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pe4152 document category: product specification ultracmos? quad mosfet mixer ?2015C2016, peregrine semiconductor corporation. all rights reserv ed. ? headquarters: 9380 carroll park drive, san diego, ca, 9 2121 product specification doc-64061-3 C (02/2016) www.psemi.com features ? quad mosfet array with integrated lo enable and bypass mode ? ultra high linearity in both lo modes ? lo enable: 25 dbm iip3, 52 dbm iip2 ? lo bypass: 24 dbm iip3, 46 dbm iip2 ? high isolation in both lo modes ? lo enable: 30/30 db lo?rf/if ? lo bypass: 60/58 db lo?rf/if ? low conversion loss in both lo modes ? packaging ? 20-lead 4 4 0.85 mm qfn applications ? land-mobile-radio (lmr) ? portable radio ? mobile radio ? cellular infrastructure ? set-top box (stb )/catv systems product description the pe4152 is a high linearity quad metal-oxide-semiconductor field-effect transistor (mosfet) mixer with an integrated local oscillator (lo) amplifier. the lo amplifie r allows for lo input drive levels of less than 0 dbm to produce third-order intercept point (iip3) values similar to a quad mosfet array driven with a 15 dbm lo drive. the pe4152 operates with differential signals at the radio frequency (rf) and intermediate frequency (if) ports and the integrated lo buffer amplifier drives the mixer core. it can be used as an upconverter or a downcon- verter. the pe4152 also offers an integrated lo amplifier bypa ss option providing additional flexibility for low power or increased linearity operation. the bypassed lo amplifier allo ws superior lo to rf and lo to if isolation levels relative to the enabled mode. the pe4152 is manufactured on peregrine?s ultracmos ? process, a patented variation of silicon-on-insulator (soi) technology on a sapphire substrate, offering the perf ormance of gaas with the economy and integration of conventional cmos. figure 1 ? pe4152 functional diagram rf lo v dd if gnd en mixbias (optional)
pe4152 quad mosfet mixer page 2 doc-64061-3 C (02/2016) www.psemi.com absolute maximum ratings exceeding absolute maximum ratings listed in table 1 may cause permanent damage. operation should be restricted to the limits in table 2 . operation between operating range maximum and absolute maximum for extended periods may reduce reliability. esd precautions when handling this ultracmos device, observe the same precautions as with any other esd-sensitive devices. although this device contains circuitry to protect it from damage due to esd, precautions should be taken to avoid exceeding the rating specified in table 1 . latch-up immunity unlike conventional cmos devices, ultracmos devices are immune to latch-up. recommended operating conditions table 2 lists the recommending operating conditions for the pe4152. devices should not be operated outside the recommended operating conditions listed below. table 1 ? absolute maximum ratings for pe4152 parameter/condition min max unit supply voltage, v dd 4.0 v maximum dc plus peak ac across drain-source 3.3 v maximum dc current across drain-source 6ma maximum ac current across drain-source 36 ma p-p storage temperature range ?65 +150 c operating junction temperature +125 c esd voltage hbm, all pins (*) 1000 v note: * human body model (mil-std 883 method 3015). table 2 ? recommended operating conditions for pe4152 parameter min typ max unit supply voltage, v dd 2.9 3.1 v operating temperature range ?40 +85 c lo input power (lo enable) ?10 ?6 dbm lo input power (lo bypass) 23 dbm rf input power (lo enable) 2dbm rf input power (lo bypass) 2dbm
pe4152 quad mosfet mixer doc-64061-3 C (02/2016) page 3 www.psemi.com electrical specifications table 3 and table 4 provide the pe4152 key electrical specifications @ +25 c, v dd = 3.0v, unless otherwise specified. table 3 ? pe4152 electrical specificationslo enable mode parameter condition min typ max unit lo enable mode current drain a function of frequency 9.5 16 ma off state leakage current 20 a rf input frequency vhf band uhf1 band uhf2 band 700 mhz 800 mhz 900 mhz 136 380 450 764 851 935 174 470 520 776 870 941 mhz mhz mhz mhz mhz mhz lo frequency vhf band uhf1 band uhf2 band 700 mhz 800 mhz 900 mhz 245.65 270.35 340.35 873.65 741.35 825.35 283.65 360.35 410.35 885.65 760.35 831.35 mhz mhz mhz mhz mhz mhz if output frequency 109.65 mhz lo input power ?10 ?6 dbm rf input power 2dbm conversion loss (1) vhf, uhf1, uhf2 700, 800 and 900 mhz 6.5 7.5 8.0 8.7 db db input ip3 (2) 20 25 dbm input ip2 (3) vhf, uhf1, uhf2 700, 800 and 900 mhz 41 35 52 50 dbm dbm rf to if isolation (4) vhf, uhf1, uhf2 700, 800 and 900 mhz 35 25 45 45 db db lo to if isolation 18 30 db lo to rf isolation 25 30 db notes: 1) measured with a 1:1 balun on the rf and if ports. 2) measured with two tones at 2 dbm, 100 khz spacing. 3) measured with half-if method. 4) measured with an input frequency equal with if.
