sqp60n06-15 www.vishay.com vishay siliconix s13-0840-rev. a, 22-apr-13 1 document number: 63554 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 automotive n-channel 60 v (d-s) 175 c mosfet features ?trenchfet ? power mosfet ? package with low thermal resistance ? aec-q101 qualified d ?100 % r g and uis tested ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 notes a. package limited. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. c. when mounted on 1" squa re pcb (fr-4 material). d. parametric verification ongoing. product summary v ds (v) 60 r ds(on) ( ? ) at v gs = 10 v 0.015 i d (a) 56 configuration single d g s n-channel mosfet top view to-220ab gd s ordering information package to-220 lead (pb)-free and halo gen-free sqp60n06-15-ge3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 continuous drain current t c = 25 c i d 56 a t c = 125 c 32 continuous source curr ent (diode conduction) a i s 60 pulsed drain current b i dm 190 single pulse avalanche current l = 0.1 mh i as 29 single pulse avalanche energy e as 42 mj maximum power dissipation b t c = 25 c p d 107 w t c = 125 c 35 operating junction and storage temperature range t j , t stg - 55 to + 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 40 c/w junction-to-case (drain) r thjc 1.4
sqp60n06-15 www.vishay.com vishay siliconix s13-0840-rev. a, 22-apr-13 2 document number: 63554 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design , not subject to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0, i d = 250 a 60 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 - 3.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = 60 v - - 1 a v gs = 0 v v ds = 60 v, t j = 125 c - - 50 v gs = 0 v v ds = 60 v, t j = 175 c - - 250 on-state drain current a i d(on) v gs = 10 v v ds ??? 5 v 75 - - a drain-source on-state resistance a r ds(on) v gs = 10 v i d = 30 a - 0.012 0.015 ? v gs = 10 v i d = 30 a, t j = 125 c - - 0.027 v gs = 10 v i d = 30 a, t j = 175 c - - 0.033 forward transconductance b g fs v ds = 15 v, i d = 30 a - 61 - s dynamic b input capacitance c iss v gs = 0 v v ds = 25 v, f = 1 mhz - 1983 2480 pf output capacitance c oss - 314 395 reverse transfer capacitance c rss - 125 160 total gate charge c q g v gs = 10 v v ds = 30 v, i d = 60 a -3350 nc gate-source charge c q gs - 10.7 - gate-drain charge c q gd -8.8- gate resistance r g f = 1 mhz 0.8 1.6 2.4 ? turn-on delay time c t d(on) v dd = 30 v, r l = 0.5 ? i d ? 60 a, v gen = 10 v, r g = 1 ? -1117 ns rise time c t r -1218 turn-off delay time c t d(off) -2132 fall time c t f -711 source-drain diode ratings and characteristics b pulsed current a i sm - - 190 a forward voltage v sd i f = 30 a, v gs = 0 - 0.9 1.5 v
sqp60n06-15 www.vishay.com vishay siliconix s13-0840-rev. a, 22-apr-13 3 document number: 63554 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 0 20 40 60 80 100 0 3 6 9 12 15 v gs = 10 v thru 7 v v gs =5v v gs =4v v gs =6v v d s - drain-to- s ource voltage (v) i d - drain current (a) 0 20 40 60 80 100 0 12 24 36 48 60 g f s - tran s conductance ( s ) i d - drain current (a) t c = 125 c t c = - 55 c t c = 25 c c r ss ss c o ss v d s - drain-to- s ource voltage (v) c - capacitance (pf) 0 20 40 60 80 100 0 2 4 6 8 10 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = - 55 c t c = 125 c t c = 25 c 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0 20 40 60 80 100 r d s (on) - on-re s i s tance () i d - drain current (a) v gs = 10 v 0 2 4 6 8 10 0 7 14 21 28 35 v gs - g ate-to- s ource voltage (v) q g - total g ate charge (nc) v d s = 30 v i d = 60 a
