CHX2193 rohs compliant ref. : dsCHX21930036 - 05 feb 10 1/6 specificatio ns subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 orsay cede x france tel. : +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 7.5-15ghz frequency multiplier gaas monolithic microwave ic description the CHX2193 is a frequency multiplier by 2 monolithic circuit. it is designed for a wide range of applications, from military to commercial communication systems. the backside of the chip is both rf and dc ground. this helps to simplify the assembly process. the circuit is manufactured with a phemt process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. main features broadband performance: 6.25-8.25 ghz 12dbm output power for +12dbm input power dc power consumption, 60ma @ 3.5v (with rf) chip size: 1.62 x 0.89 x 0.10 mm main characteristics tamb. = 25c symbol parameter min typ max unit f in input frequency range 6.25 8.25 ghz f out output frequency range 12.5 16.5 ghz p in input power 12 dbm p out output power for +12dbm input power 10 12 16 dbm esd protection : electrostatic discharge sensitive device. observe handling precautions !
CHX2193 7.5- 15ghz frequency multiplier ref. : dsCHX21930036 - 05 feb 10 2/6 specificatio ns subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 electrical characteristics t amb = +25c, v g1 = -0.9v, v g2 adjusted for i d = 60ma under rf, p in =+12dbm symbol parameter min typ max unit f in input frequency range 6.25 8.25 ghz f out output frequency range 12.5 16.5 ghz p in input power 12 dbm p out output power for +12 dbm input power 10 12 16 dbm i s /f o f in level at the output ( 6.25 < f in < 8.25ghz ), for +12dbm input power -8 -16 -30 dbm vswr in input vswr 2.5:1 vswr out output vswr 2.5:1 v d drain bias voltage 3.5 v i d bias current (with rf) 60 ma a wire bond of typically 0.1 to 0.15nh will improve the input and output matching. absolute maximum ratings tamb = +25c symbol parameter values unit v d drain bias voltage 4.0 v i d drain bias current 150 ma t a operating temperature range (1) -40 to +85 c t stg storage temperature range -55 to +125 c operation of device above anyone of these parameter s may cause permanent damage. (1) reference: backside of the chip
7.5-15ghz frequency multiplier CHX2193 ref. : dsCHX21930036 - 05 feb 10 3/6 specificatio ns subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical on wafer measurements bias conditions: t amb = +25c, v d = 3.5v v g1 = -0.9v v g2 adjusted for id = 60ma under rf, p in =+12dbm -26 -22 -18 -14 -10 -6 -2 2 6 10 14 18 6 6.5 7 7.5 8 8.5 frequency (ghz) output power (dbm) pout@fin pout@2fin bias conditions: t amb = +25c, v d = 3.5v, v g1 = -0.9v, v g2 adjusted for id = 60ma under rf, f in =6.5ghz C 7.5ghz C 8.5ghz 7 8 9 10 11 12 13 14 15 16 17 18 6 7 8 9 10 11 12 13 14 input power (dbm) harmonic 2 output power (dbm) pout@13ghz pout@15ghz pout@17ghz
CHX2193 7.5- 15ghz frequency multiplier ref. : dsCHX21930036 - 05 feb 10 4/6 specificatio ns subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical in test fixture measurements bias conditions: t amb = +25c, v d = 3.5v v g2 adjusted for i d = 60ma under rf p in =+10dbm harmonics output power versus gate voltage v g1 -30 -26 -22 -18 -14 -10 -6 -2 2 6 10 14 18 5 6 7 8 9 10 frequency (ghz) output power (dbm) pout @fin pout @2fin pout @3fin pout @4fin pout @5fin x2 gate voltage v g1 = -0.8v -30 -26 -22 -18 -14 -10 -6 -2 2 6 10 14 18 5 6 7 8 9 10 frequency (ghz) output power (dbm) pout@fin pout@2fin pout@3fin pout@4fin pout@5fin x2 gate voltage v g1 = -0.9v -30 -26 -22 -18 -14 -10 -6 -2 2 6 10 14 18 5 6 7 8 9 10 frequency (ghz) output power (dbm) pout@fin pout@2fin pout@3fin pout@4fin pout@5fin x2 gate voltage v g1 = -1.0v
7.5-15ghz frequency multiplier CHX2193 ref. : dsCHX21930036 - 05 feb 10 5/6 specificatio ns subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 chip assembly and mechanical data 100pf 100pf 100pf 10nf 10nf 10nf vg1 voltage vd voltage input / output bonding wires as short as possible as short as possible input / output bonding wires vg2 voltage note: supply feed should be capacitively bypassed. 25 m m diameter gold wire is to be prefered. bonding pad positions. (chip thickness: 100m. all dimensions are in micro meters)
CHX2193 7.5- 15ghz frequency multiplier ref. : dsCHX21930036 - 05 feb 10 6/6 specificatio ns subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 ordering information chip form : CHX2193-99f/00 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by impli cation or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and re places all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or s ystems without express written approval from united monolithic semiconductors s.a.s.
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