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K20J60 HCPL0534 E101MPD IRLZ34N 60030 337M0 ATMEGA88 T14N03
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  smd type diodes unit: mm sod-323 1.7 +0.1 -0.1 2.6 +0.1 -0.1 1.3 +0.1 -0.1 0.1 +0.05 -0.02 0.475 0.375 0.3 +0.05 -0.05 0.85 +0.05 -0.05 1.0max silicon epitaxial planar diode 1SV231 features high capacitance ratio:c2v/c25v = 8(typ.) excellent c-v characteristics,and small tracking error. useful for small size tuner. absolute maximum ratings ta = 25 parameter symbol value unit reverse voltage v r 30 v peak reverse voltage v rm 35(r l =10k ) v junction temperature t j 125 storage temperature range t stg -55 to +125 electrical characteristics ta = 25 parameter symbol conditions min typ max unit reverse voltage v r i r =1 a 30 v reverse current i r v r = 28 v 10 na c 2v f=1mhz;v r = 2 v 41 45 49.5 c 25v f=1mhz;v r =25v2.733.4 capacitance ratio c 2v /c 25v 14 15 series resistance r s v r =5v,f=470mhz 1.05 1.25 note : available in matched group for capacitance to 2.5%. c(max.)-c(min.) c(min.) (v r =2~25v) capacitance pf 0.025 marking marking ta


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