2008. 9. 17 1/4 semiconductor technical data KMD7D5P40QA p-ch trench mosfet revision no : 1 general description this trench mosfet has better characteristics, such as low on resistance, low gate charge and excellent avalanche characteristiscs. it is mainly suitable for battery protection circuit. features ? v dss =-40v, i d =-7.5a. ? drain-source on resistance. r ds(on) =30m ? (max.) @ v gs =-10v r ds(on) =37m ? (max.) @ v gs =-4.5v ? super high dense cell design mosfet maximum ratings (ta=25 ? unless otherwise noted) b2 g h b1 1 4 5 8 a p d l t flp-8 0.20+0.1/-0.05 t p 1.27 millimeters dim a 4.85 0.2 + _ b1 3.94 0.2 + _ b2 6.02 0.3 + _ d 0.4 0.1 + _ g 0.15+0.1/-0.05 h 1.63 0.2 + _ l 0.65 0.2 + _ note : *surface mounted on 1? ?? 1? fr4 board, t ?a 10sec 1 2 3 4 8 7 6 5 s s s g d d d d 1 2 3 4 8 7 6 5 kmd7d5p 40qa pin connection (top view) characteristic symbol pating unit drain source voltage v dss -40 v gate source voltage v gss ?? 20 v drain current dc@ta=25 ? i d * -7.5 a pulsed i dp -30 a drain source diode forward current i s -30 a drain power dissipation dc@ta=25 ? p d * 2.0 w maximum junction temperature t j 150 ? storage temperature range t stg -55~150 ? thermal resistance, junction to ambient r thja * 62.5 ? /w
2008. 9. 17 2/4 KMD7D5P40QA revision no : 1 electrical characteristics (ta=25 ? ) unless otherwise noted characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss v gs =0v, i ds =-250 a -40 - - v drain cut-off current i dss v ds =-40v, v gs =0v - - -10 a gate leakage current i gss v gs = ?? 20v, v ds =0v - - ?? 10 a gate threshold voltage v th v ds =v gs, i d =-250 a -1.0 - -3.0 v drain-source on resistance r ds(on)* v gs =-10v, i d =-3.8a - 24 30 m ? v gs =-4.5v, i d =-3.8a - 29 37 forward transconductance g fs* v ds =-10v, i d =-3.8a - 1.2 - s dynamic gate resistance r g v gs =0v, v ds =0v, f=1mhz - 6 - k ? total gate charge q g* v ds =-32v, v gs =-10v, i d =-7.5a - 27 - nc gate-source charge q gs* - 3.2 - gate-drain charge q gd* - 8.1 - turn-on delay time t d(on)* v dd =-20v, v gs =-10v i d =-7.5a, r g =4.7 ? - 3.4 - s turn-on rise time t r* - 3.9 - turn-off delay time t d(off)* - 1.4 - turn-off fall time t f* - 7.7 - source-drain diode ratings source-drain forward voltage v sdf* v gs =0v, i dr =-7.5a, - - -1.2 v note) *pulse test : pulse width ?a 300 ? , duty cycle ?a 2%
2008. 9. 17 3/4 KMD7D5P40QA revision no : 1 -1 0-2-3-4-5 -5 -10 -15 -20 -30 0 -3.5v v gs =-3.0v -4.0v drain - current i d (a) 0 0 10 30 -10 20 40 -20 -30 -40 drain- source on resistance r ds(on) (m ? ) 0 30 10 20 40 -25 150 50 75 100 125 25 -50 0 -75 common source i d =-3.8a pulse test c common source ta=25 pulse test junction temperature tj ( ) c fig1. i d - v ds drain current i d (a) drain - source voltage v ds (v) drain- source on resistance r ds(on) (m ? ) fig2. r ds(on) -i d fig4. r ds(on) - t j v gs =-4.5v v gs =-10v v gs =-4.5v v gs =-10v gate source volatage v gs (v) 0 0-1 -15 -10 -5 -20 -25 -30 -2 -3 -4 -5 common source v ds =v gs pulse test -75 -50 -25 0 50 100 75 125 150 25 0 -1 -4 -2 -5 -3 junction temperature tj ( ) c common source v gs =v ds i d =-250 a pulse test gate threshold voltage v th (v) drain current i d (a) fig3. i d - v gs fig5. v th - t j 25 c -55 c -5.0v -10v -4.5v t a =125 c -25 fig6. i s - v sdf -0.2 -0.1 -1 -0.01 -100 -10 -0.4 -0.8 -1.2 -1 -0.6 reverse drain current i s (a) source - drain forward voltage v sdf (v) tj=25 c tj = 125 c
2008. 9. 17 4/4 KMD7D5P40QA revision no : 1 square wave pulse duration tw (sec) 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 fig9. transient thermal response curve normalized effective transient thermal resistanc 0.1 0.01 0.02 0.05 d = 0.5 0.2 single gate - charge q g (nc) 0 -10 -6 -2 -4 -8 24 18 612 030 fig7. q g - v gs gate - source voltage v gs (v) v ds = -32 v i d = -7.5 a t 1 t 2 p dm 1. duty cycle d = t 1 /t 2 2. per unit base = r thja =62.5 c/w drain current i d (a) drain - source voltage v ds (v) fig8. safe operation area -10 0 -10 -2 -10 -2 -10 -1 -10 0 -10 1 -10 2 -10 -1 -10 2 -10 1 v gs = -10v single pulse t a = 25 c dc 1s 10s 10ms 1ms 100 s r d s( on) limit 100ms
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