pe4152 quad mosfet mixer page 4 doc-64061-3 C (02/2016) www.psemi.com table 4 ? pe4152 electrical specificationslo bypass mode parameter condition min typ max unit lo bypass mode off state leakage current 20 a rf input frequency vhf band uhf1 band uhf2 band 700 mhz 800 mhz 900 mhz 136 380 450 764 851 935 174 470 520 776 870 941 mhz mhz mhz mhz mhz mhz lo frequency vhf band uhf1 band uhf2 band 700 mhz 800 mhz 900 mhz 245.65 270.35 340.35 873.65 741.35 825.35 283.65 360.35 410.35 885.65 760.35 831.35 mhz mhz mhz mhz mhz mhz if output frequency 109.65 mhz lo input power 23 dbm rf input power 2dbm conversion loss (1) vhf, uhf1, uhf2 700, 800 and 900 mhz 6.5 7.5 8.0 8.7 db db input ip3 (2) vhf, uhf1, uhf2 700, 800 and 900 mhz 24 19 26 24 dbm dbm input ip2 (3) vhf, uhf1, uhf2 700, 800 and 900 mhz 46 46 dbm dbm rf to if isolation (4) vhf, uhf1, uhf2 700, 800 and 900 mhz 38 38 db db lo to if isolation 30 58 db lo to rf isolation 35 60 db notes: 1) measured with a 1:1 balun on the rf and if ports. 2) measured with two tones at 2 dbm, 100 khz spacing. 3) measured with half-if method. 4) measured with an input frequency equal with if.
pe4152 quad mosfet mixer doc-64061-3 C (02/2016) page 5 www.psemi.com typical performance data figure 2 ? figure 23 show the typical performance data @ +25 c, v dd = 3.0v, unless otherwise specified. figure 2 ? conversion loss vs lo power (lo enable) 0 1 2 3 4 5 6 7 8 9 10 100 200 300 400 500 600 700 800 900 1000 loss [db] rf frequency [mhz] lo power = -10 dbm lo power = -6 dbm figure 3 ? conversion loss vs v dd (lo enable) 0 1 2 3 4 5 6 7 8 9 10 100 200 300 400 500 600 700 800 900 1000 loss [db] rf frequency [mhz] v dd = 2.9v v dd = 3v v dd = 3.1v
pe4152 quad mosfet mixer page 6 doc-64061-3 C (02/2016) www.psemi.com figure 4 ? conversion loss vs temperature (lo enable) 0 1 2 3 4 5 6 7 8 9 10 100 200 300 400 500 600 700 800 900 1000 loss [db] rf frequency [mhz] -40 c +25 c +85 c figure 5 ? conversion loss vs lo power (lo bypass enable) 0 1 2 3 4 5 6 7 8 9 100 200 300 400 500 600 700 800 900 1000 loss [db] rf frequency [mhz] lo power = 20 dbm lo power = 23 dbm
pe4152 quad mosfet mixer doc-64061-3 C (02/2016) page 7 www.psemi.com figure 6 ? conversion loss vs v dd (lo bypass enable) 0 1 2 3 4 5 6 7 8 9 100 200 300 400 500 600 700 800 900 1000 loss [db] rf frequency [mhz] v dd = 2.9v v dd = 3v v dd = 3.1v figure 7 ? conversion loss vs temperature (lo bypass enable) 0 1 2 3 4 5 6 7 8 9 100 200 300 400 500 600 700 800 900 1000 loss [db] rf frequency [mhz] -40 c 25 c 85 c
