ra th urm 1s r 1 s glass passivated fast recovery rectifier reverse voltage: 50 to 1000 volts forward current:1.0ampere mechanical data maximum ratings and electrical characteristics note : 1.test conditions: i 0.5a,i =1.0a,i =0.25a. f= r rr (rating at 25 c ambient temperature unless otherwise specified.single phase ,half wave ,60h ,resistive or inductive load. for capacitive load,derate current by 20%.) z 2.measured at 1mh and applied reverse voltage of 4.0 volts d.c. z features maximum recurrent peak reverse voltage v rrm v olts v olts v olts v olts a pf a mp s a mps v rms v dc i (av) i fsm v f i r t rr c j maximum rms voltage maximum dc blocking voltage maximum average forward rectified current maximum instantaneous forward voltage at 1.0 a operating junction and storage temperature range maximum reverse recovery time(note1) typical junction capacitance(note2) maximum dc reverse current at rated dc blocking voltage peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) -55 to+150 150 15.0 500 250 5.0 c tt j stg 50 50 35 100 100 70 200 200 140 400 400 280 600 600 420 800 800 560 1000 1000 700 30.0 1.3 1.0 r semiconductor symbols units R1AS glass passivated junction for surface mount applications, easy to pick and place plastic package has underwriters laboratory flammability classification 94v-0 r1bs r1ds r1gs r1js r1ks r1ms case: sod 123f molded plastic over glass passivated chip terminals: solder plated polarity: color band denotes cathode end - t =25 c t =125 c a a 150 component in accordance to rohs 2011 65 eu // high temperature soldering guaranteed:260c/10 seconds at terminals, ns jinan jingheng electronics co., ltd. http www.jingheng cn :// . 2-1 jf sod 123f - 0.063(1.6 ) 0.051(1.3) 5 0.110(2.8 ) 0.094(2.4) 0.146(3.70) 0.128(3.25) 0.193(4.90) 0.172(4.35) 0.059(1.5) 0.035(0.9) 0.012(0 3) . 0.004(0.1) 0.047(1.2) 0.028(0.6) dimensions in inches and (millimeters)
ratings and characteristic curves R1AS thru r1ms 10 0 20 30 40 50 148 6 260 10 20 40 100 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 fig.1-typical forward current derating curve fig.2-maximum non-repetitive forward surge current fig.3-typical instantaneous forward characteristics fig.4-typical reverse characteristics average forwa rd curren t(a) peak forward surge current(amperes) reverse voltage. (v) set time base for 50/100 ns/cm number of cycles at 60hz ambient temperature ( c) 8.3ms single half sine-wave (jedec method) 0.1 0.2 0.4 1 4 21040 20 1cm t rr -0.25a 0 +0.5a -1.0a 100 10 60 40 100 20 200 fig.5-typical junction capacitance fig.6-test circuit diagram and reverse recovery time characteristic junction capacitance(pf) t =25 c j singie phase haif wave 60h resistive or inductive load z 6 4 2 1 0.1 020 1 10 100 40 60 80 100 110 percent of rated peak reverse voltage,% instantaneous reverse leakage current(micro ampers) pulse generator (note2) noninductive oscilloscope (note1) d.u.t. noninductive nonin- ductive 50w 50vdc 10w 1 () () notes:1.rise time=7ns max. input lmpedance=1 megohm 22pf 2.rise time=10ns max. source lmpedance =50 ohms (adjustable) 0.4 0.6 0.8 1.0 1.2 1.4 1.8 1.6 instantaneous forwa rd curren t( amperes) instantaneous forward voltage (volts) t =25 c j pulse width=300 s 1% duty cycle 0.01 0.03 0.1 0.3 1 3 10 jinan jingheng electronics co., ltd. 2-2 t =125 c j t =150 c j http www.jingheng cn :// .
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