SI6410DQ vishay siliconix document number: 70661 s-56945erev. c, 23-nov-98 www.vishay.com faxback 408-970-5600 2-1 n-channel 30-v (d-s) mosfet
v ds (v) r ds(on) ( ) i d (a) 30 0.014 @ v gs = 10 v 7.8 30 0.021 @ v gs = 4.5 v 6.3 SI6410DQ d s s g 1 2 3 4 8 7 6 5 d s s d tssop-8 top view d g s* n-channel mosfet * source pins 2, 3, 6 and 7 must be tied common.
parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current ( t j = 150 c ) a t a = 25 c i d 7.8 a continuous drain current (t j = 150 c) a t a = 70 c i d 6.2 a pulsed drain current i dm 30 a continuous source current (diode conduction) a i s 1.5 maximum power dissipation a t a = 25 c p d 1.5 w maximum power dissipation a t a = 70 c p d 1.0 w operating junction and storage temperature range t j , t stg 55 to 150 c
parameter symbol limit unit maximum junction-to-ambient a r thja 83 c/w notes a. surface mounted on fr4 board, t 10 sec. for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm
SI6410DQ vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70661 s-56945erev. c, 23-nov-98
parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a zero gate v oltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 55 c 25 a on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 20 a drain source on state resistance a r ds( ) v gs = 10 v, i d = 7.8 a 0.011 0.014 drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 5 a 0.015 0.021 forward transconductance a g fs v ds = 15 v, i d = 7.8 a 27 s diode forward voltage a v sd i s = 1.5 a, v gs = 0 v 0.7 1.1 v dynamic b gate charge q g v ds = 15 v, v gs = 5 v, i d = 7.8 a 22 33 c total gate charge q gt v15vv10vi78a 43 60 nc gate-source charge q gs v ds = 15 v, v gs = 10 v, i d = 7.8 a 9.0 nc gate-drain charge q gd 7.0 turn-on delay time t d(on) v15vr15 15 30 rise time t r v dd = 15 v, r l = 15 i 1 a v 10 v r 6 10 20 turn-off delay time t d(off) dd , l i d 1 a, v gen = 10 v, r g = 6 70 120 ns fall time t f 20 50 source-drain reverse recovery time t rr i f = 1.5 a, di/dt = 100 a/ s 50 80 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.
SI6410DQ vishay siliconix document number: 70661 s-56945erev. c, 23-nov-98 www.vishay.com faxback 408-970-5600 2-3
0 6 12 18 24 30 0246810 0 2 4 6 8 10 0 9 18 27 36 45 0 0.4 0.8 1.2 1.6 2.0 50 25 0 25 50 75 100 125 150 0 0.006 0.012 0.018 0.024 0.030 0 5 10 15 20 25 30 0 6 12 18 24 30 01234 output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs = 10 v thru 4 v v gs gate-to-source voltage (v) drain current (a) i d t c = 125 c 25 c 55 c gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs c rss c oss c iss v ds = 15 v i d = 7.8 a on-resistance ( r ds(on) ) i d drain current (a) capacitance on-resistance vs. junction temperature v gs = 10 v i d = 7.8 a t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) v gs = 10 v v gs = 4.5 v 3 v 0 700 1400 2100 2800 3500 4200 0 5 10 15 20 25 30
SI6410DQ vishay siliconix www.vishay.com faxback 408-970-5600 2-4 document number: 70661 s-56945erev. c, 23-nov-98
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 10 20 30 40 50 60 0.01 0.10 1.00 10.00 source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 2 1 0.1 0.01 10 4 10 3 10 2 10 1 110 normalized effective transient thermal impedance 30 on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature (_c) time (sec) power (w) 0 0.02 0.04 0.06 0.08 0.10 0246810 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 50 25 0 25 50 75 100 125 150 i d = 7.8 a i d = 250 a variance (v) v gs(th) 20 10 1 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r thja = 83 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 30 t j = 150 c t j = 25 c
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