pe4152 quad mosfet mixer page 8 doc-64061-3 C (02/2016) www.psemi.com figure 8 ? iip2 / iip3 vs lo power (lo bypass) 0 10 20 30 40 50 60 70 100 200 300 400 500 600 700 800 900 1000 iip2 / iip3 [dbm] rf frequency [mhz] iip2 w/ lo power = 20 dbm iip2 w/ lo power = 23 dbm iip3 w/ lo power = 20 dbm iip3 w/ lo power = 23 dbm figure 9 ? iip2 / iip3 vs temperature (lo bypass) 0 10 20 30 40 50 60 70 100 200 300 400 500 600 700 800 900 1000 iip2 / iip3 [dbm] rf frequency [mhz] iip2 @ -40 c iip2 @ +25 c iip2 @ +85 c iip3 @ -40 c iip3 @ +25 c iip3 @ +85 c
pe4152 quad mosfet mixer doc-64061-3 C (02/2016) page 9 www.psemi.com figure 10 ? iip2 / iip3 vs lo power (lo enable) 0 10 20 30 40 50 60 70 100 200 300 400 500 600 700 800 900 1000 iip2 / iip3 [dbm] rf frequency [mhz] iip2 w/ lo power = -10 dbm iip2 w/ lo power = -6 dbm iip3 w/ lo power = -10 dbm iip3 w/ lo power = -6 dbm figure 11 ? iip2 / iip3 vs temperature (lo enable) 0 10 20 30 40 50 60 70 100 200 300 400 500 600 700 800 900 1000 iip2 / iip3 [dbm] rf frequency [mhz] iip2 @ -40 c iip2 @ +25 c iip2 @ +85 c iip3 @ -40 c iip3 @ +25 c iip3 @ +85 c
pe4152 quad mosfet mixer page 10 doc-64061-3 C (02/2016) www.psemi.com figure 12 ? loCif isolation vs lo power (lo bypass) 0 10 20 30 40 50 60 70 80 100 200 300 400 500 600 700 800 900 1000 isolation [db] rf frequency [mhz] lo power = 20 dbm lo power = 23 dbm figure 13 ? loCif isolation vs temperature (lo bypass) 0 10 20 30 40 50 60 70 80 100 200 300 400 500 600 700 800 900 1000 isolation [db] rf frequency [mhz] -40 c 25 c 85 c
pe4152 quad mosfet mixer doc-64061-3 C (02/2016) page 11 www.psemi.com figure 14 ? loCif isolation vs lo power (lo enable) 0 5 10 15 20 25 30 35 40 45 100 200 300 400 500 600 700 800 900 1000 isolation [db] rf frequency [mhz] lo power = -10 dbm lo power = -6 dbm figure 15 ? loCif isolation vs temperature (lo enable) 0 5 10 15 20 25 30 35 40 45 100 200 300 400 500 600 700 800 900 1000 isolation [db] rf frequency [mhz] -40 c +25 c +85 c
pe4152 quad mosfet mixer page 12 doc-64061-3 C (02/2016) www.psemi.com figure 16 ? loCrf isolation vs lo power (lo bypass) 0 10 20 30 40 50 60 70 80 90 100 200 300 400 500 600 700 800 900 1000 isolation [db] rf frequency [mhz] lo power = 20 dbm lo power = 23 dbm figure 17 ? loCrf isolation vs temperature (lo bypass) 0 10 20 30 40 50 60 70 80 90 100 200 300 400 500 600 700 800 900 1000 isolation [db] rf frequency [mhz] -40 c +25 c +85 c
pe4152 quad mosfet mixer doc-64061-3 C (02/2016) page 13 www.psemi.com figure 18 ? loCrf isolation vs lo power (lo enable) 0 10 20 30 40 50 60 100 200 300 400 500 600 700 800 900 1000 isolation [db] rf frequency [mhz] lo power = -10 dbm lo power = -6 dbm figure 19 ? loCrf isolation vs temperature (lo enable) 0 10 20 30 40 50 60 100 200 300 400 500 600 700 800 900 1000 isolation [db] rf frequency [mhz] -40 c +25 c +85 c
