eur , o ne. 20 stern ave. springfield, new jersey 07081 us a bdw42* - npn, bdw46, BDW47* - pnp telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 darlington complementary silicon power transistors this series of plastic, medium-power silicon npn and pnp darlington transistors are designed for general purpose and low speed switching applications. features ? high dc current gain - hfe = 2500 (typ) @ ic = 5.0 adc. ? collector emitter sustaining voltage @ 30 madc: vceo(sus) = 80 vdc (mm) - bdw46 100 vdc (min.) - bdw42/BDW47 ? low collector emitter saturation voltage vce(sat) = 2.0 vdc (max) @ ic = 5.0 adc 3.0 vdc (max) r ic = 10.0 adc ? monolithic construction with built-in base emitter shunt resistors ? to-220ab compact package maximum ratings rating collector-emitter voltage bdw46 bdw42, BDW47 collector-base voltage bdw46 bdw42, BDW47 emitter-base voltage collector current base current total device dissipation @ tc = 25 c derate above 25c operating and storage junction temperature range symbol vceo vcb veb ic ib pd tj. tstg value 80 100 80 100 5.0 15 0.5 85 0.68 -55 to +150 unit vdc vdc vdc adc adc w w/c "c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. thermal characteristics characteristic thermal resistance, junction-to-case symbol r8jc max 1.47 unit c/w 15 a darlington complementary silicon power transistors 80-100 v, 85 w marking diagram to-220ab o bdwxx yyww nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
bdw42* - npn, bdw46, BDW47* - pnp electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol min max unit off characteristics collector emitter sustaining voltage (note 1) (lc = 30 madc, ib = 0) bdw46 bdw42/BDW47 collector cutoff current (vce = 40 vdc, ib = 0) bdw46 (vce = 50 vdc, ib = 0) bdw42/BDW47 collector cutoff current (vcb = 80 vdc, ie = 0) bdw46 (vcb = 1 00 vdc, ie = 0) bdw42/BDW47 emitter cutoff current (vbe = 5.0 vdc, lc = 0) vceo(sus) 'ceo icbo 'ebo 80 100 : : " - 2.0 2.0 1.0 1.0 2.0 vdc madc madc madc on characteristics (note 1) dc current gain (lc = 5.0 adc, vce = 4.0 vdc) (lc = 10 adc, vce = 4.0 vdc) collector-emitter saturation voltage (lc = 5.0adc, ib = 10 madc) (lc = 10 adc, ib = 50 madc) base-emitter on voltage (lc = 10 adc, vce = 4.0 vdc) hfe vce(sat) vbe(on) 1000 250 - - - - - 2.0 3.0 3.0 vdc vdc second breakdown (note 2) second breakdown collector current with base forward biased bdw42 vce = 28.4 vdc vce = 40 vdc bdw46/BDW47 vce = 22.5 vdc vce = 36 vdc is/b 3.0 1.2 3.8 1.2 - adc dynamic characteristics magnitude of common emitter small signal short circuit current transfer ratio (lc = 3.0 adc, vce = 3.0 vdc, f = 1 .0 mhz) output capacitance (vcb = 10 vdc, ie = 0, f = 0.1 mhz) bdw42 bdw46/BDW47 small-signal current gain (lc = 3.0 adc, vce = 3.0 vdc, f = 1 .0 khz) ft cob hfe 4.0 - 300 ~ 200 300 ? mhz pf 1. pulse test: pulse width = 300 jis, duty cycle = 2.0%. 2. pulse test non repetitive: pulse width = 250 ms.
|