sqp60n06-15 www.vishay.com vishay siliconix s13-0840-rev. a, 22-apr-13 4 document number: 63554 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage source drain diod e forward voltage threshold voltage drain source breakdown vs. junction temperature 0.5 0.9 1.3 1.7 2.1 2.5 - 50 - 25 0 25 50 75 100 125 150 175 i d =30a v gs =10v t j - junction temperature (c) (normalized) r d s (on) - on-re s i s tance 0 0.02 0.04 0.06 0.08 0.10 0246810 t j = 25 c t j = 150 c r d s (on) - on-re s i s tance ( ) v gs - g ate-to- s ource voltage (v) v sd - source-to-drain voltage (v) - source current (a) i s 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c - 1.7 - 1.2 - 0.7 - 0.2 0.3 0.8 - 50 - 25 0 25 50 75 100 125 150 175 i d =5ma i d = 250 a v gs (th) variance (v) t j - temperature (c) - 50 - 25 0 25 50 75 100 125 150 175 v ds - drain-to-source voltage (v) t j - junction temperature (c) i d =10ma 60 64 68 72 76 80
sqp60n06-15 www.vishay.com vishay siliconix s13-0840-rev. a, 22-apr-13 5 document number: 63554 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 i d - drain current (a) v d s - drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecified limited by r d s (on) * 1 m s i dm limited t c = 25 c s ingle pul s e bvd ss limited 10 m s 100 s 100 m s , 1 s ,10 s , dc 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 1 0.01 0.001 0.1 0.0001 sq uare wave pul s e duration ( s ) normalized effective tran s ient thermal impedance
sqp60n06-15 www.vishay.com vishay siliconix s13-0840-rev. a, 22-apr-13 6 document number: 63554 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction-to-ambient (25 c) - normalized transient thermal im pedance junction-to-case (25 c) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circ uit board - fr4, size 1" x 1" x 0. 062", double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldwide manufactu ring capability. products may be manufact ured at one of seve ral qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63554 . square wave pulse duration (s) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 110 normalized effective transient thermal impedance 0.2 0.1 duty cycle = 0.5 30 0.05 0.02 single pulse
ordering information www.vishay.com vishay siliconix revision: 25-aug-15 1 document number: 67167 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-220 ordering codes for the sq rugged series power mosfets in the to-220 package: note a. old ordering code is obsolete and no longer valid for new orders datasheet part number o ld ordering code a new ordering code sqp100p06-9m3l - sqp100p06-9m3l_ge3 sqp120n06-06 - sqp120n06-06_ge3 sqp120n06-3m5l sqp120n06-3m5l-ge3 sqp120n06-3m5l_ge3 sqp120n10-09 sqp120n10-09-ge3 sqp120n10-09_ge3 sqp120n10-3m8 sqp120n10-3m8-ge3 sqp120n10-3m8_ge3 sqp25n15-52 - sqp25n15-52_ge3 sqp50n06-09l sqp50n06-09l-ge3 sqp50n06-09l_ge3 sqp50p03-07 sqp50p03-07-ge3 sqp50p03-07_ge3 sqp60n06-15 sqp60n06-15-ge3 sqp60n06-15_ge3 sqp90p06-07l sqp90p06-07l-ge3 sqp90p06-07l_ge3
package information www.vishay.com vishay siliconix revison: 16-jun-14 1 document number: 71195 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-220ab note * m = 1.32 mm to 1.62 mm (dimension including protrusion) heatsink hole for hvm m * 3 2 1 l l(1) d h(1) q ? p a f j(1) b(1) e(1) e e b c d2 millimeters inches dim. min. max. min. max. a 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 d 14.85 15.49 0.585 0.610 d2 12.19 12.70 0.480 0.500 e 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 f 1.14 1.40 0.045 0.055 h(1) 6.09 6.48 0.240 0.255 j(1) 2.41 2.92 0.095 0.115 l 13.35 14.02 0.526 0.552 l(1) 3.32 3.82 0.131 0.150 ? p 3.54 3.94 0.139 0.155 q 2.60 3.00 0.102 0.118 ecn: t14-0413-rev. p, 16-jun-14 dwg: 5471
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