pe4152 quad mosfet mixer page 14 doc-64061-3 C (02/2016) www.psemi.com figure 20 ? rfCif isolation vs lo power (lo bypass) 0 10 20 30 40 50 60 100 200 300 400 500 600 700 800 900 1000 isolation [db] rf frequency [mhz] lo power = 20 dbm lo power = 23 dbm figure 21 ? rfCif isolation vs temperature (lo bypass) 0 10 20 30 40 50 60 100 200 300 400 500 600 700 800 900 1000 isolation [db] rf frequency [mhz] -40 c 25 c 85 c
pe4152 quad mosfet mixer doc-64061-3 C (02/2016) page 15 www.psemi.com figure 22 ? rfCif isolation vs lo power (lo enable) 0 10 20 30 40 50 60 100 200 300 400 500 600 700 800 900 1000 isolation [db] rf frequency [mhz] lo power = -10 dbm lo power = -6 dbm figure 23 ? rfCif isolation vs temperature (lo enable) 0 10 20 30 40 50 60 100 200 300 400 500 600 700 800 900 1000 isolation [db] rf frequency [mhz] -40 c +25 c +85 c
pe4152 quad mosfet mixer page 16 doc-64061-3 C (02/2016) www.psemi.com evaluation kit the pe4152 evaluation board (evb) was designed to ease customer evaluation of the pe4152 mixer. the evb is assembled with a pe4152 field-effect transistor (f et) mixer, baluns, headers and subminiature version a (sma) connectors. v dd is applied to the device at j11. the lo bypass mode is selected by applying an active high signal to pin 6 via jumper j15 as show in figure 24 . the baluns have been selected to provide uniform amplitude and phase balance across the 100 to 1000 mhz frequency range. the pcb design should use proper rf layout techniques for best performance. the signal lines should have 50? impedence and the package ground (exposed paddle) should be connected directly to the ground plane. figure 24 ? evaluation kit layout for pe4152
pe4152 quad mosfet mixer doc-64061-3 C (02/2016) page 17 www.psemi.com pin information this section provides pinout information for the pe4152. figure 25 shows the pin map of this device for the available package. table 5 provides a description for each pin. figure 25 ? pin configuration (top view) exposed ground pad gnd lo_m lo_p nc nc mixbias gnd rf_m rf_p gnd gnd v dd v dd nc nc en v dd if_p gnd if_m 1 3 2 4 5 15 13 14 12 11 6 7 8 9 10 20 19 18 17 16 pin 1 dot marking table 5 ? pin descriptions for pe4152 pin no. pin name description 1, 9, 11, 14, 20 gnd ground 2 lo_m minus lo output 3 lo_p positive lo output 4, 5, 16, 17 nc no connect 6en lo enable (active low) 7, 18, 19 v dd supply voltage 8 if_p positive if port 10 if_m minus if port 12 rf_p positive rf input 13 rf_m minus rf port 15 mixbias (*) external mixer bias pad gnd exposed pad: ground for proper oper- ation note: * for applications where the dc level of the rf and if ports are not at 0v, the mixbias pin can be set to the equivalent dc bias level. for example, if the rf and if signals are biased at 1 vdc, a 1v level can be applied to the mixbias pin. this will maintain the rf performance similar to the 0v case. the mixbias pin can be used in both lo states.
