1. product profile 1.1 general description 220 w ldmos power transistor for base st ation applications at frequencies from 1800 mhz to 2000 mhz. [1] test signal: 3gpp test model 1; 64 dpch; par = 8.4 db at 0.01 % probability on ccdf; carrier spacing 5 mhz. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low r th providing excellent thermal stability ? designed for broadband operation ? lower output capacitance for improved performance in doherty applications ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifiers for w-cdma base statio ns and multi carrier applications in the 1800 mhz to 2000 mhz frequency range BLF8G20LS-220 power ldmos transistor rev. 2 ? 30 may 2013 product data sheet table 1. typical performance typical rf performance at t case = 25 ? c in a common source class-ab production test circuit. test signal f i dq v ds p l(av) g p ? d acpr (mhz) (ma) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 1805 to 1880 1600 28 55 18.9 34 ? 31 [1]
BLF8G20LS-220 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 30 may 2013 2 of 12 nxp semiconductors BLF8G20LS-220 power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability. 5. thermal characteristics table 2. pinning pin description simplified outline graphic symbol 1drain 2gate 3source [1] 3 2 1 sym112 1 3 2 table 3. ordering information type number package name description version BLF8G20LS-220 - earless flanged ceramic package; 2 leads sot502b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l =55w; v ds =28v; i dq = 1600 ma 0.27 k/w
BLF8G20LS-220 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 30 may 2013 3 of 12 nxp semiconductors BLF8G20LS-220 power ldmos transistor 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the BLF8G20LS-220 is capable of withstand ing a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq = 1600 ma; p l = 200 w (cw); f = 1805 mhz. 7.2 impedance information [1] z s and z l defined in figure 1 . table 6. dc characteristics t j = 25 ? c, unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =2.7ma 65 - - v v gs(th) gate-source threshold voltage v ds =10v; i d = 270 ma 1.5 1.9 2.3 v v gsq gate-source quiescent voltage v ds =28v; i d = 1.6 a 1.7 2.1 2.5 v i dss drain leakage current v gs =0v; v ds =28v - - 4.2 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v - 50.6 - a i gss gate leakage current v gs =11v; v ds = 0 v - - 420 na g fs forward transconductance v ds =10v; i d = 13.5 a - 19.6 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =9.45a -0.057- ? table 7. rf characteristics test signal: 2-carrier w-cdma; par = 8.4 db at 0.01 % probability on ccdf; 3gpp test model 1; 64 dpch; f 1 = 1807.5 mhz; f 2 = 1812.5 mhz; f 3 = 1872.5 mhz; f 4 = 1877.5 mhz; rf performance at v ds =28v; i dq =1600ma; t case =25 ? c; unless otherwise specified; in a production circuit. symbol parameter conditions min typ max unit g p power gain p l(av) = 55 w 17.8 18.9 - db ? d drain efficiency p l(av) = 55 w 29 34 - % rl in input return loss p l(av) =55w - ? 15.5 ? 7db acpr adjacent channel power ratio p l(av) =55w - ? 31 ? 26 dbc table 8. typical impedance measured load-pull data; i dq = 1600 ma; v ds = 28 v. f z s [1] z l [1] (mhz) (? ) (? ) 1805 1.38 ? j3.45 0.90 ? j2.50 1843 1.43 ? j3.63 0.82 ? j2.37 1880 1.38 ? j3.56 0.90 ? j2.60
BLF8G20LS-220 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 2 ? 30 may 2013 4 of 12 nxp semiconductors BLF8G20LS-220 power ldmos transistor 7.3 test circuit [1] american technical ce ramics type 100b or capacitor of same quality. [2] tdk or capacitor of same quality. [3] murata or capacitor of same quality. fig 1. definition of transistor impedance 001aaf059 drain z l z s gate see table 9 for list of components. fig 2. component layout table 9. list of components see figure 2 for component layout. the used pcb material is rogers ro4350b with a thickness of 0.76 mm. component description value remarks c1, c2, c3, c4, c5, c6 multilayer ceramic chip capacitor 33 pf [1] atc100b c7, c8, c9, c10 multilayer ceramic chip capacitor 1 ? f [2] tdk c11, c12, c13, c14 multilayer ceramic chip capacitor 10 ? f [3] murata c15, c16 multilayer cera mic chip capacitor 470 ? f, 6 3 v r1 chip resistor 9.1 ? smd 0805 % / ) * / 6 b , 1 3 8 7 3 & |