<~>,ml-(lonauctoi , li ne, 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 silico n pn p powe r transistor s d45v h serie s descriptio n ? lo w saturatio n voltag e ? fas t switchin g spee d ? complemen t t o typ e d44v h serie s application s ? designe d fo r high-spee d switchin g applications , suc h a s switchin g regulator s an d hig h frequenc y inverters . the y ar e als o well-suite d fo r driver s fo r hig h powe r switchin g circuits . absolut e maximu m ratings(t a =25c ) symbo l vce v vce o veb o i c lo w p c t j t s tg paramete r collector-emitte r voltag e collector-emitte r voltag e d45v h 1 d45v h 4 d45v h 7 d45v h 1 0 d45v h 1 d45v h 4 d45v h 7 d45v h 1 0 emitter-bas e voltag e collecto r current-continuou s collecto r current-pea k collecto r powe r dissipatio n @t c =25' c junctio n temperatur e storag e temperatur e rang e valu e -5 0 -7 0 -8 0 -10 0 -3 0 -4 5 -6 0 -8 0 - 5 -1 5 -2 0 8 3 15 0 -55-150 uni t v v v a a w ' c ? c therma l characteristic s symbo l rt h j- c rt h j- a paramete r ma x therma l resistance , junctio n t o cas e 1. 5 therma l resistance , junctio n t o ambien t 62. 5 uni t ?c/ w ?c/ w 1 ^ . - f 1 2 3 2 ? ^ 3 pi n l.bas e 2 . collecto r 3 buiitte r to-220 c packag e rr l | 4 f a l t a i lj . i-t b * r ~ v ^ j p-6 ^ ^ moo* - ! k i 4 : j ? c * j.i * ? ? * 111 0 1 ? * ~ i 1 i i , di m a b c d f g h j k i a r s i i v /- l o - * soa 1 ' ^ ? m m mi n 15.7 0 9.9 0 4.2 0 0.7 0 4.9 8 2.7 0 0.4 4 13.2 0 1 1 0 2.7 0 2.5 0 1.2 9 6.4 5 8.6 6 ma x 15.9 0 10.1 0 4.4 0 0.9 0 j.o u 5.1 8 2.9 0 0.4 6 13.4 0 1.3 0 2.9 0 2.7 0 1.3 1 6.6 5 8.8 6 * s ~^f nr"*" * *|*- j r[* - qualit y semi-conductor s downloaded from: http:///
silico n pn p powe r transistor s d45v h serie s electrica l characteristic s t c =25' c unles s otherwis e specifie d symbo l vceo(sus ) vce(sat)- 1 vce(sat)- 2 vae(sat ) ice v ieb o hpe- 1 llfe- 2 co b f r paramete r d45v h 1 d45v h 4 collector-emitte r sustainin g voltag e d45v h 7 d45vh1 0 collector-emitte r saturatio n voltag e collector-emitte r saturatio n voltag e base-emitte r saturatio n voltag e collecto r cutoff curren t emitte r cutoff curren t d c curren t gai n d c curren t gai n outpu t capacitanc e current-gai n bandwidt h produc t condition s lc=-25ma;l b = 0 i c =-8a;i b =-0.8 a lc=-15a;l b =-3a;tc=100t : i c =-8a;i b =-0.8 a i c =-8a;i b =-0.8a;t c =100 c v ce =ratedv c e;v be(om =-4 v vce=ratedv c e;vse |
