semiconductor group 1 may-05-1997 bup 212 igbt ? low forward voltage drop ? high switching speed ? low tail current ? latch-up free ? avalanche rated pin 1 pin 2 pin 3 g c e type v ce i c package ordering code bup 212 1200v 22a to-220 ab q67040-a . . . . . maximum ratings parameter symbol values unit collector-emitter voltage v ce 1200 v emitter-collector voltage v ec collector-gate voltage r ge = 20 k w v cgr 1200 gate-emitter voltage v ge 20 dc collector current t c = 25 c t c = 110 c i c 8 22 a pulsed collector current, t p = 1 ms t c = 25 c t c = 110 c i cpuls 16 44 avalanche energy, single pulse i c = 8 a, v cc = 50 v, r ge = 25 w l = 300 h, t j = 25 c e as 10 mj power dissipation t c = 25 c p tot 125 w chip or operating temperature t j -55 ... + 150 c storage temperature t stg -55 ... + 150
semiconductor group 2 may-05-1997 bup 212 maximum ratings parameter symbol values unit din humidity category, din 40 040 - e - iec climatic category, din iec 68-1 - 55 / 150 / 56 thermal resistance thermal resistance, chip case r thjc 1 k/w electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics gate threshold voltage v ge = v ce, i c = 0.3 ma, t j = 25 c v ge(th) 4.5 5.5 6.5 v collector-emitter saturation voltage v ge = 15 v, i c = 8 a, t j = 25 c v ge = 15 v, i c = 8 a, t j = 125 c v ge = 15 v, i c = 16 a, t j = 25 c v ge = 15 v, i c = 16 a, t j = 125 c v ce(sat) - - - - 4.3 3.4 3.1 2.5 - - 3.7 3 zero gate voltage collector current v ce = 1200 v, v ge = 0 v, t j = 25 c i ces - - 0.4 ma gate-emitter leakage current v ge = 25 v, v ce = 0 v i ges - - 120 na ac characteristics transconductance v ce = 20 v, i c = 8 a g fs 4 5 - s input capacitance v ce = 25 v, v ge = 0 v, f = 1 mhz c iss - 600 800 pf output capacitance v ce = 25 v, v ge = 0 v, f = 1 mhz c oss - 60 90 reverse transfer capacitance v ce = 25 v, v ge = 0 v, f = 1 mhz c rss - 38 55
semiconductor group 3 may-05-1997 bup 212 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. switching characteristics, inductive load at t j = 125 c turn-on delay time v cc = 600 v, v ge = 15 v, i c = 8 a r gon = 150 w t d(on) - 55 110 ns rise time v cc = 600 v, v ge = 15 v, i c = 8 a r gon = 150 w t r - 50 100 turn-off delay time v cc = 600 v, v ge = -15 v, i c = 8 a r goff = 150 w t d(off) - 380 570 fall time v cc = 600 v, v ge = -15 v, i c = 8 a r goff = 150 w t f - 80 120
semiconductor group 4 may-05-1997 bup 212 power dissipation p tot = | ( t c ) parameter: t j 150 c 0 20 40 60 80 100 120 c 160 t c 0 10 20 30 40 50 60 70 80 90 100 110 w 130 p tot collector current i c = | ( t c ) parameter: v ge 3 15 v , t j 150 c 0 20 40 60 80 100 120 c 160 t c 0 2 4 6 8 10 12 14 16 18 20 22 a 26 i c safe operating area i c = | ( v ce ) parameter: d = 0 , t c = 25c , t j 150 c -1 10 0 10 1 10 2 10 a i c 10 0 10 1 10 2 10 3 v v ce dc 10 ms 1 ms 100 s t p = 13.0 s transient thermal impedance igbt z th jc = | ( t p ) parameter: d = t p / t -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
semiconductor group 5 may-05-1997 bup 212 typ. output characteristics i c = f ( v ce ) parameter: t p = 80 s, t j = 25 c 0 1 2 3 v 5 v ce 0 2 4 6 8 10 12 14 16 a 20 i c 17v 15v 13v 11v 9v 7v typ. output characteristics i c = f ( v ce ) parameter: t p = 80 s, t j = 125 c 0 1 2 3 v 5 v ce 0 2 4 6 8 10 12 14 16 a 20 i c 17v 15v 13v 11v 9v 7v typ. transfer characteristics i c = f ( v ge ) parameter: t p = 80 s, v ce = 20 v 0 2 4 6 8 10 v 14 v ge 0 2 4 6 8 10 12 14 16 18 20 22 a 25 i c
semiconductor group 6 may-05-1997 bup 212 typ. switching time t = f ( r g ) , inductive load , t j = 125c par.: v ce =600v, v ge = 15v, i c =8 a 0 50 100 150 200 250 300 350 400 w 500 r g 1 10 2 10 3 10 ns t tdon tr tdoff tf typ. switching time t = f ( i c ) , inductive load , t j = 125c par.: v ce =600v, v ge = 15v, r g =153 w 0 4 8 12 16 20 24 a 30 i c 1 10 2 10 3 10 ns t tdon tr tdoff tf typ. switching losses e = f ( i c ) , inductive load , t j = 125c par.: v ce =600v, v ge = 15v, r g =153 w 0 4 8 12 16 20 24 a 30 i c 0 1 2 3 4 5 6 7 8 mws 10 e eon eoff typ. switching losses e = f ( r g ) , inductive load , t j = 125c par.: v ce =600v, v ge = 15v, i c =8 a 0 50 100 150 200 250 300 350 400 w 500 r g 0 1 2 3 4 5 6 7 8 mws 10 e eon eon
semiconductor group 7 may-05-1997 bup 212 typ. gate charge v ge = | ( q gate ) parameter: i c puls = 15 a 0 10 20 30 40 50 60 70 80 nc 100 q gate 0 2 4 6 8 10 12 14 16 v 20 v ge 800 v 600 v typ. capacitances c = f ( v ce ) 0 5 10 15 20 25 30 v 40 v ce 1 10 2 10 3 10 4 10 pf c c iss c oss c rss short circuit safe operating area i csc = f ( v ce ) , t j = 150c parameter: v ge = 15 v, t sc 10 s, l < 25 nh 0 200 400 600 800 1000 1200 v 1600 v ce 0 2 4 6 10 i csc / i c(90c) reverse biased safe operating area i cpuls = f (v ce ) , t j = 150c parameter: v ge = 15 v 0 200 400 600 800 1000 1200 v 1600 v ce 0.0 0.5 1.0 1.5 2.5 i cpuls / i c
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