elektronische bauelemente sms3401a -4.2a , -30v , r ds(on) 60 m ? p-channel enhancement mode power mosfet 27-jun-2014 rev.a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free description the sms3401a provide the designer with the best combination of fast switching, ruggedized device de sign, low on-resistance and cost-effectiveness. the sot-23 pa ckage is universally preferred for all commercial-industr ial surface mount applications and suited for low voltage appli cations such as dc/dc converters. features lower gate charge simple drive requirement fast switching characteristic marking package information package mpq leader size sot-23 3k 7 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds -30 v gate-source voltage v gs 12 v continuous drain current i d -4.2 a maximum power dissipation p d 400 mw thermal resistance junction-ambient (t<5s) r ja 313 c / w operating junction & storage temperature t j , t stg 150, -55~150 c sot-23 r1 a top view a l c b d g h j f k e 1 2 3 1 2 3 millimeter millimeter ref. min. max. ref. min. max. a 2.70 3.10 g 0.09 0.18 b 2.10 2.65 h 0.35 0.65 c 1.20 1.40 j 0.08 0.20 d 0.89 1.17 k 0.6 ref. e 1.78 2.04 l 0.95 bsc. f 0.30 0.50 1 2 3
elektronische bauelemente sms3401a -4.2a , -30v , r ds(on) 60 m ? p-channel enhancement mode power mosfet 27-jun-2014 rev.a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage v (br)dss -30 - - v v gs =0, i d = -250 a gate-threshold voltage v gs(th) -0.7 - -1.3 v v ds =v gs , i d = -250 a gate-source leakage current i gss - - 100 na v gs = 12v, v ds =0 drain-source leakage current i dss - - -1 a v ds = -24v, v gs =0 forward tranconductance 1 g fs 7 - - s v ds = -5v, i d = -5a - - 60 v gs = -10v, i d =-4.2a - - 70 v gs = -4.5v, i d = -4a static drain-source on-resistance 1 r ds(on) - - 85 m v gs = -2.5v, i d = -1a dynamic parameters 2 input capacitance c iss - 1050 - output capacitance c oss - 127 - reverse transfer capacitance c rss - 85 - pf v gs =0 v ds = -15v f =1.0mhz turn-on delay time t d(on) - 6.5 - rise time t r - 3.5 - turn-off delay time t d(off) - 40 - fall time t f - 13 - ns v gs = -10v v ds = -15v r gen =6 r l =3.6 source-drain diode forward voltage 1 v sd - - -1 v v gs =0, i s = -1a note: 1. pulse test : pulse width Q 300s, duty cycle Q 2%. 2. these parameters have no way to verify.
elektronische bauelemente sms3401a -4.2a , -30v , r ds(on) 60 m ? p-channel enhancement mode power mosfet 27-jun-2014 rev.a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
|
