1 silicon bidirectional thyristors designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. ? blocking voltage 400 volts ? all diffused and glass passivated junctions for greater parameter uniformity and stability ? small, rugged, thermowatt construction for low thermal resistance, high heat dissipation and durability ? high surge current capability 60 amps peak at t c = 80 c ? device marking: logo, device type, e.g., T2500D, date code maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive offstate voltage (1) (sine wave 50 to 60 hz, t j = 40 to +100 c, gate open) v drm, v rrm 400 volts onstate rms current (t c = +80 c) (full cycle sine wave 50 to 60 hz) i t(rms) 6.0 a peak nonrepetitive surge current (one full cycle, 60 hz, t c = +80 c) i tsm 60 a circuit fusing considerations (t = 8.3 ms) i 2 t 15 a 2 s peak gate power (t c = +80 c, pulse width = 10 m sec) p gm 16 watts average gate power (t c = +80 c, t = 8.3 ms) p g(av) 0.2 watt peak gate current (pulse width = 10 m sec) i gm 4.0 a operating junction temperature range t j 40 to +125 c storage temperature range t stg 40 to +150 c triacs 6 amperes rms 400 volts device package shipping ordering information T2500D to220ab 500/box to220ab case 221a style 4 1 2 3 4 pin assignment 1 2 3 gate main terminal 1 main terminal 2 4 main terminal 2 www.kersemi.com mt1 g mt2
T2500D www.kersemi.com 2 thermal characteristics characteristic symbol value unit thermal resistance e junction to case r q jc 2.7 c/w maximum lead temperature for soldering purposes 1/8 from case for 10 seconds t l 260 c electrical characteristics (t c = 25 c unless otherwise noted; electricals apply in both directions) characteristic symbol min typ max unit off characteristics peak repetitive blocking current t j = 25 c (rated v drm , v rrm ; gate open) t j = 100 c i drm , i rrm e e 10 2.0 m a ma on characteristics peak on-state voltage* (i tm = 30 a peak) v tm e e 2.0 volts gate tri gger current (continuous dc) (v d = 12 vdc, r l = 100 ohms) mt2(+), g(+) mt2(+), g() mt2(), g() mt2(), g(+) i gt e e e e 10 20 15 30 25 60 25 60 ma gate tri gger v oltage (continuous dc) (all four quadrants) (v d = 12 vdc, r l = 100 ohms) v gt e 1.25 2.5 volts gate n ontrigger v oltage (v d = 12 v, r l = 100 ohms, t c = 100 c) v gd 0.2 e e volts holding current (main terminal voltage = 12 vdc, gate open, initiating current = 200 ma) i h e 15 30 ma gate controlled turn-on time (rated v drm , i t = 10 a , i gt = 160 ma, rise time = 0.1 m s) t gt e 1.6 e m s dynamic characteristics critical rate-of-rise of commutation voltage (rated v drm , i t(rms) = 6 a, commutating di/dt = 3.2 a/ms, gate unenergized, t c = 80 c) dv/dt(c) e 10 e v/ m s critical rate-of-rise of off-state voltage (rated v drm , exponential voltage rise, gate open, t c = 100 c) dv/dt e 75 e v/ m s * pulse test: pulse width 2.0 ms, duty cycle 2%.
T2500D www.kersemi.com 3 + current + voltage v tm i h symbol parameter v drm peak repetitive forward off state voltage i drm peak forward blocking current v rrm peak repetitive reverse off state voltage i rrm peak reverse blocking current voltage current characteristic of triacs (bidirectional device) i drm at v drm on state off state i rrm at v rrm quadrant 1 mainterminal 2 + quadrant 3 mainterminal 2 v tm i h v tm maximum on state voltage i h holding current mt1 (+) i gt gate (+) mt2 ref mt1 () i gt gate (+) mt2 ref mt1 (+) i gt gate () mt2 ref mt1 () i gt gate () mt2 ref mt2 negative (negative half cycle) mt2 positive (positive half cycle) + quadrant iii quadrant iv quadrant ii quadrant i quadrant definitions for a triac i gt + i gt all polarities are referenced to mt1. with inphase signals (using standard ac lines) quadrants i and iii are used.
T2500D 4 package dimensions style 4: pin 1. main terminal 1 2. main terminal 2 3. gate 4. main terminal 2 to220ab case 221a07 issue z notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.022 0.36 0.55 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 1.15 z 0.080 2.04 a k l v g d n z h q f b 123 4 t seating plane s r j u t c www.kersemi.com
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