 - nc 4) per channel 2) specified by design. not subject to production test. 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 1) current is limited by bondwire; with an r thjc = 2.5k/w the chip is able to carry 36a at 25c. t c =25c values v gs =0v, v ds =25v, f =1mhz v dd =50v, v gs =10v, i d =20a, r g =11 v dd =80v, i d =20a, v gs =0 to 10v r ev. 1.0 page 3 2013-03-04
IPG20N10S4L-22A 1 power dissipation 2 drain current p tot =f( t c ); v gs 6v; one channel active i d =f( t c ); v gs 6v; one channel active 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25c; d =0; one channel active z thjc =f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 0.1 1 10 100 0.1 1 10 100 i d [a] v ds [v] single pulse 0.01 0.05 0.1 0.5 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -2 10 -1 10 0 10 1 z thjc [k/w] t p [s] 0 10 20 30 40 50 60 70 0 50 100 150 200 p tot [w] t c [ c] 0 5 10 15 20 25 0 50 100 150 200 i d [a] t c [ c] r ev. 1.0 page 4 2013-03-04
IPG20N10S4L-22A 5 typ. output characteristics 5) 6 typ. drain-source on-state resistance 5) i d =f( v ds ); t j =25c r ds(on) =f( i d ); t j =25c parameter: v gs parameter: v gs 7 typ. transfer characteristics 5) 8 typ. drain-source on-state resistance 5) i d =f( v gs ); v ds =6v r ds(on) =f( t j ); i d =17a; v gs =10v parameter: t j 10 20 30 40 50 -60 -20 20 60 100 140 180 r ds(on) [m ] t j [ c] 3.5 v 4 v 4.5 v 5 v 10 v 0 20 40 60 80 01234 i d [a] v ds [v] 3.5 v 4 v 4.5 v 5 v 10 v 10 20 30 40 50 60 70 0 20406080 r ds(on) [m ] i d [a] -55 c 25 c 175 c 0 20 40 60 80 12345 i d [a] v gs [v] r ev. 1.0 page 5 2013-03-04
IPG20N10S4L-22A 9 typ. gate threshold voltage 10 typ. capacitances 5) v gs(th) =f( t j ); v gs = v ds c =f( v ds ); v gs =0v; f =1mhz parameter: i d 11 typical forward diode characteristicis 5) 12 avalanche characteristics 5) i f =f(v sd ) i a s =f( t av ) parameter: t j parameter: t j(start) 25 c 100 c 150 c 0.1 1 10 100 1 10 100 1000 i av [a] t av [s] 25 c 175 c 10 0 10 1 10 2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 i f [a] v sd [v] 25a 250a 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 v gs(th) [v] t j [ c] ciss coss crss 10 1 10 2 10 3 10 4 0 5 10 15 20 25 30 c [pf] v ds [v] r ev. 1.0 page 6 2013-03-04
IPG20N10S4L-22A 13 avalanche energy 5) 14 drain-source breakdown voltage e as =f( t j ), i d =10a v br(dss) =f( t j ); i d =1ma 15 typ. gate charge 5) 16 gate charge waveforms v gs =f( q gate ); i d =20a pulsed parameter: v dd v gs q gate v gs(th) q g(th) q gs q gd q sw q g 90 95 100 105 110 -60 -20 20 60 100 140 180 v br(dss) [v] t j [ c] 20v 80 v 0 2 4 6 8 10 12 0 3 6 9 12 15 18 21 24 v gs [v] q gate [nc] 0 20 40 60 80 100 120 140 25 50 75 100 125 150 175 e as [mj] t j [ c] r ev. 1.0 page 7 2013-03-04
IPG20N10S4L-22A published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2011 all rights reserved. legal disclaime r the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the applicat ion of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infi neon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. r ev. 1.0 page 8 2013-03-04
IPG20N10S4L-22A revision history version revision 1.0 changes final data sheet date 04.03.2013 r ev. 1.0 page 9 2013-03-04
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