1 elm3f401ja - s 4 - g e neral description f eatures maximum a bsolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction - to - case r j c 6 c /w maximum junction - to - a mbient r ja 62 c /w 5 parameter symbol limit unit note drain-source v oltag e vds -30 v gate - s ource v oltag e vgs 20 v conti nuous drain current t a = 25 c id -8.0 a 4 t a = 7 0 c -6.3 pulsed d rain current idm - 8 0 a 3 avalanche current ias -29 a avalanche energy l=0.1mh eas 4 2 mj power dissipation t c = 25 c pd 2. 0 w t c = 7 0 c 1. 2 j unction and storage temperature range tj , tstg - 55 to 150 c elm3f401ja - s uses advanced trench technology to provide excellent r ds(on) , low gate charge and low gate resistance. pin configuration c ircuit single p-channel mosfet s g d ? vds =- 3 0v ? id = - 8 a ? rds (on) < 20 m (vgs =- 10 v) ? rds (on) < 35 m (vgs =- 4.5 v) pdfn - 3x3 (top vi ew) pin no. pin name 1 source 2 source 3 source 4 gate 5 drain 6 drain 7 drain 8 drain ? 1 2 3 4 8 7 6 5 t a = 25 c . u nless otherwise noted.
2 elm3f401ja - s 4 - electrical characteristics parameter symbol condition min. typ. max. unit note static parameters drain - s ource breakdown voltage bvdss id =- 25 0 a , vgs = 0v - 3 0 v zero g ate voltage drain current idss vds =- 24 v, vgs = 0v -1 a vds =- 2 0 v, vgs = 0v t a = 12 5 c -10 gate - b ody leakage current ig s s vds = 0v , vgs = 2 0 v - 100 n a gate t hreshold voltage vg s( th) vds = vgs , id =- 25 0 a -1.0 -1.5 -3.0 v on s tate drain current i d ( on ) vds=-5v, vgs=-10v -80 a 1 static drain - s ource on - r esistance r d s (o n ) vgs =- 10 v, i d = - 9 a 1 5 20 m 1 vgs =- 4.5 v, id =- 7 a 23 35 forward transconductance gfs vds =- 5 v, id =- 9 a 23 s 1 diode forward voltage vsd i f = -9a , vgs = 0v -1 v 1 max. body - d iode continuous c urrent is -25 a 4 dynamic parameters input capacitance c iss vgs = 0v, vds =- 15 v f = 1mh z 1300 pf output capacitance c oss 212 pf reverse transfer capacitance c r ss 200 pf gate resistance rg vgs = 0 v, vds =0 v, f=1mhz 2.8 switching parameters total gate charge (vgs=-10v) q g vds =- 15 v, id = - 9 a 29.4 nc 2 total gate charge (vgs=-4.5v) q g 15.6 nc 2 gate - s ource charge q gs 3.8 nc 2 gate - d rain charge q gd 7.8 nc 2 turn - o n delay time t d (on) vgs =- 10 v, vds =- 15 v id = - 9 a, rgen = 6 20 ns 2 turn - o n rise t ime t r 12 ns 2 turn - o ff delay time t d ( of f ) 55 ns 2 turn - o ff fall t ime t f 36 ns 2 body diode reverse recovery time trr if=-9a, dlf/dt=100a/ s 14.3 ns body diode reverse recovery charge qrr 4.2 nc single p-channel mosfet note : 1. pulse test : pulsed width 300 sec and duty cycle 2%. 2. independent of operating temperature . 3. pulsed width limited by maximum junction temperature. 4 . package limitation current is 30a . 5. the value of rja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ- ment with ta =25c. the value in any given application depends on the users specific board design. t a = 25 c . u nless otherwise noted.
3 elm3f401ja - s 4 - typical electrical and thermal characteristics single p-channel mosfet p- channel logic level enhancement mode niko - sem rev 0.9 output characteristics -i d , drain-to-source current(a) -v ds , drain-to- source voltage(v) gate charge characteristics -v gs , gate-to-source voltage(v) qg , total gate charge(nc) on - resistance vs gate - to - r ds(on) on-resistance(ohm) - v g s , gate - to - source voltage(v) 0 6 12 18 24 30 0 1 2 3 vgs=-10v ??????? ??????? ??????? ??????? ??????? ????????? ??????? vgs= vgs= 0 2 4 6 8 10 0 6 12 18 vds=-15v id =-9a 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0 6 12 18 vgs=-10v vgs=-4.5v channel logic level enhancement mode field effect transistor halogen 3 output characteristics transfer characteristics -i d , drain-to-source current(a) -v gs , gate-to - source voltage(v) capacitance characteristic c , capacitance(pf) -v ds , drain- to gate charge characteristics qg , total gate charge(nc) on - resistance vs drain current r ds(on) on-resistance(ohm) - i d , drain - to - - source source voltage(v) 25 ? ?? ? 125 ? ?? ? 0 6 12 18 24 30 0 1 2 0 0.02 0.04 0.06 0.08 0.1 2 4 4 5 vgs= -3.5v vgs= -2.5v 24 30 24 30 0 200 400 600 800 1000 1200 1400 1600 0 5 10 channel logic level enhancement mode p 2003eeaa pdfn 3x3p halogen -free & lead-free oct-05-2011 transfer characteristics - source voltage(v) capacitance characteristic to -source voltage(v) resistance vs drain current - source current(a) -20 ? ?? ? 3 4 5 6 8 10 id=-9a ciss coss crss 15 20 25 30
4 elm3f401ja - s 4 - single p-channel mosfet p-channel logic level enhancement mode field effect transistor p 2003eeaa pdfn 3x3p halogen-free & lead-free niko - sem 4 oct-05-2011 rev 0.9 single pulse time(s) -v ds , drain-to-source voltage(v) transient thermal response curve dc 100ms 10ms 1ms 0.01 0.1 1 10 100 0.1 1 10 100 note : 1.vgs= -10v 2.ta=25?c 3.r ? ja = 62?c/w 4.single pulse operation in this area is limited by rds(on) normalized drain to source on-resistance t j , junction temperature(?c) source-drain diode forward voltage -i s , source current(a) safe operating area single pulse maximum power diss ipation -i d , drain current(a) power(w) r(t) , normalized effective transient thermal resistance t 1 , square wave pulse duration[sec] -v sd , source-to-drain voltage(v) on - resistance vs temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 vgs=-10v id=-9a 25 ? ?? ? 125 ? ?? ? 0 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 single pulse r ? ja = 62?c/w ta=25?c single pulse duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 notes 1.duty cycle, d= t1 / t2 2.rthja = 62 ? ?? ? /w 3.tj-ta = p*rthja(t) 4.rthja(t) = r(t)*rthja
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