cystech electronics corp. spec. no. : c434f3 issued date : 2010.09.09 revised date : page no. : 1/9 MTN2572F3 cystek product specification n-channel enhancement mode power mosfet bv dss 150v MTN2572F3 i d 48a r ds(on) 50m features ? low gate charge ? simple drive requirement ? repetitive avalanche rated ? fast switching characteristic ? rohs compliant package symbol outline MTN2572F3 to-263 g gate d drain g d s s source absolute maximum ratings (t c =25 c, unless otherwise noted) parameter symbol limits unit drain-source voltage v ds 150 gate-source voltage v gs 30 v continuous drain current @v gs =10v, t c =25 c i d 48 continuous drain current @v gs =10v, t c =100 c i d 30 pulsed drain current (note 1) i dm 140 avalanche current i as 18 a avalanche energy @ l=0.2mh, i d =18a, r g =25 e as 32.4 repetitive avalanche energy@ l=0.1mh (note 2) e ar 16.2 mj t c =25 125 power dissipation p d w t c =100 57 operating junction and storage temperature tj, tstg -55~+175 c note : 1. pulse width limited by maximum junction temperature 2. duty cycle 1%
cystech electronics corp. spec. no. : c434f3 issued date : 2010.09.09 revised date : page no. : 2/9 MTN2572F3 cystek product specification thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 1.2 c/w thermal resistance, junction-to-ambient, max r th,j-a 62.5 c/w characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 150 - - v v gs =0v, i d =250 a v gs(th) 1.5 2.5 4.0 v v ds = v gs , i d =250 a g fs - 40 - s v ds =5v, i d =20a i gss - - 100 na v gs = 30 - - 1 a v ds =120v, v gs =0v i dss - - 25 a v ds =100v, v gs =0v, tj=125 c *r ds(on) - 40 50 m v gs =10v, i d =20a *i d(on) 48 - - a v ds =10v, v gs =10v dynamic *qg - 30 - *qgs - 10 - *qgd - 8 - nc i d =20a, v ds =80v, v gs =10v *t d(on) - 20 - *tr - 18 - *t d(off) - 40 - *t f - 18 - ns v ds =75v, i d =1a, v gs =10v, r g =6 ciss - 1963 - coss - 195 - crss - 65 - pf v gs =0v, v ds =25v, f=1mhz rg - 2 - v gs =15mv, v ds =0v, f=1mhz source-drain diode *i s - - 48 *i sm - - 140 a *v sd - - 1.3 v i f =i s , v gs =0v *trr - 120 - ns *qrr - 380 - nc i f =25a, v gs =0, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping MTN2572F3 to-263 (rohs compliant package) 800 pcs / tape & reel
cystech electronics corp. spec. no. : c434f3 issued date : 2010.09.09 revised date : page no. : 3/9 MTN2572F3 cystek product specification characteristic curves
cystech electronics corp. spec. no. : c434f3 issued date : 2010.09.09 revised date : page no. : 4/9 MTN2572F3 cystek product specification characteristic curves(cont.)
cystech electronics corp. spec. no. : c434f3 issued date : 2010.09.09 revised date : page no. : 5/9 MTN2572F3 cystek product specification test circuit and waveforms
cystech electronics corp. spec. no. : c434f3 issued date : 2010.09.09 revised date : page no. : 6/9 MTN2572F3 cystek product specification test circuit and waveforms(cont.)
cystech electronics corp. spec. no. : c434f3 issued date : 2010.09.09 revised date : page no. : 7/9 MTN2572F3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c434f3 issued date : 2010.09.09 revised date : page no. : 8/9 MTN2572F3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c434f3 issued date : 2010.09.09 revised date : page no. : 9/9 MTN2572F3 cystek product specification to-263 dimension *:typical inches a b c d 123 k l j g h f e 2 1 2 3 i style : pin 1.gate 2.drain 3.source 3-lead plastic surface mounted package cystek package code : f3 marking : 2572 device name date code millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.3800 0.4050 9.65 10.29 i 0.0500 0.0700 1.27 1.78 b 0.3300 0.3700 8.38 9.40 j - *0.1000 - *2.54 c - 0.0550 - 1.40 k 0.0450 0.0550 1.14 1.40 d 0.5750 0.6250 14.61 15.88 l 0.0200 0.0390 0.51 0.99 e 0.1600 0.1900 4.06 4.83 1 - - 6 8 f 0.0450 0.0550 1.14 1.40 2 - - 6 8 g 0.0900 0.1100 2.29 2.79 3 - - 0 5 h 0.0180 0.0290 0.46 0.74 notes : 1.controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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