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BIC702M bias controlled monolithic ic vhf/uhf rf amplifier ade-208-813d (z) 5th. edition mar. 2001 features bias controlled monolithic ic (no external dc biasing voltage on gate1.); to reduce using parts cost & pc board space. high |yfs| ; |yfs| = 29 ms typ. ( f = 1khz) low noise; nf = 1.0 db typ. (at f = 200 mhz), nf = 1.6 db typ. (at f = 900 mhz) withstanding to esd; build in esd absorbing diode. withstand up to 200v at c = 200pf, rs = 0 conditions. provide mini mold package; mpak-4 (sot-143rmod) outline mpak-4 1 4 3 2 1. source 2. gate1 3. gate2 4. drain notes: 1. marking is ?z. 2. BIC702M is individual type number of hitachi bicmic.
BIC702M 2 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v ds 6v gate1 to source voltage v g1s +6 ? v gate2 to source voltage v g2s +6 ? v drain current i d 30 ma channel power dissipation pch 150 mw channel temperature tch 150 c storage temperature tstg ?5 to +150 c electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 6vi d = 200 m a v g2s = 0,v g1 = open gate1 to source breakdown voltage v (br)g1ss +6 v i g1 = +10 m a, v g2s = v ds = 0 gate2 to source breakdown voltage v (br)g2ss +6 v i g2 = +10 m a, v g1s = v ds = 0 gate2 to source cutoff current i g2ss +100 na v g2s = +5v, v g1s = v ds = 0 gate2 to source cutoff voltage v g2s(off) 0.5 0.7 1.0 v v ds = 5v, i d = 100 m a v g1 = open drain current i d(op) 10 13 16 ma v ds = 5v , v g2s = 4v v g1 = open forward transfer admittance |y fs | 242934msv ds = 5v, i d = 13ma v g2s =4v, f = 1khz input capacitance c iss 1.6 2.0 2.3 pf v ds = 5v, v g2s =4v output capacitance c oss 0.7 1.1 1.5 pf v g1 = open reverse transfer capacitance c rss 0.02 0.05 pf f = 1mhz power gain pg1 24 28.5 db v ds = 5v, v g2s =4v v g1 = open noise figure nf1 1.0 1.5 db f = 200mhz power gain pg2 18 23 db v ds = 5v, v g2s =4v v g1 = open noise figure nf2 1.6 2.2 db f = 900mhz
BIC702M 3 test circuits dc biasing circuit for operating characteristic items (i d(op) , |yfs|, ciss, coss, crss, nf, pg) gate 1 source drain gate 2 a i d v g2 v g1 open 200 mhz power gain, noise figure test circuit v g2 input(50 w ) 1000p 36p 1000p l1 v d bicmic rfc output(50 w ) l2 1000p 10p max 1000p 1000p 47k 1sv70 1000p 1000p 1000p 47k 47k v t v t unit : resistance ( w ) capacitance (f) 1sv70 l1 : f 1mm enameled copper wire,inside dia 10mm, 2turns l2 : f 1mm enameled copper wire,inside dia 10mm, 2turns rfc : f 1mm enameled copper wire,inside dia 5mm, 2turns
BIC702M 4 900 mhz power gain, noise figure test circuit input output c2 c1 l1 l2 l3 l4 s g1 g2 r1 c3 r2 rfc c5 c4 d v g2 v d c1, c2 c3 c4, c5 r1 r2 variable capacitor (10pf max) disk capacitor (1000pf) air capacitor (1000pf) 47 k w 4.7 k w : : : : : 26 3 3 l2: 18 10 10 l4: 29 7 7 l3: ( f 1mm copper wire) unit : mm rfc : f 1mm copper wire with enamel 4turns inside dia 6mm 21 10 8 l1: 10
BIC702M 5 200 150 100 50 0 50 100 150 200 channel power dissipation pch (mw) 30 25 20 15 10 5 0 1 23 4 power gain pg (db) v = 5 v v = open f = 200 mhz ds g1 30 25 20 15 10 5 0 1 23 4 power gain pg (db) 5 4 3 2 1 0 1 23 4 noise figure nf (db) v = 5 v v = open f = 200 mhz ds g1 v = 5 v v = open f = 900 mhz ds g1 maximum channel power dissipation curve ambient temperature ta ( c) power gain vs. gate2 to source voltage gate2 to source voltage v (v) g2s gate2 to source voltage v (v) g2s power gain vs. gate2 to source voltage gate2 to source voltage v (v) g2s noise figure vs. gate2 to source voltage