pe4152 quad mosfet mixer page 18 doc-64061-3 C (02/2016) www.psemi.com packaging information this section provides packaging data including the moisture sensitivity level, package drawing, package marking information and tape-and-reel information. moisture sensitivity level the moisture sensitivity level rating for the pe4152 in the 20-lead 4 4 0.85 mm qfn package is msl1. package drawing top-marking specification figure 26 ? package mechanical drawing for 20-lead 4 4 0.85 mm qfn figure 27 ? package marking specifications for pe4152 top view bottom view side view 4.00 4.00 0.850.05 pin #1 corner recommended land pattern 0.50 2.150.05 0.550.05 (x20) 2.150.05 0.18 0.435 sq ref 0.28 (x20) 0.75 (x20) 0.50 4.40 4.40 2.20 2.20 a 0.10 c (2x) c 0.10 c 0.05 c seating plane b 0.10 c (2x) 0.10 c a b 0.05 c all features 0.05 0.203 0.230.05 (x20) 2.00 0.18 1 5 6 10 11 15 16 20 = yy = ww = zzzzzz = pin 1 indicator last two digits of assembly year assembly work week assembly lot code (maximum six characters) 4152 yyww zzzzzz
pe4152 quad mosfet mixer doc-64061-3 C (02/2016) page 19 www.psemi.com tape and reel specification figure 28 ? tape and reel specifications for 20-lead 4 4 0.85 mm qfn t k0 a0 b0 p0 p1 d1 a section a-a a direction of feed d0 e w0 p2 see note 3 see note 1 f see note 3 a0 b0 k0 d0 d1 e f p0 p1 p2 t w0 3.30 3.30 1.10 1.50 + 0.1/ -0.0 1.5 min 1.75 0.10 5.50 0.05 4.00 8.00 2.00 0.05 0.30 0.05 12.00 0.3 device orientation in tape pin 1 notes: 1. 10 sprocket hole pitch cumulative tolerance 0.2 2. camber in compliance with eia 481 3. pocket position relative to sprocket hole measured as true position of pocket, not pocket hole
pe4152 quad mosfet mixer product specification www.psemi.com doc-64061-3 C (02/2016) document categories advance information the product is in a formative or design stage. the datasheet contains design target specifications for product development. specifications and features may change in any manner without notice. preliminary specification the datasheet contains preliminary data. additional data may be added at a later date. peregrine reserves the right to change specifications at any time without notice in order to supply the best possible product. product specification the datasheet contains final data. in the event peregrine decides to change the specifications, peregri ne will notify customers of the intended changes by issuing a cnf (customer notification form). product brief this document contains a shortened version of the datasheet. for the full datasheet, contact sales@psemi.com. not recommended for new designs (nrnd) this product is in production but is not recommended for new designs. end of life (eol) this product is currently going th rough the eol process. it has a specific last-time buy date. obsolete this product is discontinued. orde rs are no longer accepted for this product. sales contact for additional information, contact sales at sales@psemi.com. disclaimers the information in this document is believed to be reliable. ho wever, peregrine assumes no liability for the use of this inform ation. use shall be entirely at the user?s own risk. no patent rights or licenses to any circuits described in this document are implied or granted to any third party. peregrine?s products are not designed or intended for use in devi ces or systems intended for surgical implant, or in other appl ications intended to support or sustain life, or in any applicati on in which the failure of the peregrine product could create a situation in which personal injury or death might occur. peregrine assumes no liability for damages, incl uding consequential or incidental damages, aris ing out of the use of its products in such applications. patent statement peregrine products are protected under one or more of the following u.s. patents: patents.psemi.com copyright and trademark ?2015?2016, peregrine semiconductor corporation. all rights reserv ed. the peregrine name, logo, utsi and ultracmos are register ed trade- marks and harp, multiswitch and dune are tr ademarks of peregrine semiconductor corp. ordering information table 6 lists the available ordering codes for the pe4152 as well as available shipping methods. table 6 ? order codes for pe4152 order codes description packaging shipping method pe4152a-z pe4152 mixer with integrated lo green 20-lead 4 4 mm qfn 3000 units / t&r EK4152-02 pe4152 evaluation kit evaluation kit 1 / box

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