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www.irf.com 3 ! :5 =' 2# "# $# 0 10 20 30 40 0.1 1 10 100 f, fre q uenc y ( khz ) load current (a) a 60% of rated voltage duty cycle: 50% t = 125c t = 90c gate drive as specified turn-on losses include effects of reverse recovery sink j power dissipation = 35w 1 10 100 1000 5 6 7 8 9 10 11 12 c i , collector-to-emitter current (a) ge t = 25c t = 150c j j v , gate-to-emitter voltage (v) a v = 50v 5s pulse width cc 1 10 100 1000 110 ce v , collector-to-emitter voltage (v) t = 150c t = 25c j j v = 15v 20s pulse width ge a ' 522 .
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('* ) ' %&'' ' 0 10 20 30 40 50 25 50 75 100 125 15 0 maximum dc collector current (a) t , case temperature (c) c v = 15v ge 1.0 1.5 2.0 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 ce v , collector-to-emitter voltage (v) v = 15v 80s pulse width ge a t , junction temperature (c) j i = 54a i = 27a i = 14a c c c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) thermal response (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c

www.irf.com 5 ('* +#* +('* ,-#*+ . ,-#* ) ' ,-#*/')0 ,-#*/')0 0.1 1 10 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 r = 10 ? v = 15v v = 480v a g ge cc t , junction temperature (c) j i = 14a i = 54a i = 27a c c c 0 4 8 12 16 20 0 20406080100120 ge v , gate-to-emitter voltage (v) g q , total gate charge (nc) a v = 400v i = 27a ce c 0 1000 2000 3000 4000 1 10 100 ce v , collector-to-emitter voltage (v) a c ies c res c oes !"# $ $ "%
$ / 0 3.0 3.1 3.2 3.3 0 102030405060 a r , gate resistance ( ? ) g v = 480v v = 15v t = 25c i = 27a cc ge j c

6 www.irf.com ,-#* (' "$$," %&'' -*1 - ,-#*/')0 0 2 4 6 8 10 12 0 102030405060 c i , collector-to-emitter current (a) a r = 10 ? t = 150c v = 480v v = 15v g j cc ge 1 10 100 0.8 1.2 1.6 2.0 2.4 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 25c j j j 1 10 100 1000 1 10 100 100 0 c ce ge v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) safe operating area v = 20v t = 125c ge j

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2 2 0 200 400 600 800 100 1000 f di /dt - (a/s) rr q - (nc) i = 30a i = 15a i = 5.0a f f f v = 200v t = 125c t = 25c r j j 100 1000 100 1000 f di /dt - (a/s) di(rec)m/dt - (a/s) i = 5.0a i = 15a i = 30a f f f v = 200v t = 125c t = 25c r j j 1 10 100 100 1000 f di /dt - (a/s) i - (a) irrm i = 5.0a i = 15a i = 30a f f f v = 200v t = 125c t = 25c r j j 20 40 60 80 100 100 1000 f di /dt - (a/s) t - (ns) rr i = 30a i = 15a i = 5.0a f f f v = 200v t = 125c t = 25c r j j

8 www.irf.com t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+5s vce ic dt 90% vge +vge eoff = ) >* 5

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www.irf.com 9 vg gate signal device under tes t current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v
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# lead assignments notes: - d - 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 3x 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087) 3.40 (.133) 3.00 (.118) 3x 0.25 (.010) m c a s 4.30 (.170) 3.70 (.145) - c - 2x 5.50 (.217) 4.50 (.177) 5.50 (.217) 0.25 (.010) 1.40 (.056) 1.00 (.039) 3.65 (.143) 3.55 (.140) d m m b - a - 15.90 (.626) 15.30 (.602) - b - 12 3 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2x 2x 5.45 (.215) 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-247-ac. 1 - gate 2 - drain 3 - source 4 - drain lead assignments hexfet 1 - gate 2 - drain 3 - source 4 - drain igbt 1 - gate 2 - collector 3 - emitter 4 - collector

note: "p" in assembly line position indicates "lead-free" data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 06/2010

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