BIC702M 6 5 4 3 2 1 0 1 23 4 noise figure nf (db) 30 25 20 15 10 5 0 1 23456 7 power gain pg (db) v = 5 v v = open f = 900 mhz ds g1 g2s v = 4 v v = open f = 200 mhz g1 0 23456 7 noise figure nf (db) 4 3 2 1 30 25 20 15 10 5 0 1 23456 7 power gain pg (db) g2s v = 4 v v = open f = 200 mhz g1 1 g2s v = 4 v v = open f = 900 mhz g1 noise figure vs. gate2 to source voltage gate2 to source voltage v (v) g2s power gain vs. drain to source voltage drain to source voltage v (v) ds power gain vs. drain to source voltage drain to source voltage v (v) ds drain to source voltage v (v) ds noise figure vs. drain to source voltage
BIC702M 7 0 23456 7 noise figure nf (db) 4 3 2 1 noise figure vs. drain to source voltage gain reduction gr (db) 4 0 10 20 30 40 50 3 2 10 gain reduction vs. gate2 to source voltage v = 5 v v = open v = 4 v f = 200 mhz ds g1 g2s g2s v = 4 v v = open f = 900 mhz g1 gain reduction gr (db) 4 0 10 20 30 40 50 3 2 10 gain reduction vs. gate2 to source voltage ds g1 g2s v = 5 v v = open v = 4 v f = 900 mhz input capacitance ciss (pf) 4 3 2 1 0 12 34 v = 4 v v = open f = 1 mhz ds g1 drain to source voltage v (v) ds gate2 to source voltage v (v) g2s gate2 to source voltage v (v) g2s input capacitance vs. gate2 to source voltage gate2 to source voltage v (v) g2s
BIC702M 8 10 5 4 3 2 1.5 1 .8 - 2 - 3 - 4 - 5 -10 .6 .4 .2 0 - .2 - .4 - .6 - .8 - 1 - 1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 scale: 1 / div. 0 30 60 90 120 150 180 - 150 - 90 - 60 - 30 - 120 scale: 0.004/ div. 0 30 60 90 120 150 180 - 150 - 90 - 60 - 30 - 120 10 5 4 3 2 1.5 1 .8 - 2 - 3 - 4 - 5 -10 .6 .4 .2 0 - .2 - .4 - .6 - .8 - 1 - 1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 test condition: 50 to 1000 mhz (50 mhz step) test condition: 50 to 1000 mhz (50 mhz step) test condition: 50 to 1000 mhz (50 mhz step) test condition: 50 to 1000 mhz (50 mhz step) s11 parameter vs. frequency s21 parameter vs. frequency s12 parameter vs. frequency s22 parameter vs. frequency ds g1 v = 5 v , v = open v = 4 v , zo = 50 g2s w ds g1 v = 5 v , v = open v = 4 v , zo = 50 g2s w ds g1 v = 5 v , v = open v = 4 v , zo = 50 g2s w ds g1 v = 5 v , v = open v = 4 v , zo = 50 g2s w
BIC702M 9 sparameter (v ds = 5 v, v g2s = 4 v, v g1 = open, zo = 50 w ) s11 s21 s12 s22 f (mhz) mag ang mag ang mag ang mag ang 50 0.998 -3.3 2.80 175.9 0.00106 58.8 0.990 -2.4 100 0.993 -7.2 2.78 170.9 0.00171 75.7 0.992 -4.7 150 0.991 -10.9 2.77 166.1 0.00253 75.1 0.991 -7.2 200 0.984 -15.0 2.74 161.2 0.00356 77.4 0.987 -9.6 250 0.978 -19.0 2.72 156.5 0.00442 78.2 0.985 -12.2 300 0.970 -22.8 2.68 151.8 0.00485 80.0 0.982 -14.7 350 0.958 -26.7 2.64 147.2 0.00576 74.7 0.978 -17.1 400 0.954 -30.3 2.60 142.7 0.00642 71.7 0.973 -19.6 450 0.945 -33.8 2.56 138.6 0.00689 73.3 0.968 -22.0 500 0.932 -37.5 2.50 134.1 0.00712 71.8 0.963 -24.2 550 0.920 -40.6 2.46 129.8 0.00765 70.7 0.958 -26.7 600 0.910 -44.3 2.41 125.7 0.00804 69.9 0.952 -28.9 650 0.900 -47.5 2.37 121.6 0.00798 69.1 0.947 -31.3 700 0.887 -50.9 2.31 117.8 0.00787 67.8 0.942 -33.4 750 0.870 -54.4 2.27 113.6 0.00785 70.8 0.936 -35.8 800 0.863 -57.6 2.22 110.0 0.00758 73.3 0.929 -37.9 850 0.853 -60.9 2.18 105.8 0.00721 75.2 0.924 -40.3 900 0.839 -63.6 2.12 102.2 0.00694 75.8 0.917 -42.5 950 0.827 -66.5 2.07 98.6 0.00716 88.1 0.912 -44.5 1000 0.819 -70.1 2.04 94.9 0.00667 92.7 0.906 -46.7
BIC702M 10 package dimensions 0.16 0 ?0.1 + 0.1 ?0.06 0.95 0.85 1.8 0.2 0.65 1.5 0.15 0.65 1.1 + 0.2 ?0.1 0.95 0.95 1.9 0.2 2.95 0.2 0.4 + 0.1 ?0.05 0.6 + 0.1 ?0.05 2.8 + 0.2 ?0.6 0.3 0.4 + 0.1 ?0.05 hitachi code jedec eiaj mass (reference value) mpak-4 conforms 0.013 g 0.4 + 0.1 ?0.05 as of january, 2001 unit: mm
BIC702M 11 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0

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